1C4D30120D Rev. C
C4D30120D
Silicon Carbide Schottky Diode
Z-Rec® RectifieR
Features
• 1.2kVSchottkyRectier
• ZeroReverseRecoveryCurrent
• High-FrequencyOperation
• Temperature-IndependentSwitching
• ExtremelyFastSwitching
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies
• PowerFactorCorrection
• MotorDrives
Package
TO-247-3
Maximum Ratings (TC=25°Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 1200 V
VRSM SurgePeakReverseVoltage 1300 V
VRDCPeakReverseVoltage 1200 V
IF
ContinuousForwardCurrent
(PerLeg/Device)
44/88
21.5/43
15/30
A
TC=25˚C
TC=135˚C
TC=152˚C
IFRM RepetitivePeakForwardSurgeCurrent 68*
44* ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IFSM Non-RepetitiveForwardSurgeCurrent 100*
85* ATC=25˚C,tP=10ms,HalfSinePulse
TC=110˚C,tP=10ms,HalfSinePulse
IF,Max Non-RepetitivePeakForwardCurrent 900*
750* ATC=25˚C,tP=10 ms,Pulse
TC=110˚C,tP=10 ms,Pulse
Ptot PowerDissipation(PerLeg/Device) 220/440
95/190 WTC=25˚C
TC=110˚C
TJ OperatingJunctionRange -55 to
+175 ˚C
Tstg StorageTemperatureRange -55 to
+135 ˚C
TO-247MountingTorque 1
8.8
Nm
lbf-in
M3Screw
6-32Screw
*PerLeg,**PerDevice
Part Number Package Marking
C4D30120D TO-247-3 C4D30120
VRRM = 1200 V
IF (TC=135˚C) =43A**
Qc  =155nC**
2C4D30120D Rev. C
0
5
10
15
20
25
30
00.5 11.5 22.5 33.5 4
Electrical Characteristics (Per Leg)
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.6
2.3
1.8
3VIF = 15 A TJ=25°C
IF = 15 A TJ=175°C
IRReverseCurrent 35
120
200
300 μA VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
QCTotalCapacitiveCharge 77.5 nC
VR=800V,IF = 15A
di/dt=200A/μs
TJ=25°C
C TotalCapacitance
1200
70
50
pF
VR=0V,TJ=25°C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
VR=800V,TJ=25˚C,f=1MHz
1.Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC
ThermalResistancefromJunction
toCase
0.34**
0.68* °C/W
****PerDevice,*PerLeg
Typical Performance (Per Leg)
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
IF (A)
VF (V)
0.8
1
1.2
1.4
1.6
1.8
2
0
0.2
0.4
0.6
200 400 600 800 1000 1200 1400 1600 1800
TJ=-55°C
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
VR (V)
IR (mA)
3C4D30120D Rev. C
80
100
120
140
160
0
20
40
60
25 50 75 100 125 150 175
Figure3.CurrentDerating Figure4.PowerDerating
0
20
40
60
80
100
120
140
160
180
200
220
240
25 50 75 100 125 150 175
Figure5.RecoveryChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance (Per Leg)
10%Duty
20%Duty
30%Duty
50%Duty
70%Duty
DC
0
10
20
30
40
50
60
70
80
90
0200 400 600 800 1000
0
200
400
600
800
1000
1200
1400
0.1 110 100 1000
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
Qrr (nC)
VR (V)
4C4D30120D Rev. C
15.0
20.0
25.0
30.0
35.0
40.0
Capacitive Energy (uJ)
0.0
5.0
10.0
15.0
0 200 400 600 800 1000
E
C
Capacitive Energy (uJ)
VRReverse Voltage (V)
Typical Performance
100
1000
IFSM(A)
10
1.E-05 1.E-04 1.E-03 1.E-02
tp(s)
1000
100
10
Figure7.TypicalCapacitanceStoredEnergy,perleg Figure8.Non-RepetitivePeakForwardSurgeCurrent
versusPulseDuration(sinusoidalwaveform),perleg
tp (s)
IFSM (A)
TJ =25°C
TJ=110°C
VR (V)
40
35
30
25
20
15
10
5
0
02004006008001000
EC(mJ)
1E-051E-041E-031E-02
Figure9.DeviceTransientThermalImpedance
Junction To Case Impedance, Z
0.5
Junction To Case Impedance, Z
Thermal Resistance (˚C/W)
T (Sec)
5C4D30120D Rev. C
Package Dimensions
Package TO-247-3
Recommended Solder Pad Layout
TO-247-3
T U
WV
POS Inches Millimeters
Min Max Min Max
A .190 .205 4.83 5.21
A1 .090 .100 2.29 2.54
A2 .075 .085 1.91 2.16
b .042 .052 1.07 1.33
b1 .075 .095 1.91 2.41
b2 .075 .085 1.91 2.16
b3 .113 .133 2.87 3.38
b4 .113 .123 2.87 3.13
c .022 .027 0.55 0.68
D .819 .831 20.80 21.10
D1 .640 .695 16.25 17.65
D2 .037 .049 0.95 1.25
E .620 .635 15.75 16.13
E1 .516 .557 13.10 14.15
E2 .145 .201 3.68 5.10
E3 .039 .075 1.00 1.90
E4 .487 .529 12.38 13.43
e.214 BSC 5.44 BSC
N 3 3
L .780 .800 19.81 20.32
L1 .161 .173 4.10 4.40
ØP .138 .144 3.51 3.65
Q .216 .236 5.49 6.00
S .238 .248 6.04 6.30
T9˚ 11˚ 9˚ 11˚
U9˚ 11˚ 9˚ 11˚
V2˚ 8˚ 2˚ 8˚
W2˚ 8˚ 2˚ 8˚
Part Number Package Marking
C4D30120D TO-247-3 C4D30120
Note: Recommended soldering proles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
66 C4D30120D Rev. C
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacdebrillatorsorsimilaremergencymedicalequipment,aircraftnavigationorcommunicationorcontrol
systems,orairtrafccontrolsystems.
Notes
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
TTT
RIfVVf *+=
VT= 0.97 + (Tj* -2.12*10-3)
RT= 0.031 + (Tj* 3.92*10-4)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Mouser Electronics
Authorized Distributor
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C4D30120D