5SKF 20H2500
Diode Characteristic Values3)
Parameter Symbol Conditions min typ max Unit
Repetitive peak reverse
current IRRM V
R = VRRM T
vj = 125°C 54 mA
Tvj = 25°C 1.95 2.20 V
Forward voltage VF I
F = 2000 A Tvj = 125°C 1.90 2.20 V
Peak forward recovery
voltage VFR dI/dt = 3000 A/µs Tvj = 125°C 60 V
Tvj = 25°C 1100 A
Reverse recovery current Irr Tvj = 125°C 1600 A
Tvj = 25°C 1000 µC
Reverse recovery charge Qrr Tvj = 125°C 1900 µC
Tvj = 25°C 1.7 µs
Reverse recovery time trr Tvj = 125°C 1.8 µs
Tvj = 25°C 0.9 J
Reverse recovery energy Erec
VCC = 1250 V,
IF = 2000 A,
dI/dt = 3000 A/µs,
Lσ = 200 nH
inductive load
Tvj = 125°C 1.7 J
3)Characteristic values according to IEC 60747-2
Thermal Properties
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) 11 K/kW
Thermal resistance case to
heatsink Rth(c-h) 2 K/kW
Operating junction
temperature Tvjop
Heatsink flatness :
Complete module area < 100 µm
Each submodule area < 50 µm
Roughness : < 6.3 µm 5 125 °C
Mechanical Properties
Parameter Symbol Conditions min typ max Unit
Dimensions L* W* H Typical , see outline drawing 236*150*26 mm
Clearance distance DC acc. IEC 60664-1 and EN50124-1 10 mm
Surface creepage distance DSC acc. IEC 60664-1 and EN50124-1 23 mm
Weight 1.7 kg
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYB 0117-02 May. 04 page 2 of 5