For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 1
AMPLIFIERS - LINEAR & POWER - SMT
HMC636ST89 / 636ST89E
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
v02.0311
General Description
Features
Functional Diagram
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplier compatible with virtually
any PCB material or thickness.
Low Noise Figure: 2.2 dB
High P1dB Output Power: +22 dBm
High Output IP3: +40 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
Typical Applications
The HMC636ST89(E) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
• CATV & Cable Modem
• Microwave Radio
Electrical Specications, Vs= 5.0 V, TA = +25° C
Parameter Min Typ. Max Min. Typ. Max. Units
Frequency Range 0.2 - 2.0 2.0 - 4.0 GHz
Gain 10 13 5 10 dB
Gain Variation Over Temperature 0.01 0.02 0.01 0.02 dB/ °C
Input Return Loss 10 10 dB
Output Return Loss 13 15 dB
Reverse Isolation 22 20 dB
Output Power for 1 dB Compression (P1dB) 19 22 20 23 dBm
Output Third Order Intercept (IP3) 36 39 36 39 dBm
Noise Figure 2.5 2 dB
Supply Current (Icq) 155 155 175 mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
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Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC636ST89 / 636ST89E
v02.0311 GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
-20
-15
-10
-5
0
5
10
15
20
0123456
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
01234
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
01234
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
01234
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
01234
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
01234
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 3
AMPLIFIERS - LINEAR & POWER - SMT
Power Compression @ 2200 MHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Input Tone Power
Power Compression @ 850 MHz
Gain, Power, Output IP3 & Supply Current
vs. Supply Voltage @ 850 MHz
HMC636ST89 / 636ST89E
v02.0311 GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
0
5
10
15
20
25
30
01234
+25C
+85C
-40C
P1dB (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
01234
+25C
+85C
-40C
Psat (dBm)
FREQUENCY (GHz)
-8
-4
0
4
8
12
16
20
24
28
-20 -16 -12 -8 -4 0 4 8 12 16
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-8
-4
0
4
8
12
16
20
24
28
32
-20 -16 -12 -8 -4 0 4 8 12 16
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
20
25
30
35
40
45
01234
0 dBm
+ 5 dBm
+10 dBm
IP3 (dBm)
FREQUENCY (GHz)
10
20
30
40
50
0
20
40
60
80
100
120
140
160
4.5 4.75 5 5.25 5.5
Is
Gain
P1dB
Psat
OIP3
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Is (mA)
Vs (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
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Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +5.5 Volts
RF Input Power (RFIN)(Vcc = +5 Vdc) +16 dBm
Channel Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C) 0.86 W
Thermal Resistance
(Channel to lead) 75.6 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HMC636ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H636
XXXX
HMC636ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H636
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC636ST89 / 636ST89E
v02.0311 GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9
9 - 5
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
Pin Descriptions
Pin Number Function Description Interface Schematic
1 RFIN
This pin is DC coupled. An off-chip
DC blocking capacitor is required.
3 RFOUT
RF Output and DC BIAS for the amplier.
See Application Circuit for off-chip components.
2, 4 GND These pins and package bottom must
be connected to RF/DC ground.
HMC636ST89 / 636ST89E
v02.0311 GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 6
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 119394 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 - J4 DC Pin
C1 - C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0603 Pkg.
C5 2.2 µF Capacitor, Tantalum
L1 47 nH Inductor, 0603 Pkg.
U1 HMC636ST89(E)
PCB [2] 119392 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: FR4
HMC636ST89 / 636ST89E
v02.0311 GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz