Match GaAs SPST Switch, DC - 3 GHz
with TTL/CMOS Control Input
SW-311
CR-9
V 4.00
Features
nIntegral TTL Driver
nUltra Low Power Consumption
nFast Switching Speed: 4 ns Typical
nSurface Mount Package
n50 Ohm Nominal Impedance
nMIL-STD-883 Screening Available
Description
M/A-COM’s SW-311 is a GaAs FET SPST absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The
SW-311 is ideally suited for use where fast speed, low
power consumption and broadband applications are
required. MIL-STD-883 Screening Available.
Electrical Specifications1,2
(From –55°C to +85°C)
Parameter Test Conditions Frequency Units Min Typ Max
Insertion Loss — DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
dB
dB
dB
dB
—
—
—
—
—
—
—
—
1.3
1.2
1.0
0.8
VSWR — DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
Ratio
Ratio
Ratio
Ratio
—
—
—
—
—
—
—
—
1.5:1
1.4:1
1.3:1
1.2:1
Isolation — DC - 3000 MHz
DC - 2000 MHz
DC - 1000 MHz
DC - 500 MHz
dB
dB
dB
dB
27
36
50
65
—
—
—
—
—
—
—
—
Trise, Tfall 10% to 90% — ns — 4 —
Ton, Toff 1.3V CTL to 90% / 10% — ns — 12 —
Transients In-Band — mV — 40 —
1 dB Compression Input Power 0.05 GHz
0.5 GHz to 3 GHz dBm
dBm —
— +21
+27 —
—
IP2 Two-Tone Input Power up to
+5 dBm 0.05 GHz
0.5 GHz to 3 GHz dBm
dBm —
— +62
+68 —
—
IP3 Two-Tone Input Power up to
+5 dBm 0.05 GHz
0.5 GHz to 3 GHz dBm
dBm —
— +40
+46 —
—
Vin Low 0V to 0.8V — µA — — 1
Vin High 2.0V to 5.0V — µA — — 1
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.