VRRM = 2500 V
IF = 2000 A
ABB StakPak H Series
Press-pack Diode
5SKF 20H2500
Doc. No. 5SYB 0117-02 Ma
y
. 04
High SOA
High tolerance to uneven
mounting pressure
Suitable for series connection
Explosion resistant package
Modular design concept,
available for a wide range of
current ratings
Maximum Rated Values1)
Parameter2) Symbol Conditions min max Unit
Collector-emitter voltage VRRM 2500 V
DC forward current IF T
c = 75 °C 2000 A
Repetitive peak forward
current IFM 4000 A
Surge current IFSM VR = 0 V, tp = 10 ms, Tvj = 125 °C,
half-sinewave 23 kA
Junction temperature Tvj 5 125 °C
Storage temperature Tstg -40 70 °C
Mounting force 2) F
M 30 70 kN
1)Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747-9
2)For detailed mounting instructions refer to ABB document no. 5SYA 2037-02
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SKF 20H2500
Diode Characteristic Values3)
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse
current IRRM V
R = VRRM T
vj = 125°C 54 mA
Tvj = 25°C 1.95 2.20 V
Forward voltage VF I
F = 2000 A Tvj = 125°C 1.90 2.20 V
Peak forward recovery
voltage VFR dI/dt = 3000 A/µs Tvj = 125°C 60 V
Tvj = 25°C 1100 A
Reverse recovery current Irr Tvj = 125°C 1600 A
Tvj = 25°C 1000 µC
Reverse recovery charge Qrr Tvj = 125°C 1900 µC
Tvj = 25°C 1.7 µs
Reverse recovery time trr Tvj = 125°C 1.8 µs
Tvj = 25°C 0.9 J
Reverse recovery energy Erec
VCC = 1250 V,
IF = 2000 A,
dI/dt = 3000 A/µs,
Lσ = 200 nH
inductive load
Tvj = 125°C 1.7 J
3)Characteristic values according to IEC 60747-2
Thermal Properties
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) 11 K/kW
Thermal resistance case to
heatsink Rth(c-h) 2 K/kW
Operating junction
temperature Tvjop
Heatsink flatness :
Complete module area < 100 µm
Each submodule area < 50 µm
Roughness : < 6.3 µm 5 125 °C
Mechanical Properties
Parameter Symbol Conditions min typ max Unit
Dimensions L* W* H Typical , see outline drawing 236*150*26 mm
Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm
Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm
Weight 1.7 kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04 page 2 of 5
5SKF 20H2500
Electrical configuration
Aux. Anode
Cathode Anode
Outline drawing
StakPak H2
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04 page 3 of 5
5SKF 20H2500
1.0 1.5 2.0 2.5
VF [V]
0
1000
2000
3000
4000
IF [A]
25 °C
125 °C
VFR [V]
Fig. 1 Typical diode on-state characteristics Fig. 2 Typical forward recovery voltage
versus di/dt
0 800 1600 2400 3200 4000
IF [A]
0
500
1000
1500
2000
2500
3000
Irr, Qrr [A, µC]
VCC = 1250 V
diF/dt = 3000 A/µs
Tvj = 125°C
Irr
Qrr
Erec
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Erec [J]
1000 1500 2000 2500 3000 3500
diF/dt [A/µs]
0
500
1000
1500
2000
2500
Irr, Qrr [A, µC]
VCC = 1250 V
IF = 2000 A
Tvj = 125°C
Irr
Qrr
Erec
0.0
0.4
0.8
1.2
1.6
2.0
Erec [J]
Fig. 3 Typical diode reverse recovery
characteristics versus forward current
Fig. 4 Typical diode reverse recovery
characteristics versus dI/dt
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04 page 4 of 5
ABB Semiconductors AG 5SKF 20H2500
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYB 0117-02 May. 04
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ic)-(jth i
=
τ
i 1 2 3 4
Ri(K/kW) 4.568 4.615 0.944 0.803
τi(ms) 580.8 53.11 3.286 0.609
10-3 10-2 10-1 100101
2 3 4 5 6789 2 3 4 5 6789 2 3 4 5 6789 2 3 4 5 6789
t [s]
100
101
2
3
4
5
6
7
8
9
2
3
4
5
6
7
8
9
2
ZthIC [K/kW]
Fm = 30...70 kN
Double Side Cooling
Fig.4 Maximum thermal impedance of the
diode versus time
Environmental class according to IEC 60721
Mode Class Document - no.
Storage IE 11 5 SZK 9101-01
Transportation IE 23 5 SZK 9102-01
Operation IE 33 5 SZK 9103-01
Internet www.abb.com/semiconductors