Continental Device India Limited Data Sheet Page 1 of 3
BD136, 138, 140 PNP PLASTIC POWER TRANSISTORS
Complementary BD135, 137, 139
Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS 136 138 140
Collector-base voltage (open emitter) VCBO max. 45 60 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector current ICmax. 1.5 A
Total power dissipation up to T C = 25°C Ptot max. 12.5 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 0.5 A; IB = 0.05 A VCEsat max. 0.5 V
D.C. current gain
IC = 0.15 A; VCE = 2 V hFE min. 40
max. 250
RATINGS (at T A=25°C unless otherwise specified)
Limiting values 136 138 140
Collector-base voltage (open emitter) VCBO max. 45 60 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
BD136, BD138, BD140
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QS C/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
ALL DIMENSIONS IN MM
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
Continental Device India Limited Data Sheet Page 2 of 3
BD136, BD138, BD140
Collector current ICmax. 1.5 A
Base current I Bmax. 0.5 A
Total power dissipation up to T A = 25°C Ptot max. 1.25 W
Derate above 25°C max 1 0
mW/°C
Total power dissipation up to T C = 25°C Ptot max. 12.5 W
Derate above 25°C max 1 0 0
mW/
°
C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth jc 10 °
C/W
From junction to ambient Rth ja 100 °
C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 136 138 140
Collector cutoff current
IE = 0; VCB = 30 V ICBO max. 0.1 µA
IE = 0; VCB = 30 V; T C = 125°C ICBO max. 10 µA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 10 µA
Breakdown voltages
IC = 0.03 A; IB = 0 VCEO(sus)* min. 45 60 80 V
IC = 1 mA; I E = 0 VCBO min. 45 60 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 0.5 A; IB = 0.05 A VCEsat* max. 0.5 V
Base-emitter on voltage
IC = 0.5A; V CE = 2V VBE(on)* max. 1.0 V
D.C. current gain
IC = 0.005 A; VCE = 2 V* hFE* min. 25
IC = 0.15 A; VCE = 2 V** hFE* min. 40
max. 250
IC = 0.5 A; V CE = 2 V* hFE* min. 25
** hFE classification:–6 min. 40
max. 100
–10 min. 63
max. 160
–16 min. 100
max. 250
–25 min. 160
max. 400
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for
application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to
confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD
is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information.
Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it
convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support
appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated
in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be
responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com
