TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS Copyright (c) 2000, Power Innovations Limited, UK AUGUST 1999 - REVISED OCTOBER 2000 SELV TELECOMMUNICATION LINE OVERVOLTAGE PROTECTION Digital Line Signal Level Protection - ISDN - xDSL Safety Extra Low Voltage, SELV, values V(BO) V V `4015 5 15 `4020 8 20 `4040 25 40 R(B) 1 MDXXBG device symbol T Low Capacitance - 50 pF for `4040 through to 85 pF for `4015 High Current "H" Series for ITU-T K20, FCC Part 68 and GR-1089-CORE STANDARD 2/10 s GR-1089-CORE 500 8/20 s IEC 61000-4-5 400 10/160 s FCC Part 68 200 ITU-T K20/21 FCC Part 68 SD4XAA R ITSP WAVE SHAPE 10/700 s 2 T(A) Terminals T and R correspond to the alternative line designators of A and B A 100 A Functional Replacements for: 150 FUNCTIONAL DEVICE TYPE REPLACEMENT 10/560 s FCC Part 68 120 P0080Sx (February 1998 issue) TISP4015H1BJ 10/1000 s GR-1089-CORE 100 P0080Sx TISP4020H1BJ P0300Sx TISP4040H1BJ SMP100-8, SMP75-8 (See Note 1) TISP4020H1BJ NOTE 1. The TISP4020H1BJ has a higher a.c. V(BO) than SMP75-8, but has the same impulse V(BO). description These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of transformer windings and low voltage electronics. HOW TO ORDER DEVICE PACKAGE CARRIER ORDER AS TISP40xxH1 BJ (J-Bend DO-214AA/SMB) Embossed Tape Reeled TISP40xxH1BJR TISP40xxH1 BJ (J-Bend DO-214AA/SMB) Bulk Pack TISP40xxH1BJ Insert xx value corresponding to protection voltages of 15 V, 20 V and 40 V The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value. ADVANCE INFORMATION Information relates to new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. A Bourns Company 1 ADVANCE INFORMATION VDRM DEVICE SMBJ PACKAGE (TOP VIEW) TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 absolute maximum ratings, TA = 25 C (unless otherwise noted) RATING SYMBOL VALUE Repetitive peak off-state voltage `4020 UNIT 5 `4015 8 VDRM V 25 `4040 Non-repetitive peak on-state pulse current (see Notes 2 and 3) 2/10 s (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 500 8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 400 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/310 s (ITU-T K20/21, 10/700 s voltage wave shape) 200 ITSP A 150 5/320 s (FCC Part 68, 9/720 s voltage wave shape) 150 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 120 10/1000 s (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) 100 Non-repetitive peak on-state current (see Notes 2 and 3) ADVANCE INFORMATION 20 ms (50 Hz) full sine wave 55 16.7 ms (60 Hz) full sine wave 60 ITSM 0.2 s 50/60 Hz a.c. A 25 2 s 50/60 Hz a.c. 12 1000 s 50 Hz/60 Hz a.c. 2 Initial rate of rise of current (2/10 waveshape) di/dt 300 A/s Maximum junction temperature TJM 150 C Storage temperature range Tstg -65 to +150 C NOTES: 2. Initially the device must be in thermal equilibrium with TJ = 25 C. 3. The surge may be repeated after the device returns to its initial conditions. electrical characteristics for the R and T terminals, TA = 25 C PARAMETER IDRM V(BO) TEST CONDITIONS Repetitive peak off-state current Breakover voltage VD = VDRM di/dt = 0.8 A/ms dv/dt 1000 V/s, Linear voltage ramp, V(BO) MIN Impulse breakover Maximum ramp value = 500 V voltage di/dt = 20 A/s, Linear current ramp, Maximum ramp value = 10 A `4040 40 `4015 20 `4020 25 `4040 45 VD = 4 V `4015 Off-state current VD = 6 V `4020 VD = 22 V `4040 2 INFORMATION A 15 ID ADVANCE 5 20 di/dt = 0.8 A/ms IT = 5 A, di/dt = +/-30 mA/ms UNIT `4020 Breakover current Holding current MAX `4015 I(BO) IH TYP 50 V V 0.8 A 2 A mA TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 electrical characteristics for the R and T terminals, TA = 25 C (continued) PARAMETER TEST CONDITIONS f = 1 MHz, Vd = 1 V rms, VD = 0 f = 1 MHz, V d = 1 V rms, VD = 1 V Coff Off-state capacitance f = 1 MHz, V d = 1 V rms, VD = 2 V MIN TYP `4015 95 `4020 85 `4040 60 `4015 90 `4020 80 `4040 55 `4015 85 `4020 75 `4040 50 MAX UNIT pF thermal characteristics TEST CONDITIONS MIN TYP EIA/JESD51-3 PCB, IT = ITSM(1000), RJA Junction to free air thermal resistance 4-layer PCB, IT = ITSM(1000), TA = 25 C NOTE UNIT 115 TA = 25 C, (see Note 4) 265 mm x 210 mm populated line card, MAX ADVANCE INFORMATION PARAMETER C/W 52 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. ADVANCE INFORMATION 3 TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 PARAMETER MEASUREMENT INFORMATION +i Quadrant I ITSP Switching Characteristic ITSM V(BO) I(BO) IH IDRM VD VDRM -v ID ID IDRM VDRM +v IH I(BO) ADVANCE INFORMATION VD V(BO) ITSM Quadrant III ITSP Switching Characteristic -i PM4AC Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL APPLICATIONS INFORMATION transformer protection The inductance of a transformer winding reduces considerably when the magnetic core material saturates. Saturation occurs when the magnetising current through the winding inductance exceeds a certain value. It should be noted that this is a different current to the transformed current component from primary to secondary. The standard inductance-current relationship is: di E = - L ----- dt where: L = unsaturated inductance value in H di = current change in A dt = time period in s for current change di E = winding voltage in V Re-arranging this equation and working large changes to saturation gives the useful circuit relationship of: E x t = L x i A transformer winding volt-second value for saturation gives the designer an idea of circuit operation under overvoltage conditions. The volt-second value is not normally quoted, but most manufacturers should provide ADVANCE 4 INFORMATION TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 it on request. A 50 Vs winding will support rectangular voltage pulses of 50 V for 1 s, 25 V for 2 s, 1 V for 50 s and so on. Once the transformer saturates, primary to secondary coupling will be lost and the winding resistance, RW, shunts the overvoltage protector, Th1, see Figure 2. This saturated condition is a concern for long duration impulses and a.c. fault conditions because the current capability of the winding wire may be exceeded. For example, if the on-state voltage of the protector is 1 V and the winding resistance is 0.2 , the winding would bypass a current of 1/0.2 = 5 A, even through the protector was in the low voltage condition. T1 UNSATURATED Th1 T1 L Th1 RW SATURATED AI4XAO Figure 3 shows a generic protection arrangement. Resistors R1 and R2, together with the overcurrent protection, prevent excessive winding current flow under a.c. conditions. Alternatively, a split winding could be used with a single resistor connecting the windings. This resistor could be by-passed by a small capacitor to reduce signal attenuation. OVERCURRENT PROTECTION LINE AI4XAN R1 Th1 R2 T1 SIGNAL Figure 3. TRANSFORMER WINDING PROTECTION Overcurrent protection upstream from the overvoltage protector can be fuse, PTC or thick film resistor based. For very high frequency circuits, fuse inductance due to spiral wound elements may need to be evaluated. TISP(R) voltage selection Normally the working voltage value of the protector, VDRM, would be chosen to be just greater than the peak signal amplitude over the equipment temperature range. This would give the lowest possible protection voltage, V(BO). This would minimise the peak voltage applied to the transformer winding and increase the time to core saturation. In high frequency circuits there are two further considerations. Low voltage protectors have a higher capacitance than high voltage protectors. So a higher voltage protector might be chosen specifically to reduce the protector capacitive effects on the signal. Low energy short duration spikes will be clipped by the protector. This will extend the spike duration and the data loss time. A higher protector voltage will reduce the data loss time. Generally this will not be a significant factor for inter-conductor protection. However, clipping is significant for protection to ground, where there is continuous low-level a.c. common mode induction. In some cases the induced a.c. voltage can be over 10 V. Repetitive clipping at the induced a.c. peaks by the protector would cause severe data corruption. The expected a.c. voltage induced should be added to the maximum signal level for setting the protector VDRM value. ADVANCE INFORMATION 5 ADVANCE INFORMATION Figure 2. TRANSFORMER SATURATION TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 MECHANICAL DATA SMBJ (DO-214AA) plastic surface mount diode package This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SMB ADVANCE INFORMATION 4,57 4,06 3,94 3,30 2 Index Mark (if needed) 2,40 2,00 1,52 0,76 2,10 1,90 0,20 0,10 2,32 1,96 5,59 5,21 ALL LINEAR DIMENSIONS IN MILLIMETERS MDXXBHA ADVANCE 6 INFORMATION TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 MECHANICAL DATA recommended printed wiring footprint. SMB Pad Size 2.54 2.40 2.16 MDXXBI device symbolization Devices are coded as below. As the device parameters are symmetrical, terminal 1 is not identified. DEVICE SYMOBLIZATION TISP4015H1BJ 4015H1 TISP4020H1BJ 4020H1 TISP4040H1BJ 4040H1 carrier information Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape. ADVANCE CARRIER STANDARD QUANTITY Embossed Tape Reeled 3 000 Bulk Pack 2 000 INFORMATION 7 ADVANCE INFORMATION ALL LINEAR DIMENSIONS IN MILLIMETERS TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 MECHANICAL DATA tape dimensions SMB Package Single-Sprocket Tape 4,10 3,90 1,65 1,55 2,05 1,95 1,85 1,65 0,40 MAX. ADVANCE INFORMATION 5,55 5,45 8,10 7,90 Direction of Feed o 1,5 MIN. 0 MIN. Carrier Tape 8,20 MAX. Cover Tape 4,5 MAX. Embossment 20 Index Mark (if needed) 12,30 11,70 Maximium component rotation Typical component cavity centre line Typical component centre line ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 3,0 mm Reel hub diameter 75 mm MIN. Reel axial hole: 13,0 0,5 mm C. 3000 devices are on a reel. ADVANCE 8 INFORMATION MDXXBJ TISP4015H1BJ, TISP4020H1BJ, TISP4040H1BJ VERY LOW VOLTAGE BIDIRECTIONAL OVERVOLTAGE PROTECTORS AUGUST 1999 - REVISED OCTOBER 2000 Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 2000, Power Innovations Limited ADVANCE INFORMATION 9 ADVANCE INFORMATION IMPORTANT NOTICE