NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94
FEATURES
* 12 Volt VCEO
* Gain of 400 at IC=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 12 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 10 A
Continuous Collector Current IC3A
Practical Power Dissipation* Ptotp 1.5 W
Power Dissipation at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 12 V IC
=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 12 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB=10V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.04
0.06
0.18
0.35
V
V
V
V
IC
=0.1A, IB=1mA
IC
=0.1A, IB=0.5mA*
IC
=1A, IB=50mA*
IC
=3A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.1 V IC
=3A, IB=20mA*
Base-Emitter
Turn-On Voltage
VBE(on) 1 V IC=3A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE 500
400
100
IC
=0.1A, VCE
=2V*
IC
=3A, VCE
=2V*
IC
=10A, VCE
=2V*
E-Line
TO92 Compatible
ZTX688B
3-232
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency fT150 MHz IC
=50mA, VCE=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5V, f=1MHz
Output Capacitance Cobo 40 pF VCB
=10V, f=1MHz
Switching Times ton
toff
40
500
ns
ns
IC
=500mA, IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX688B
-40 0.0001
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (Watts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20 40 60 80 100 120 200180160140 0.001
0
100
200
D=0.2
D=0.1
Single Pul se
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperature
0
D=1 (D.C.)
3-233
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94
FEATURES
* 12 Volt VCEO
* Gain of 400 at IC=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 12 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 10 A
Continuous Collector Current IC3A
Practical Power Dissipation* Ptotp 1.5 W
Power Dissipation at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 12 V IC
=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 12 V IC
=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB=10V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.04
0.06
0.18
0.35
V
V
V
V
IC
=0.1A, IB=1mA
IC
=0.1A, IB=0.5mA*
IC
=1A, IB=50mA*
IC
=3A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat) 1.1 V IC
=3A, IB=20mA*
Base-Emitter
Turn-On Voltage
VBE(on) 1 V IC=3A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE 500
400
100
IC
=0.1A, VCE
=2V*
IC
=3A, VCE
=2V*
IC
=10A, VCE
=2V*
E-Line
TO92 Compatible
ZTX688B
3-232
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency fT150 MHz IC
=50mA, VCE=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5V, f=1MHz
Output Capacitance Cobo 40 pF VCB
=10V, f=1MHz
Switching Times ton
toff
40
500
ns
ns
IC
=500mA, IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX688B
-40 0.0001
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (Watts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20 40 60 80 100 120 200180160140 0.001
0
100
200
D=0.2
D=0.1
Single Pul se
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperature
0
D=1 (D.C.)
3-233
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICA L CHA RA C TERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
VCE=2V
VCE=2V
1.5K
1K
500
h
FE
- Typical Gain
VCE - Collector Voltage (Volts)
Safe Ope r ating Area
0.1 100110
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
-55°C
+25°C
+100°C
+175°C
IC/IB=100
Tamb=25°C
IC/IB=10
IC/IB=200
IC/IB=100 IC/IB=100
-55°C
+25°C
+100°C
+175°C
0
0
D.C.
1s
100ms
10ms
1.0ms
0.1ms
ZTX688B
3-234
