PZT2222A NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 SOT-223 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 3 EM ITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC) PD Value 40 75 6.0 600 1.5 Unit Vdc Vdc Vdc Adc Junction Temperature Tj 150 C Storage, Temperature Tstg -65 to +150 C Total Device Disspation TA=25 C W Device Marking PZT2222A=GT2222A ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (IC=10 Adc, IE=0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (IE= 10 Adc, IC=0) V(BR)EBO 6.0 - Vdc Base-Emitter Cutoff Current (VCE= 60 Vdc, VBE =-3.0Vdc) IBEX - 20 nAdc Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc) ICEX - 10 nAdc Emitter-Base Cutoff Current (VEB= 3.0Vdc, IC =0) IEBO - 100 nAdc NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the collector lead min. 0.93 inches.2 WEITRON http://www.weitron.com.tw PZT2222A ELECTRICALCHARACTERISTICS- Continued C harac teris tic (T A = 25 C unless otherwise noted) S ymbol Min Max Unit - 10 10 nAdc uAdc 35 50 70 35 100 50 40 300 - - 0.3 1.0 0.6 - 1.2 2.0 2.0 0.25 8.0 1.25 - 8.0x10-4 4.0x10-4 50 75 300 375 5.0 25 35 200 F - 4.0 dB Current-Gain- Bandwidth Product (I C = 20 mAdc, V CE = 20 Vdc, f = 100 MHz) fT 300 - MHz Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Cc - 8.0 pF Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Ce - 25 pF (V CC = 30 Vdc, I C = 150 mAdc, I B(on) = 15 mAdc, V EB( of f) = 0 .5Vdc) Figure 1 td - 10 ns tr - 25 (V CC = 30 Vdc, I C = 150 mAdc, I B(on ) = IB( off) ff) = 15 mAdc) Figure 2 ts - 225 tf - 60 OFF CHARACTERISTICS (continued) Collector-Base Cutof f Current (V CB = 60 Vdc, I E = 0) (V C B = 60 Vdc, I E = 0, TA = 125 C) I CBO ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc, TA = - 55 C) (I C = 150 mAdc, V CE = 10 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 10 Vdc) h FE Collector-Emitter Saturation Voltages (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) V CE(sat) Base-Emitter Saturation Voltages (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) V BE( sat) Input Impedance 5 (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) 5h ie 5 Voltage Feedback Ratio (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) h re Small-Signal Current Gain (V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) h fe Output Admittance 5 (V CE = 10 Vdc, I C= 1.0 mAdc, f = 1.0 kHz) (V CE = 10 Vdc, I C= 10 mAdc, f = 1.0 kHz) 5h oe 5 Noise Figure (V CE = 10 Vdc, I C = 100 uAdc, f = 1.0 kHz) - Vdc Vdc k - - umhos DYNAMICCHARACTERISTICS SWITCHINGTIMES (T A = 25 C) Delay Time Rise Time Storage Time Fall Time WEITRON http://www.weitron.com.tw ns PZT2222A VCC Vi R2 90% 10% 0 tr Vo R1 Vi D.U.T. tp FIG.1 Input Waveform and Test Circuit for Determining Delay Time and Rise Time Vi = - 0.5 V to +9.9 V , VCC = +30 V, R1 = 619 PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR tp tr d < < = , R2 = 200 200 ns 2 ns 0.02 . OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME Zi Ci tr > 100 k < 12 pF < 5 ns VCC Vi +16.2 V R2 R1 0 TIME D.U.T. Vi R3 Vo OSCILLOSCOPE D1 R4 - 13.8 V tf 100 ms VBB FIG.2 Input Waveform and Test Circuit for Determining Storage Time and Fall Time WEITRON http://www.weitron.com.tw PZT2222A SOT-223 Outline Dimensions unit:mm A F DIM 4 S B 1 2 3 D L G J C H WEITRON http://www.weitron.com.tw M K A B C D F G H J K L M S MILLIMETERS MIN MAX 6.30 3.30 1.50 0.60 2.90 2.20 0.020 0.24 1.50 0.85 0 6.70 6.70 3.70 1.75 0.89 3.20 2.40 0.100 0.35 2.00 1.05 10 7.30