ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
VCEO
VCBO
VEBO
IC(DC)
Value Unit
Vdc
Vdc
Vdc
Adc
Rating
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 10 µAdc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc, V =-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= 60 Vdc, VBE=-3.0Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
6.0
-
-
-
-
-
-
100
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
PZT2222A
SOT-223
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
NPN Silicon Planar Epitaxial Transistor
(Ta=25 C)
W
Junction Temperature Tj150
Storage, Temperature -65 to +150
Device Marking
PZT2222A=GT2222A
40
75
20
10
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
3.EMITTER
2.COLLECTOR
1.BASE
BE
C
Total Device Disspation T =25 C
A1.5
4.COLLECTOR
12
3
4
BASE
1
COLLECTOR
2, 4
3
EM ITTER
40
75
6.0
600
collector lead min. 0.93 inches.
2
PZT2222A
WEITRON
http://www.weitron.com.tw
ELECTRICAL CHARACTERISTICS Continued (T A = 25 C unless otherwise noted)
C haracteris tic S ymbol Min Max Unit
OFF CHARACTERISTICS (continued)
Collector-Base Cutoff Current
(V CB = 60 Vdc, IE = 0)
(V C B = 60 Vdc, IE = 0, TA = 125 C)
ICBO
-
-
10
10
nAdc
uAdc
ON CHARACTERISTICS
DC Current Gain
(I C = 0.1 mAdc, V CE = 10 Vdc)
(I C = 1.0 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc)
(I C = 10 mAdc, V CE = 10 Vdc, TA = - 55 C)
(I C = 150 mAdc, V CE = 10 Vdc)
(I C = 150 mAdc, V CE = 1.0 Vdc)
(I C = 500 mAdc, V CE = 10 Vdc)
hFE
35
50
70
35
100
50
40
-
-
-
-
300
-
-
-
Collector-Emitter Saturation Voltages
(I C
= 150 mAdc, IB
= 15 mAdc)
(I C
= 500 mAdc, IB
= 50 mAdc)
VCE(sat)
-
-
0.3
1.0
Vdc
Base-Emitter Saturation Voltages
(I C = 150 mAdc, IB = 15 mAdc)
(I C = 500 mAdc, IB = 50 mAdc)
VBE( sat)
0.6
-
1.2
2.0
Vdc
Input Impedance 5
(V CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(V CE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
5hie5
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(V CE
= 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(V CE
= 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
-
-
8.0x10-4
4.0x10-4
-
Small-Signal Current Gain
(V CE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(V CE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe
50
75
300
375
-
Output Admittance 5
(V CE = 10 Vdc, IC
= 1.0 mAdc, f = 1.0 kHz)
(V CE = 10 Vdc, IC
= 10 mAdc, f = 1.0 kHz)
5hoe5
5.0
25
35
200
umhos
Noise Figure (V CE = 10 Vdc, IC = 100 uAdc, f = 1.0 kHz) F-4.0 dB
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product
(I C
= 20 mAdc, V CE = 20 Vdc, f = 100 MHz)
fT300 -MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cc-
-
-
8.0 pF
Input Capacitance
(V EB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Ce-25 pF
SWITCHING TIMES (TA = 25 C)
Delay Time (V CC = 30 Vdc, IC = 150 mAdc,
I= 15 mAdc, V EB(of f) = 0 .5Vdc)
td-10 ns
Rise Time IB(on) f)
Figure 1 tr-25
Storage Time (V CC = 30 Vdc, IC = 150 mAdc,
IB(on ) =I
B( ff) = 15 mAdc)
ts-225 ns
Fall Time I = IB( off)
Figure 2 tf-60
WEITRON
http://www.weitron.com.tw
PZT2222A
Vi
90%
10%
tp
tr
0
VCC
R2
R1
ViD.U.T.
Vo
FIG.1 Input Waveform and Test Circuit for Determining Delay Time and Rise Time
FIG.2 Input Waveform and Test Circuit for Determining Storage Time and Fall Time
Vi = - 0.5 V to +9.9 V , VCC = +30 V, R1 = 619 , R2 = 200 .
PULSE GENERATOR: OSCILLOSCOPE:
PULSE DURATION tp200 ns INPUT IMPEDANCE Zi> 100 k
RISE TIME tr2 ns INPUT CAPACITANCE Ci<
<12 pF
DUTY FACTOR = 0.02 RISE TIME tr< 5 ns
tf100 ms
-13.8 V
0
+16.2 V
Vi
TIME
VCC
Vo
OSCILLOSCOPE
D.U.T.
Vi
R2
R3
R4
D1
R1
VBB
-
<
-
d
WEITRON
http://www.weitron.com.tw
SOT-223 Outline Dimensions unit:mm
PZT2222A
H
S
F
A
B
D
G
L
4
123
C
M
K
J
DIM
A
MIN MAX
MILLIMETERS
6.30 6.70
B3.30 3.70
C1.50 1.75
D0.60 0.89
F2.90 3.20
G2.20 2.40
H0.020 0.100
J0.24 0.35
K1.50 2.00
L0.85 1.05
M0 10
S6.70 7.30
