DSI45-08A
13
Single Diode
Standard Rectifier
Part number
DSI45-08A
Backside: cathode
FAV
F
V V1.23
RRM
45
800
=
V=V
I=A
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI45-08A
V = V
A²s
A²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.26
R0.55 K/W
R
min.
45
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
270 WT = 25°C
C
RK/W
45
800
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Unit
1.57
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
175
r
F
9.1 mΩ
V1.23T = °C
VJ
I = A
F
V
45
1.66
I = A
F
90
I = A
F
90
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V800
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
18
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
480
520
840
805
A
A
A
A
410
440
1.15
1.13
800
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
900
0.3
IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI45-08A
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part Number
Logo
IXYS
1234
Lot#
yywwZ
Location
XXXXXXXXX
DSI45-16A TO-247AD (2) 1600
Package
T
op
°C
M
D
Nm1.2
mounting torque
0.8
T
VJ
°C175
virtual junction temperature
-40
Weight g6
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N120
mounting force with clip
20
I
RMS
RMS current
70 A
per terminal
150-40
DSI45-16AR ISOPLUS247 (2) 1600
TO-247
Similar Part Package Voltage class
DSI45-12A TO-247AD (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
DSI45-08A 471887Tube 30DSI45-08AStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.81
mΩ
V
0 max
R
0 max
slope resistance *
6.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
°C
* on die level
175
IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI45-08A
S
Ø
P
Ø
P1 D2
D1
E1
4
1 2 3
L
L1
2x
b2
2x
b
e
2x
E2
D
E
Q
A
A2
A1
C
Sym. Inches Millimeter
min. max. min. max.
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e 0.430 BSC 10.92 BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
Ø P 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S 0.242 BSC 6.14 BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D1 0.515 - 13.07 -
D2 0.020 0.053 0.51 1.35
E1 0.530 - 13.45 -
Ø P1 - 0.29 - 7.39
13
Outlines TO-247
IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
DSI45-08A
0.001 0.01 0.1 1
200
240
280
320
360
4
00
2 3 4 5 6 7 8 9 011
0
200
400
600
800
1000
1
2
00
0.5 1.0 1.5
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50
0
20
40
60
80
0 50 100 150 200
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
I
2
t
[A
2
s]
I
FSM
[A]
I
F
[A]
V
F
]s[t]V[
P
tot
[W]
I
dAVM
[A] T
amb
[°C]
t [ms]
Z
th
[K/W]
0 50 100 150 200
0
20
40
60
80
T
C
[°C]
50 Hz, 80% V
RRM
T
VJ
= 45°C T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 150°C
t [ms]
I
dAVM
[A]
V
R
= 0 V
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
T
VJ
= 150°C
125°C
25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
i
1
2
3
4
R
i
0.033
0.095
0.164
0.258
t
i
0.0006
0.0039
0.033
0.272
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20191129eData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved