APTM120DA30T1G
APTM120DA30T1G – Rev 0 December, 2007
www.microsemi.com 1
–
5
11
CR1
Q2
10
9
12
NTC
12
3
4
65
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 1200 V
Tc = 25°C 31
ID Continuous Drain Current Tc = 80°C 23
IDM Pulsed Drain current 195 A
VGS Gate - Source Voltage ±30 V
RDSon Drain - Source ON Resistance 360 mΩ
PD Maximum Power Di ssi pation Tc = 25°C 657 W
IAR Avalanch e current (repetitive and non repetitive) 25 A
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 8™ MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Boost chopper
M
OSFET Power Module
VDSS = 1200V
RDSon = 300mΩ typ @ Tj = 25°C
ID = 31A @ Tc = 25°C
APTM120DA30T1G
APTM120DA30T1G – Rev 0 December, 2007
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5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 100
IDSS Zero Gate Voltage Drain Current VDS =1200V
VGS = 0V Tj = 125°C 500 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 25A 300 360
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.5mA 3 4 5 V
IGSS Gate – Source Leakage Current VGS = ±30 V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 14560
Coss Output Capacitance 1340
Crss Reverse Transfer Capacitan ce
VGS = 0V
VDS = 25V
f = 1MHz 172 pF
Qg Total gate Charge 560
Qgs Gate – Source Charge 90
Qgd Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 25A 265
nC
Td(on) Turn-on Delay Time 100
Tr Rise Time 60
Td(off) Turn-off Delay Time 315
Tf Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 25A
RG = 2.2Ω 90
ns
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 100
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 60 A
IF = 60A 2.5 3
IF = 120A 3
VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V
Tj = 25°C 265
trr Reverse Recovery Time Tj = 125°C 350 ns
Tj = 25°C 560
Qrr Reverse Recovery Charge
IF = 60A
VR = 800V
di/dt =200A/µs Tj = 125°C 2890 nC
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.19
RthJC Junction to Case Thermal Resistance Diode 0.9
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100 °C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 80 g
APTM120DA30T1G
APTM120DA30T1G – Rev 0 December, 2007
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5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
⎥
⎦
⎤
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT11
exp
25
85/25
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
T: Thermistor temperature
RT: Thermistor value at T
APTM120DA30T1G
APTM120DA30T1G – Rev 0 December, 2007
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Low Vo l tage Outp ut Characteristi cs
T
J
=25°C
T
J
=125°C
0
20
40
60
80
0 5 10 15 20
V
DS
, Drain to Sou rce Vo l tage (V)
I
D
, Drain Current (A)
V
GS
=10V
Low V ol tag e Outp ut Characteristics
4.5V
5V
0
10
20
30
40
50
0 5 10 15 20 25 30
V
DS
, Drain to Source V ol tag e (V)
I
D
, Drain Current (A)
V
GS
=6, 7, 8 & 9V
T
J
=125°C
Normalized R
DS(on)
vs. Temperature
0
0.5
1
1.5
2
2.5
3
25 50 75 100 125 150
T
J
, Junction Tem peratur e (°C)
R
DSon
, Drain to Source ON resistance
V
GS
=10V
I
D
=25A
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
10
20
30
40
0123456
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D(on)
xR
DS(on)
MAX
250µs pulse test @ <
0.5 duty cycle
Gate Charge vs Gate to Source
V
DS
=240V
V
DS
=600V
V
DS
=960V
0
2
4
6
8
10
12
0 100 200 300 400 500 600
Gate Charge (nC)
V
GS
, Gate to Source Voltage
I
D
=25A
T
J
=25°C Ciss
Crss
Coss
10
100
1000
10000
100000
0 50 100 150 200
V
DS
, Drain to Sou rce Vo l tage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Vol tage
APTM120DA30T1G
APTM120DA30T1G – Rev 0 December, 2007
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5
Typical Diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pul se Duration (Seconds)
Thermal Impedance (°C/W )
Maximum Effective Transient Thermal Imp edance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
25
50
75
100
125
150
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VF, Anode to Cathode Voltage (V )
IF, Forward Current (A)
Forward Current vs Forward Voltage Trr vs. Curr ent Rate of Charge
30 A
60 A
120 A
0
100
200
300
400
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
trr, Reverse Recovery T ime (ns)
T
J
=125°C
V
R
=800V
QRR vs. Current Rate Charge
30 A
60 A
120 A
0
1
2
3
4
5
6
7
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
QRR, Reverse Recovery Charge (µC)
T
J
=125°C
V
R
=800V
IRRM vs. Current Rate of Charge
30 A
60 A
120 A
0
10
20
30
40
50
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
T
J
=125°C
V
R
=800V
Capacitance vs. Reverse Voltage
0
100
200
300
400
1 10 100 1000
VR, Reverse Voltage (V)
C, Capacitance (pF)
0
20
40
60
80
100
25 50 75 100 125 150 175
Case Temperature (ºC)
IF(AV) (A)
Max. Average Forward Cur rent vs. Case Temp.
Duty Cycle = 0.5
T
J
=175°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsem i's products are covered by one or more of U.S patents 4,8 95,810 5,045,903 5,089,434 5,182,234 5,019,5 22
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,2 31,474 5,434,095 5,528,0 58 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.
