PD - 97500A IRF6201PbF VDS 20 V 2.45 m 2.75 m Qg (typical) 130 nC ID 27 A RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) (@TA = 25C) HEXFET(R) Power MOSFET 6 ' 6 ' 6 ' * ' SO-8 Applications * OR-ing or hot-swap MOSFET * Battery operated DC motor inverter MOSFET * System/Load switch Features and Benefits Features Low RDSon ( 2.45m @ Vgs = 4.5V) Industry-standard SO-8 package RoHS compliant containing no lead, no bromide and no halogen Orderable part number Package Type IRF6201PbF IRF6201TRPbF SO8 SO8 Benefits Lower conduction losses results in Multi-vendor compatibility Environmentally Friendly Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 20 VGS Gate-to-Source Voltage 12 ID @ TA = 25C Continuous Drain Current, VGS @ 4.5V 27 ID @ TA = 70C Continuous Drain Current, VGS @ 4.5V 22 IDM Pulsed Drain Current 110 e e c PD @TA = 25C Power Dissipation PD @TA = 70C TJ Power Dissipation Linear Derating Factor Operating Junction and TSTG Storage Temperature Range www.irf.com 2.5 1.6 0.02 -55 to + 150 Units V A W W/C C 1 11/11/2010 IRF6201PbF Static @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage Parameter 20 --- --- V VDSS/TJ RDS(on) Breakdown Voltage Temp. Coefficient --- --- 4.6 1.90 --- 2.45 --- 2.10 2.75 1.1 Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage 0.5 --- IDSS Drain-to-Source Leakage Current --- --- 1.0 Gate-to-Source Forward Leakage --- --- --- --- 150 100 Gate-to-Source Reverse Leakage --- --- -100 Qg Qgs Total Gate Charge Gate-to-Source Charge --- --- 130 16 195 --- Qgd td(on) Gate-to-Drain Charge Turn-On Delay Time --- --- 60 29 --- --- tr td(off) Rise Time Turn-Off Delay Time --- --- 100 320 --- --- tf Fall Time --- 265 --- Ciss Coss Input Capacitance Output Capacitance --- --- 8555 1735 --- --- Crss Reverse Transfer Capacitance --- 1290 --- Min. Typ. Max. IGSS Conditions VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA VGS = 4.5V, ID = 27A m VGS = 2.5V, ID = 22A d d V A nA nC VDS = VGS, ID = 100A VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VGS = 4.5V VDS = 10V ID = 22A VDD = 20V, VGS = 4.5V ns pF ID = 1.0A RG = 6.8 See Figs. 10a & 10b VGS = 0V VDS = 16V = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) --- --- 2.5 ISM Pulsed Source Current (Body Diode) --- --- 110 c Units A Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S VSD Diode Forward Voltage --- --- 1.2 V TJ = 25C, IS = 2.5A, VGS = 0V trr Reverse Recovery Time --- 82 120 ns TJ = 25C, IF = 2.5A, VDD = 16V Qrr Reverse Recovery Charge --- 180 270 nC di/dt = 100/s Thermal Resistance Parameter RJL RJA Junction-to-Drain Lead f Junction-to-Ambient e Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ approximately 90C. 2 d d Typ. Max. Units --- --- 20 50 C/W IRF6201PbF 1000 1000 100 BOTTOM TOP 100 10 60s PULSE WIDTH 1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V Tj = 25C BOTTOM 10 1.3V 60s PULSE WIDTH 1.3V Tj = 150C 1 0.1 0.1 1 10 0.1 100 1 10 100 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V 100 T J = 25C 10 TJ = 150C 1 VDS = 10V 60s PULSE WIDTH 0.1 ID = 27A 1.4 VGS = 4.5V 1.2 1.0 0.8 0.6 0 1 2 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 3 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig 4. Normalized On-Resistance vs. Temperature IRF6201PbF 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd ID= 22A VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) C oss = C ds + C gd Ciss 10000 12.0 Coss Crss VDS= 16V VDS= 10V 10.0 8.0 6.0 4.0 2.0 1000 0.0 1 10 100 0 VDS, Drain-to-Source Voltage (V) 10 1000 T J = 150C TJ = 25C 200 250 300 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 1msec 10msec 10 DC 1 T A = 25C Tj = 150C Single Pulse VGS = 0V 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 150 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 100 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 50 0 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 100 IRF6201PbF 30 RD V DS V GS ID, Drain Current (A) 25 D.U.T. RG + -V DD 20 10V 15 Pulse Width 1 s Duty Factor 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 0 25 50 75 100 125 VDS 150 90% T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJA ) C/W 100 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 0.1 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 1000 5 ID = 27A 4 3 T J = 125C 2 T J = 25C 1 1 2 3 4 5 6 7 8 9 10 11 12 RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) IRF6201PbF 3.0 Vgs = 2.5V 2.5 Vgs = 4.5V 2.0 1.5 1.0 0 50 VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance vs. Gate Voltage 100 150 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current Current Regulator Same Type as D.U.T. QG VGS 50K QGS QGD 12V .2F .3F D.U.T. VG + V - DS VGS Charge 3mA IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform 6 Fig 14b. Gate Charge Test Circuit 200 IRF6201PbF 90000 80000 1.0 70000 0.8 60000 Power (W) VGS(th) , Gate threshold Voltage (V) 1.2 ID = 100A 0.6 0.4 50000 40000 30000 20000 0.2 10000 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C ) Fig 15. Typical Threshold Voltage vs. Junction Temperature www.irf.com 0 1E-08 1E-07 1E-06 1E-05 1E-04 Time (sec) Fig 16. Typical Power vs. Time 1E-03 IRF6201PbF SO-8 Package Outline (Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ,1&+(6 0,1 0$; $ $ E F ' ( %$6,& H H %$6,& + . / \ ',0 % $ + >@ ( $ ; H H ;E >@ $ 0,//,0(7(56 0,1 0$; %$6,& %$6,& .[ & $ \ >@ ;/ ;F & $ % )22735,17 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5) 026)(7 ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; ) '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 237,21$/ < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 IRF6201PbF SO-8 Tape and Reel TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Consumer (per JEDEC JESD47F guidelines) MSL1 SO-8 (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/10 www.irf.com