The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.0 Revised November 12, 2015
SiT5002
80-220 MHz MEMS TCXO and VCTCXO
Preliminary
Features Applications
Any frequency between 80.000001 and 220 MHz accurate to 6
decimal places
Ideal for telecom, networking, smart meter, GPS and wireless
applications
100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO
Frequency stability as low as ±5 ppm. Contact SiTime for tighter
stability options
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Voltage control option with pull range from ±12.5 ppm to ±50 ppm
LVCMOS/HCMOS compatible output
Voltage control, standby, output enable or no connect modes
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
Outstanding silicon reliability of 2 FIT, 10 times better than quartz
Pb-free, RoHs and REACH compliant
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 80.000001 – 220 MHz
Initial Tolerance F_init -1.5 – 1.5 ppm At 25°C after two reflows
Stability Over Temperature F_stab -5 – +5 ppm Over operating temperature range at rated nominal power
supply voltage and load. (see ordering codes on page 5)
Contact SiTime for tighter stability options.
Supply Voltage F_vdd – 0.05 – ppm ±10% Vdd (±5% for Vdd = 1.8V)
Output Load F_load – 0.1 – ppm ±10% of 15 pF load
First year Aging F_aging -2.5 – +2.5 ppm
10-year Aging -4.0 – +4.0 ppm 25°C
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Contact SiTime for any other supply voltage options.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.70 3.0 3.3 V
2.97 3.3 3.63 V
Pull Range PR ±12.5, ±25, ±50 ppm
Upper Control Voltage VC_U Vdd-0.1 – – V All Vdds. Voltage at which maximum deviation is guaranteed.
Control Voltage Range VC_L – – 0.1 V
Control Voltage Input Impedance Z_vc 100 – – k
Frequency Change Polarity – Positive slope –
Control Voltage -3dB Bandwidth V_BW – – 8 kHz
Current Consumption Idd – 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V.
– 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V.
OE Disable Current I_OD – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
– – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current I_std – – 70 µA Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down.
– – 10 µA Vdd = 1.8V. ST = GND, output is Weakly Pulled Down.
Duty Cycle DC 45 – 55 % All Vdds
LVCMOS Rise/Fall Time Tr, Tf – 1.5 2 ns LVCMOS option. Default rise/fall time, All Vdds, 10% - 90%
Vdd.
Output Voltage High VOH 90% – – Vdd OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V)
IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V)
IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V)
Output Voltage Low VOL – – 10% Vdd
Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in – 100 250 k
The Smart Timing Choice
The Smart Timing Choice
SiT5002
80-220 MHz MEMS TCXO and VCTCXO
Rev. 1.0 Page 2 of 6 www.sitime.com
Environmental Compliance
Pin Configuration
Pin Symbol Functionality
1VC/OE/ST
/NC
V control Voltage control
Output
Enable
H or Open[2]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H or Open[2]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
NC No connect (input receiver off)
2 GND Power Electrical and case ground
3 CLK Output Oscillator output
4 VDD Power Power supply voltage
Note:
2. A pull-up resistor of <10 k? between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode.
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge – 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
1 4
VC/OE/ST VDD
32
GND OUT
Note:
1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options.
Electrical Characteristics (continued)
Parameter Symbol Min. Typ. Max. Unit Condition
Startup Time T_start – – 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe – – 150 ns f = 80 MHz. For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume – 6 10 ms Measured from the time ST pin crosses 50% threshold
RMS Period Jitter T_jitt – 1.7 2 ps f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 1.7 2 ps f = 10 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds
Top View
The Smart Timing Choice
The Smart Timing Choice
SiT5002
80-220 MHz MEMS TCXO and VCTCXO
Rev. 1.0 Page 3 of 6 www.sitime.com
Timing Diagram
Phase Noise Plot
50% Vdd
Vdd ST Voltage
CLK Output
T_resume
T_resume: Time to resume from ST
90% Vdd, 2.5/2,8/3.3V devices
95% Vdd, 1.8V devices Vdd Pin 4 Voltage
CLK Output
T_start
T_start: Time to start from power-off
(ST/OE Mode) (ST Mode Only)
10
310
410
510
610
7
-160
-150
-140
-130
-120
-110
-100
-90
Frequency Offset (Hz)
Phase Noise (dBc/Hz)
Phase Noise, 100MHz carrier, 3.3V, LVCMOS output, TCXO
Integrated random phase jitter (RMS, 12kHz-20MHz): 0.51ps
The Smart Timing Choice
The Smart Timing Choice
SiT5002
80-220 MHz MEMS TCXO and VCTCXO
Rev. 1.0 Page 4 of 6 www.sitime.com
Notes:
3. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
4. A capacitor of value 0.1 F between Vdd and GND is recommended.
Dimensions and Patterns
Package Size – Dimensions (Unit: mm) [3] Recommended Land Pattern (Unit: mm) [4]
2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint)
3.2 x 2.5 x 0.75 mm
5.0 x 3.2 x 0.75 mm
7.0 x 5.0 x 0.90 mm
YXXXX
3.2 ± 0.05
2.5 ± 0.05
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.2
1.9
1.4
1.2
5.0 ± 0.05
3.2 ± 0.05
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
5.0 ± 0.05
1.4
1.1
5.08
7.0 ± 0.05
2.6
0.90 ± 0.10
YXXXX
5.08
3.81
2.2
2.0
The Smart Timing Choice
The Smart Timing Choice
SiT5002
80-220 MHz MEMS TCXO and VCTCXO
Rev. 1.0 Page 5 of 6 www.sitime.com
Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number
Generator.
Notes:
5. SiTime’s SoftEdge™ output waveform with 6 ns rise/fall time reduces EMI and is similar to clipped sine wave in functionality.
6. Contact SiTime for tighter stability options.
SiT5002AC -2E-18VQ-155.520000T
Part Family
SiT5002
Revision Letter
“A” is the revision
Temperature Range
Output Waveform
“-“ Default[5]
“C” Commercial, -20 to 70ºC
“I” Industrial, -40 to 85ºC
Frequency Stability[6]
“E” for ±5 ppm
Package Size
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
Frequency
80.000001 to 220.000000 MHz
Supply Voltage
“18” for 1.8 V ±5%
“25” for 2.5 V ±10%
“28” for 2.8 V ±10%
“30” for 3.0 V ±10%
“33” for 3.3 V ±10%
Packaging
Blank for Bulk
Pull Range Options
“Q” for ±12.5 ppm
“M” for ±25 ppm
“B” for ±50 ppm
“T”: Tape & Reel, 3K reel
“Y”: Tape & Reel, 1K reel
Feature Pin (pin 1)
“V” for Voltage Control
“E” for Output Enable
“S” for Standby
“N” for No Connect
“0” for fixed frequency
(Pin1 = “E”, “S” or “N” options)
(Pin1 = “V” option only)
“G” 2.5 x 2.0 mm
Rev. 1.0 Page 6 of 6 www.sitime.com
© SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
The Smart Timing Choice
The Smart Timing Choice
80-220 MHz MEMS TCXO and VCTCXO
SiT5002
Additional Information
Document Description Download Link
Manufacturing
Notes
Tape & Reel dimension, reflow
profile and other manufacturing
related info
http://www.sitime.com/component/docman/doc_download/85-manufacturing-notes-for-sitime-oscillators
Qualification
Reports
RoHS report, reliability reports,
composition reports
http://www.sitime.com/support/quality-and-reliability
Performance
Reports
Additional performance data
such as phase noise, current
consumption and jitter for
selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination
Techniques
Termination design
recommendations
http://www.sitime.com/support/application-notes
Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes
Revision History
Version Release Date Change Summary
1.0 11/12/15 Final production release
• Revised initial tolerance, stability over temperature and first/10 year aging values in the electrical
characteristics table
• Revised frequency stability option
The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Silicon MEMS Outperforms Quartz Rev. 1.2 Revised November 13, 2015
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.2 www.sitime.com
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal™ process, which eliminates foreign par-
ticles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced EpiSeal process, which eliminates foreign parti-
cles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• Best analog CMOS design expertise
Figure 4. Power Supply Noise Rejection[4]
28
38
1,140
Epson
IDT
SiTime
Reliability (Million Hours)
1.5
3.5
3.0
8.0
0
2
4
6
8
10
1-Year 10-Year
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
Aging (±PPM)
SiTime
2X Better
- 39 - 40 - 42 - 43 - 45
- 73
- 90
- 80
- 70
- 60
- 50
- 40
- 30
Kyocera Epson TXC CW SiLabs SiTime
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Average Spurs (dB)
SiTime
54X Better
0.0
1.0
2.0
3.0
4.0
5.0
10 100 1,000 10,000
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Power Supply Noise Frequency (kHz)
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
SiTime
SiTime
3X Better
The Smart Timing Choice
The Smart Timing Choice
Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.2 www.sitime.com
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Figure 6. Shock Robustness[6]
Vibration Sensitivity (ppb/g)
0.10
1.00
10.00
100.00
10 100 1000
Vibration Frequency (Hz)
Vibration Sensitivity vs. Frequency
SiTime TXC Epson Connor Winfield Kyocera SiLabs
SiTime
Up to 30x
Better
14.3
12.6
3.9
2.9 2.5
0.6
0
2
4
6
8
10
12
14
16
K
y
ocer
a
E
p
son TXC CW SiLab
s
SiTime
Differential XO Shock Robustness - 500 g
SiTime
Up to 25x
Better
Peak Frequency Deviation (PPM)
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
The Smart Timing Choice
The Smart Timing Choice
Document Feedback Form
Feedback Form Rev. 1.0 www.sitime.com
SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form
below to productsupport@sitime.com.
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EMI Termination recommendations Shock and vibration performance Other
If “Other,” please specify:
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SIT5002AI-8C-33N0-100.000000 SIT5002AI-8C-33N0-100.000000X SiT5002AI-2E-33VQ-205.000000X SiT5002AC-
3E-18E0-125.000000X SiT5002AI-2E-33VQ-205.000000 SiT5021AC-2DE-33E-81.920000Y SiT5021AI-2BE-
33VQ200.000000Y SiT5021AC-2CE-25VB148.351648Y SiT5022AI-1BE-33S-290.000000Y SiT5021AC-2BE-33N-
192.000000Y SiT5021AC-2CE-33E-200.000000Y SiT5021AI-2CE-25N-50.000000Y SiT5021AI-2DE-25N-196.608000Y
SiT5021AI-2DE-33VM100.000000Y SiT5021AI-2DE-33N-156.250000Y SiT5021AC-2BE-33VB146.550000Y
SiT5021AC-1DE-25E-125.000000X SiT5021AI-1BE-33E-50.000000Y SiT5021AC-2BE-33N-171.000000Y SiT5021AI-
2DE-33VM125.000000Y SiT5022AI-1DE-33S-625.000000Y SiT5021AC-2CE-25VB148.500000Y SiT5021AI-2DE-33E-
100.000000Y SiT5021AC-1DE-25E-125.000000Y SiT5021AC-1BE-33VQ153.600000Y SiT5021AI-2DE-
33VM148.500000Y SiT5021AC-2DE-33N-155.520000Y SiT5021AC-2DE-33E-81.920000X SiT5021AI-2DE-
33VM156.250000Y SiT5022AI-2BE-25E-625.000000Y