EF LM6472-4C FUJITSU Internally Matched Power GaAs FETs FEATURES * High Output Power: Pj gp = 36dBm (Typ.) * High Gain: Gj gp = 8.0dB (Typ.) * High PAE: nad = 30% (Typ.) * Broad Band: 6.4 ~7.2GHz * Impedance Matched Zin/Zout = 50 * Hermetically Sealed Package DESCRIPTION The FLM6472-4C is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsus stringent Quality Assurance Program assures the highest relia- bility and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Drain-Source Voltage Vps 15 Vv Gate-Source Voltage VGs 5 V Total Power Dissipation PT Te = 25C 25 W Storage Temperature Tstg -65 to +175 C Channel Temperature | Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vpg) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8 and -2.2 mA respectively with gate resistance of 100. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Test Conditions Unit Saturated Drain Current IDss Vos = 5V, Vas = 0V - 1800 | 2700 mA Transconductance gm Vps =5V, Ips =1100mA | - 1000] - ms Pinch-olf Voltage Vp Vos = 5V, Ips =90mA -1.0 | -2.0 | -3.5 Vv IGS = -90uA -5 - - Output Power at 1dB G.C.P. PidB 35 36 - dBm . Vps = 10V Power Gain at 1dB G.C.P. | GidB IDs ~ 0.6 IDss (Typ), 7.0 | 8.0 dB f =6.4 ~ 7.2 GHz, Drain Current Idsr_ | Zg =Z, =50 ohm - | 1100] 1300 mA Power-added Efficiency add - 30 - % Thermal Resistance | Rth Channel to Case - 5 6 C/W CASE STYLE: IB G.C.P.: Gain Compression Point 1998 Microwave Databook 392 Data Sheetsani SU FLM6472-4C Internally Matched Power GaAs FETs Total Power Dissipation (W) POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 30 24 . _ 2000 \ < \ E 18 5 1500 8 12 N - 1000 & a 6 N 500 1.5 \ lb ov 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER Vps=10V Vps=10V =e _ P1dB ~ f = 6.8 GHz co oS Pin=30dBm & 38 == = 36 a = Bm g Pout 3 en g * 4 a Ss 2 pat 5 = 2 32 7 7 Treas 30 3 = 6 30 an 15 = 64 66 6.8 7.0 7.2 20 22 24 26 28 30 Frequency (GHz) Input Power (dBm) Data Sheets 393 1998 Microwave DatabookOV TPO ee Internally Matched Power GaAs FETs F UE +60 +90" oo S11 $821 sron- S49 \ 6.3 SCALE FOR |S, 1 \ ten 19-2 |o.1_| 62H 6.4 7.40 7.30 ne 9g 72 264 . oe. 6 --o-- Sp | SCALE FOR |Syo| S-PARAMETERS Vps = 10V, Ipg = 1100mA FREQUENCY S11 S21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ~ ANG MAG ~~ ANG 6200 .29 -177 3.47 29 .06 8 71 -62 6300 .26 158 3.52 15 .06 -23 .68 -73 6400 25 134 3.65 3 07 -39 .66 -84 6500 24 114 3.63 -12 07 -b4 .62 -95 6600 22 96 3.67 -26 .08 -66 58 -106 6700 .20 77 3.70 -40 .08 -79 55 -119 6800 14 59 3.67 -b4 .08 -91 52 -133 6900 .09 38 3.68 -67 .09 -103 .50 -146 7000 04 8 3.67 -83 .09 -117 46 -160 7100 .06 -126 3.60 -100 .09 -132 46 -175 7200 15 -156 3.49 -116 10 -143 45 166 7300 25 -175 3.23 -132 .09 -157 46 148 7400 37 167 3.03 -146 .09 -169 45 131 1998 Microwave Databook 394 Data SheetsOPT G CO AUN Internally Matched Power GaAs FETs Case Style "IB" Metal-Ceramic Hermetic Package ro 2.0 Min. (0.079) ; o| 8|a = L a 12.90.2 (0.508) 2-R1.620.15 (0.063) <i. < Ee , | 06 de LJ 2620.15 0.024) s|2 0.102) ale oO 10.7 0.421 0.427) | 12.0 ! (0.422) 1 als ae 0.422 17.0+0.15 IS 1: Gate (0.669) 2: Source (Flange) a 21.0+0.15 _ 3: Drain < (0.827) > Unit: mm (Inches) 395 1998 Microwave Databook Data Sheets