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©2006 Fairchild Semiconduct or Corporation 1 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
January 2014
FSAM50SM60A
Motion SPM® 2 Series
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 50 A 3-Phase IGBT Inverter w ith Integral
Gate Drivers and Protection
• Low-Loss, Short-Circuit Rated IGBTs
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Separate Open-Emitter Pins from Low Side IGBTs
for Three-Phase Current Sensing
• Single-Grounded Power Supply
• Optimized for 5 kHz Switching Frequency
• Built-in NTC Thermistor for Temperature
Monitoring
• Inverter Power Rating of 4.0 kW / 100~253 VAC
• Adjustable Current Protection Level via Selection
of Sense-IGBT Emitter's External Rs
• Isolation Rating: 2500 Vrms / min.
Applications
• Motion Control - Home Appliance / Industrial Motor
Resource
• AN-9043 - Motion SPM® 2 Serie s User's Guide
General Description
FSAM50SM60A is a Motion SPM® 2 module
providing a fully-featured, high-performance inverter
stage for AC Induction, BLDC, and PMSM motors.
These modules integrate optimized gate drive of
the built-in IGBTs to minimize EMI and losses, while
also providing multiple on-module protection
features including under-voltage lockouts, over-
current shutdown, thermal monitoring, and fault
reporting. The built-in, high-speed HVIC requires
only a single supply voltage and translates the
incoming logic-level gate inputs to the high-voltage,
high-current drive signals required to properly drive
the module's internal IGBTs. Separate negative
IGBT terminals are available for each phase to
support the widest variety of control algo rithms.
Package Marking and Ordering Information
Device Device Marking Package Packing Typ e Quantity
FSAM50SM60A FSAM50SM60A S32CA-032 Rail 8
Figure 1. Package Overview
©2006 Fairchild Semiconduct or Corporation 2 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Integrated Power Functions
• 600V - 50 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out (UVLO) Protection
Note) Available bootstrap circuit example is given in Figures 13 and 14.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out (UVLO) Protection
• Temperature Monitoring: system temperature monitoring using built-in thermistor
Note) Available temperature monitoring circuit is given in Figure 14.
• Fault signaling: corresponding to a SC fault (low-side IGBTs) and UV fault (low-side control supply)
• Input interface: active-LOW Interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
Case Temperature(TC)
Detecting Point
(26)NU
(22)VB(W)
(1)VCC(L)
(2)COM(L)
(3)IN(UL)
(4)IN(VL)
(5)IN(WL)
(7)VFO (27)NV
(28)NW
(32)P
(20)IN(WH)
(23)VS(W)
(29)U
(30)V
(31)W
(8)CFOD
(9)CSC
(25)RTH
(24)VTH
(21)VCC(WH)
(18)VB(V)
(19)VS(V)
(15)INV(H)
(17)VCC(VH)
(16)COM(H)
(13)VB(U)
(14)VS(U)
(11)IN(UH)
(12)VCC(UH)
(10)RSC
(6)COM(L)
DBC Substrate
Case Temperature(TC)
Detecting Point
(26)NU
(22)VB(W)
(1)VCC(L)
(2)COM(L)
(3)IN(UL)
(4)IN(VL)
(5)IN(WL)
(7)VFO (27)NV
(28)NW
(32)P
(20)IN(WH)
(23)VS(W)
(29)U
(30)V
(31)W
(8)CFOD
(9)CSC
(25)RTH
(24)VTH
(21)VCC(WH)
(18)VB(V)
(19)VS(V)
(15)INV(H)
(17)VCC(VH)
(16)COM(H)
(13)VB(U)
(14)VS(U)
(11)IN(UH)
(12)VCC(UH)
(10)RSC
(6)COM(L)
DBC Substrate
©2006 Fairchild Semiconduct or Corporation 3 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Pin Descriptions
Pin Number Pin Name Pin Description
1V
CC(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
2COM
(L) Low-Side Common Supply Ground
3IN
(UL) Signal Input Terminal for Low-Side U-Phase
4IN
(VL) Signal Input Terminal for Low-Side V-Phase
5IN
(WL) Signal Input Terminal for Low-Side W-Phase
6COM
(L) Low-Side Common Supply Ground
7V
FO Fault Output
8C
FOD Capacitor for Fault Output Duration Selection
9C
SC Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input
10 RSC Resistor for Short-Circuit Current Detection
11 IN(UH) Signal Input for High-Side U-Phase
12 VCC(UH) High-Side Bias Voltage for U-Phase IC
13 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving
14 VS(U) High-SideBias Voltage Ground for U-Phase IGBT Driving
15 IN(VH) Signal Input for High-Side V-Phase
16 COM(H) High-Side Common Supply Ground
17 VCC(VH) High-Side Bias Voltage for V-Phase IC
18 VB(V) High-Side Bias Voltage for V-Phase IGBT Driving
19 VS(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving
20 IN(WH) Signal Input for High-side W-Phase
21 VCC(WH) High-Side Bias Voltage for W-Phase IC
22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
23 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
24 VTH Thermistor Bias Voltage
25 RTH Series Resistor for the Use of Thermistor (Temperature Detection)
26 NUNegative DC-Link Input Terminal for U-Phase
27 NVNegative DC-Link Input Terminal for V-Phase
28 NWNegative DC-Link Input Terminal for W-Phase
29 U Output for U-Phase
30 V Output for V-Phase
31 W Output for W-Phase
32 P Positive DC-Link Input
©2006 Fairchild Semiconduct or Corporation 4 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
1st Notes:
1. Inverter low-si de is co mpose d of three se nse-IG BTs includ ing fr eewhe eling d iodes for each IGBT a nd one co ntrol IC which h as gate dri ving , current -sensi ng and
protection functions.
2. Inverter power side is composed of four inverter DC-link input pins and three inverter output pins.
3. Inverter high-side is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
COM(L)
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU (26)
NV (27)
NW (28)
U (29)
V (30)
W ( 31)
P (32)
(23) VS(W)
(22) VB(W)
(19) VS(V)
(18) VB(V)
(9) CSC
(8) CFOD
(7) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM(L)
(1) V CC(L)
(10) R SC
RTH (25)
VTH (24)
(6) COM(L)
VCC
VB
OUT
COM VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM VS
IN
(21) VCC(WH)
(20) IN(WH)
(17) VCC(VH)
(15) IN(VH)
(16) COM(H)
(14) VS(U)
(13) VB(U)
(12) VCC(UH)
(11) IN(UH)
THERMISTOR
©2006 Fairchild Semiconduct or Corporation 5 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Inverter Part
2nd Notes:
1. It would be recommended that the average junction temp erature should be limited to TJ 125C (at TC 100C) in order to guarantee safe operation.
Control Part
Total System
Thermal Resistance
2nd Notes:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
3. The thickness of thermal grease should not be more than 100 m.
Item Symbol Condition Rating Unit
Supply Voltage VDC Applied to DC-Link 450 V
Supply Voltage (Surge) VPN(Surge) Applied between P and N 500 V
Collector - Emitter Voltage VCES 600 V
Each IGBT Collector Current ± ICTC = 25°C 50 A
Each IGBT Collector Current ± ICTC = 100°C 25 A
Each IGBT Collector Current (Peak) ± ICP TC = 25°C , Under 1ms Pulse Width 100 A
Collector Dissipation PCTC = 25°C per Chip 100 W
Operating Junction Temperature TJ(2nd Note 1) -20 ~ 125 °C
Item Symbol Condition Rating Unit
Control Supply Voltage VCC Applied between VCC(UH), VCC(VH), VCC(WH) -
COM(H), VCC(L) - COM(L)
20 V
High-Side Control Bias V olt age VBS Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) -
VS(W)
20 V
Input Signal Voltage VIN Applied between IN(UH), IN(VH), IN(WH) - COM(H)
IN(UL), IN(VL), IN(WL) - COM(L)
-0.3 ~ VCC+0.3 V
Fault Output Supply Voltage VFO Applied between VFO - COM(L) -0.3 ~ VCC+0.3 V
Fault Output Current IFO Sink Current at VFO Pin 5 mA
Current-Sensing Input Voltage VSC Applied between CSC - COM(L) -0.3 ~ VCC+0.3 V
Item Symbol Condition Rating Unit
Self-Protection Supply Voltage Limit
(Short-Circuit Protection Capability) VPN(PROT) Applied to DC-Link,
VCC = VBS = 13.5 ~ 16.5 V
TJ = 125°C, Non-Repetitive, < 5 s
400 V
Module Case Operation Temperature TCSee Figure 2 -20 ~ 100 °C
Storage Temperature TSTG -20 ~ 125 °C
Isolation Voltage VISO 60Hz, Sinusoidal, AC 1 Minute, Connect
Pins to Heat Sink Plate 2500 Vrms
Item Symbol Condition Min. Typ. Max. Unit
Junction to Case Thermal
Resistance Rth(j-c)Q Inverter IGBT Part (per 1/6 module) - - 1.00 °C/W
Rth(j-c)F Inverter FWDi Part (per 1/6 module) - - 1.50 °C/W
Contact Thermal
Resistance Rth(c-f) DBC Substrate (per 1 Module)
Thermal Grease Applied (2nd Note 3) - - 0.06 °C/W
©2006 Fairchild Semiconduct or Corporation 6 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Electrical Characteristics
Inverter Part (TJ = 25°C, unless otherwise specified.)
2nd Notes:
4. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Item Symbol Condition Min. Typ. Max. Unit
Collector - emitter
Saturation Voltage VCE(SAT) VCC = VBS = 15 V
VIN = 0 V IC = 50 A, TJ = 25°C - - 2.4 V
FWDi Forward Voltage VFM VIN = 5 V IC = 50 A, TJ = 25°C - - 2.1 V
Switching Times tON VPN = 300 V, VCC = VBS = 15 V
IC = 50 A, TJ = 25°C
VIN = 5 V 0 V, Inductive Load
(High- And Low-Side)
(2nd Note 4)
-0.69-s
tC(ON) -0.32-s
tOFF -1.32-s
tC(OFF) -0.46-s
trr -0.10-s
Collector-Emitter
Leakage Current ICES VCE = VCES, TJ = 25°C - - 250 A
t
rr
I
C
V
CE
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
90% I
C
10% V
CE
100% I
C
(a) Turn-on
t
rr
I
C
V
CE
V
IN
t
ON
t
C(ON)
V
IN(ON)
10% I
C
90% I
C
10% V
CE
100% I
C
(a) Turn-on (b) Turn-off
ICVCE
VIN
tOFF tC(OFF)
10% VCE 10% IC
VIN(OFF)
(b) Turn-off
ICVCE
VIN
tOFF tC(OFF)
10% VCE 10% IC
VIN(OFF)
©2006 Fairchild Semiconduct or Corporation 7 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Control Part
2nd Notes:
5. Short-circuit protection is functioning only at the low-sides. It would be recommended that the value of the external sensing resistor (RSC) should be selected
around 4 0 in order to make the SC trip-level of about 75A at the shunt resistors (RSU, RSV, RSW) of 0. For the detaile d information a bout the relationshi p
between the external sensing resistor (RSC) and the shunt resistors (RSU, RSV, RSW), please see Figure 6 .
6. The fault-out pulse wi dth tFOD depends on the capacitance value of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F]
7. TTH is the temperature of thermistor itself. To know case temperature (TC), please make the experiment considering your application.
Figure 5. R-T Curve of The Built-in Thermistor
Item Symbol Condition Min. Typ. Max. Unit
Quiescent VCC Supply Cur-
rent IQCCL VCC = 15 V
IN(UL, VL, WL) = 5V VCC(L) - COM(L) --26mA
IQCCH VCC = 15 V
IN(UH, VH, WH) = 5V VCC(UH), VCC(VH), VCC(WH) -
COM(H)
- - 130 A
Quiescent VBS Supply Cur-
rent IQBS VBS = 15 V
IN(UH, VH, WH) = 5V VB(U) - VS(U), VB(V) -VS(V),
VB(W) - VS(W)
- - 420 A
Fault Output Voltage VFOH VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 1.1 V
Short-Circuit Trip Level VSC(ref) VCC = 15 V (2nd Note 5) 0.45 0.51 0.56 V
Sensing Voltage
of IGBT Current VSEN RSC = 40 , RSU = RSV = RSW = 0 and IC = 75 A
(See a Figure 6) 0.45 0.51 0.56 V
Supply Circuit Under-
Voltage Protection UVCCD Detection Level 11.5 12.0 12.5 V
UVCCR Reset Level 12.0 12.5 13.0 V
UVBSD Detection Level 7.3 9.0 10.8 V
UVBSR Reset Level 8.6 10.3 12.0 V
Fault Output Pulse Width tFOD CFOD = 33 nF (2nd Note 6) 1.4 1.8 2.0 ms
ON Threshold Voltage VIN(ON) High-Side Applied between IN(UH),
IN(VH), IN(WH) - COM(H)
--0.8V
OFF Threshold Voltage VIN(OFF) 3.0 - - V
ON Threshold Voltage VIN(ON) Low-Side Applied between IN(UL),
IN(VL), IN(WL) - COM(L)
--0.8V
OFF Threshold Voltage VIN(OFF) 3.0 - - V
Resistance of Thermistor RTH @ TTH = 25°C (2nd Note 7, Figure 5) - 50 - k
@ TTH = 100°C (2nd Note 7, Figure 5) - 3.0 - k
20 30 40 50 60 70 80 90 100 110 120
0
10k
20k
30k
40k
50k
60k
70k R-T Curve
Resistance[]
Temperature TTH[]℃
©2006 Fairchild Semiconduct or Corporation 8 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Figure 6. RSC Variation by Change of Shunt Resistors ( RSU, RSV, RSW) for Short-Circuit Protection
(1) @ Current Trip Level ≒ 50 A
(2) @ Current Trip Level ≒ 75 A
Recommended Operating Conditions
2nd Notes:
8. Motion SPM® 2 product might not make response if the PWIN(OFF) is less than the recommended minimum value.
Item Symbol Condition Min. Typ. Max. Unit
Supply Voltage VPN Applied between P - NU, NV, NW- 300 400 V
Control Supply Voltage VCC Applied between VCC(UH), VCC(VH), VCC(WH) -
COM(H), VCC(L) - COM(L)
13.5 15.0 16.5 V
High-side Bias Voltage VBS Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
13.0 15.0 18.5 V
Blanking Time for Preventing
Arm-short tdead For Each Input Signal 3.5 - - s
PWM Input Signal fPWM TC 100°C, TJ 125°C - 5 - kHz
Minimum Input Pulse Width PWIN(OFF) 200 VPN 400 V, 13.5 VCC 16.5 V,
13.0 VBS 18.5 V, IC 100 A,
-20 TJ 125°C
VIN = 5 V 0 V, Inductive Load (2nd Note 8)
3--s
Input ON Threshold Voltage VIN(ON) Applied between IN(UH), IN(VH), IN(WH) -
COM(H), IN(UL), IN(VL), IN(WL) - COM(L)
0 ~ 0.65 V
Input OFF Threshold Voltage VIN(OFF) Applied between IN(UH), IN(VH), IN(WH) -
COM(H), IN(UL), IN(VL), IN(WL) - COM(L)
4 ~ 5.5 V
0.000 0.005 0.010 0.015 0.020 0.025 0.030
0
20
40
60
80
(2)
(1)
Rsu,Rsv,Rsw []
Rsc []
©2006 Fairchild Semiconduct or Corporation 9 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Mechanical Characteristics and Ratings
Figure 7. Flatness Measurement Position of The DBC Substrate
2nd Notes:
9. Do not make over torque or mounting screws. Much mounting torque may cause DBC substrate cracks and bolts and Al heat-sink destruction.
10.Avoid one side tightenin g st ress. Fig ure 8 sh ows t he recommen ded torque order for mounting screws. Uneven mounting can cause the Mo tion SP M® 2 package
DBC substrate to be damaged.
Figure 8. Mounting Screws Torque Order (1 2)
Item Condition Min. Typ. Max. Units
Mounting Torq ue Mounting Screw: M4
(2nd Note 9 and 10) Recommended 10 kg•cm 8 10 12 kg•cm
Recommended 0.98 N•m 0.78 0.98 1.17 N•m
DBC Flatness See Figure 7 0 - +120 m
Weight -32-g
1
2
1
2
©2006 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Time Charts of Protective Function
P1 : Normal operation: IGBT ON and conducting current .
P2 : Under-voltage detection.
P3 : IGBT gate interrupt.
P4 : Fault signal generation.
P5 : Under-voltage reset.
P6 : Normal operation: IGBT ON and conducting current.
Figure 9. Under-Voltag e Protection (Low-Side)
P1 : Normal operation: IGBT ON and conducting current.
P2 : Under-voltage detection.
P3 : IGBT gate interrupt.
P4 : No fault signal.
P5 : Under-voltage reset.
P6 : Normal operation: IGBT ON and conducting current.
Figure 10. Under-Vo lta ge Protection (High-Side)
Internal IGBT
Gate-Emitter Voltage
Input Signal
Output Current
Fault Output Signal
Control Supply Voltage
P1
P2
P3
P4
P6
P5
UV
detect
UV
reset
Internal IGBT
Gate-Emitter Voltage
Input Signal
Output Current
Fault Output Signal
Control Supply Voltage
V
BS
P1
P2
P3
P4
P6
P5
UV
detect
UV
reset
©2006 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
P1 : Normal operation: IGBT ON and conducting current.
P2 : Short-circuit current detection.
P3 : IGBT gate interrupt / fault signal generation.
P4 : IGBT is slowly turned off.
P5 : IGBT OFF signal.
P6 : IGBT ON signal: but IGBT cannot be turned on during the fault-output activation.
P7 : IGBT OFF state.
P8 : Fault-output reset and normal operation start.
Figure 11. Short-Circuit Protection (Low -Sid e Operati on Only)
Figure 12. Recommended MCU I/O Interface Circuit
3rd Notes:
1. It would be recommended that by-pass capacitors for the gating input signals, IN(UL), IN(VL), IN(WL), IN(UH), IN(VH) and IN(WH) should be placed on the Motion
SPM® 2 product pins and on the both sides of MCU and Motion SPM 2 Product for the fault output signal, VFO, as close as possible.
2. The logic input works w ith standard CMOS or LSTTL outputs.
3. RPLCPL/RPHCPH/RPFCPF coupling at each Motion SPM 2 product input is recommended in order to prevent input/output signals’ oscillation and it should be as
close as possible to each of Motion SPM 2 Product pins.
Internal IGBT
Gate-Emitter Voltage
Input Signal
Output Current
Sensing Voltage
Fault Output Signal
P1
P2
P3
P4
P6
P5
P7
P8
SC Reference
Voltage (0.5V)
RC Filter Delay
SC Detection
MCU
COM
5 V
1.2 nF0.47 nF1 nF
4.7 k
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
100
1 nF
SPM
2 k
RPF=R
PL=R
PH=
CPF=C
PL=C
PH=
100
100
4.7 k
©2006 Fairchild Semiconductor Corporation 12 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Figure 13. Recommended Bootstrap Operation Circuit and Parameters
3rd Notes:
4. It would be recommended that the bootstrap diode, DBS, has soft and fast recovery characteristics.
5. The bootstr ap re sistor( RBS) should be three times greater than RE(H). The recommended value of RE(H) is 5. 6, but it can be increased up to 20Ωfor a slower dv/
dt of high-side.
6. The cer amic capacitor pl aced between VCC - COM should be over 1 F and mounted as close to the pins of the Motion SPM® 2 product as possible .
15 V
47 µF
0.1 µF
470 µF1 µF
One-Leg Diagram of
Moti on S PM®2 Product
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
OUT
Inv erte r
Output
P
N
These values depend on PW M control algorithm
DBS
RE(H)
RBS
©2006 Fairchild Semiconductor Corporation 13 www.fairchildsemi.com
FSAM50SM60A Rev. C4
FSAM50SM60A Motion SPM® 2 Series
Figure 14. Application Circuit
4th Notes:
1. RPLCPL/RPHCPH /RPFCPF coupling a t each Mo tion SP M® 2 product input is recommended in order to prevent input signals’ oscillation and it should be as close as
possible to each Motion SPM 2 product input pin.
2. By virtue of integrat ing an ap plicatio n specific type HVIC inside the Motion SP M 2 product, direct co upling to M CU termina ls without any o ptocoupler or transformer
isolation is possible.
3. VFO output is open-collector type. This signal line should be pulled up to the positive side of the 5 V power supply with approximately 4.7 k resistance. Please
refer to Figure 12.
4. CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.
5. VFO output pulse width shou ld be determined by connecting an externa l capacitor(CFOD) bet ween CFOD(pin 8) and COM(L)(pin 2). (Example : if CFOD = 33 nF, then
tFO = 1.8 ms (typ.)) Please refer to the 2nd note 6 for calculation method.
6. Each input signal line should be pulled up to the 5 V power supply with approximately 4.7 k (at high side input) or 2 kat low side inpu t) resistance (other RC
coupling circuits at each input m ay be needed depending on the PWM control scheme used and on the wiring impedance of the system’s printed circuit board).
Approximately a 0.22 ~ 2 nF by-pass capacitor should be used across each power supply conn ection terminals.
7. To prevent errors of the protection functi on, the wiring around RSC, RF and CSC should be as short as possible.
8. In the short-circuit protection circuit, please select the RFCSC time constant in the range 3 ~ 4 s.
9. Each capacitor should be mo unted as close to the pins of the Motion SPM 2 product as possible.
10. To prevent surge destruction, the wiring between the smoothing capacitor and the P & N pins should be as short as possible. The use of a high frequen cy non-
inductive capacitor of around 0.1 ~ 0.22 F between the P&N pins is recommended.
11. Relays are used at almost every systems o f electrical equipment s of home a ppliances. In these case s, there sh ould be suffici ent distance betwee n the MCU and
the relays. It is recommended that the distance be 5 cm at least.
COM(L)
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU(26)
NV(27)
NW(28)
U (29)
V (30)
W (31)
P (32)
(23) VS(W)
(22) VB(W)
(19) VS(V)
(18) VB(V)
(9) CSC
(8) CFOD
(7) VFO
(5) IN (WL)
(4) IN(VL)
(3) IN (UL)
(2) COM(L)
(1) VCC(L)
(10) RSC
VTH (24)
RTH (25)
(6) COM(L)
VCC
VB
OUT
COM VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM VS
IN
(21) VCC(WH)
(20) IN(WH)
(17) VCC(VH)
(15) IN(VH)
(16) COM(H)
(14) VS(U)
(13) VB(U)
(12) VCC(UH)
(11) IN(UH)
Fault
15 V
CBS CBSC
RBS DBS
CBS CBSC
RBS DBS
CBS CBSC
RBS DBS
CSP15 CSPC15
CFOD
5 V
RPF
CPL
CBPF
RPL
RPL
RPL
CPL
CPL
5 V
CPH
RPH
CPH
RPH
CPH
RPH
RS
RS
RS
RS
RS
RS
RS
M
Vdc
CDCS
5 V
RTH CSP05
CSPC05
THERMISTOR
Temp. Monitoring
Gating UH
Gating VH
Gating WH
Gating WH
Gating VH
Gating UH
CPF
M
C
U
RFU
RFV
RFW
RSU
RSV
RSW
CFU
CFV
CFW
W-Phase Current
V-Phase Current
U-Phase Current
RF
CSC
RSC
RCSC
RE(WH)
RE(VH)
RE(UH)
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