SEMIKRON INC QbE D a 6136671 0001200 3 a T (25-7 Thyristors Thyristoren Thyristors Types Vasm Varna hems "| lav lism it ( ay) Vr Vico) tr ly h Ver ler Vora (lease) | (25C; | (25C; dt/o | max. max, max. min. min. 10ms) | 10ms) (h) (Re= (tp = 100 ps) 33 Q) Vv Vv A A A As Vius Vv Vv mQ mA mA Vv mA SKT 240/04D 500 400 600 240 5000 | 125000) D: 500 2,3 1,0 1,4 250 600 3 200 fO8D _ 900 800 (92C) E: 1000 | (1000 A) A2D,E 1300 1200 M4E 1500 1400 M6D,E 1700 1600 M8D,E 1900 1800 SKT 250/04C 500 400 450 250 7000 | 245000] C: 200 1,65 4,0 0,7 250 600 3 200 706C 700 | 600 "@5C) E:1000 | (800A) /08C 900 800 A2C,E 1300 1200 A4E 1500 1400 AM6C,E 1700 1600 SKT 300/04C 500 400 | 550 300 11000 | 605000] C: 200 4,45 0,9 0,6 250 600 3 200 /06C 700 600 (85C) E: 1000 | (800A) /08C $00 800 A2C,E 1300 1200 Si4E 1500 1400 M6C,E 1700 1600 SKT 340/04D 500 400 700 340 5700 | 162000| D: 500 1,9 1,0 1,0 250 600 3 200 /08D 900 800 (82C) E: 1000 | (1000 A) A2D,E 1300 1200 M4E 1500 1400 AI6D,E 1700 1600 Ai8D,E 1900 1800 SKT 490/04D 500 400 1000 490 8000 | 320000] D: 500 2,1 1,1 0,7 300 1500 3 250 /08D 900 800 (80C) E:1000 | (1500.4) AM2D,E 1300 1200 N4E 1500 1400 AGD,E 1700 1600 A8BD,E 1900 1800 SKT 520/18E 1800 1800 1400 20 9000 | 405000} 1000 2,0 1,2 0,55 360 1500 3 200 /20E 2100 2000 (85C) (1500 A) /22E 2300 2200 SKT 600/04D 500 400 1400 600 11500 | 660000] D: 500 2,0 1,0 0,4 300 1500 3,5 200 /08D 900 800 (85C) E: 1000 | (2400A) A2D,E 1300 1200 AM4E 1500 1400 AGD,E 1700 1600 A8D,E 1900 1800 SKT 760/04D 500 400 1600 760 15000 [1125000] D: 500 1,65 0,92 0,3 300 1500 3,5 200 /08D 900 800 (80C) E:1000 | (2400 A) AM2D,E 1300 1200 M4E 1500 1400 AI6D,E 1700 1600 A8D,E 1900 1800 SKT 1000/04D 500 400 2300 1465 19000 | 1,8-106 | D: 500 1,9 1,14 0,243 00 1500 5 250 /o8D 900 800 (68C) E: 1000 | (8000 A) A2D 1300 1200 A2E 1300 1200 /14E 1500 1400 AGE 1700 1600 ABE +900 1800 /22DL2 2300 2200 /26DL2 2700 2600 /28DL2 2900 2800 SKT 1200/12D 1300 1200 2800 1780 26000 {3,38-10%| D: 500 1,7 0,95 0,18 500 1500 5 250 A2E 1300 1200 (55C) E:1000 | (8000 A) MN4E 1500 1400 AGE 1700 1600 A8E 1900 1800 26 neSEMIKRON INC OLE D @ 8136671 0001201 5 SEMIKRUN Innovation + Service - oe . - we SF Tiristori Tiristores Tiristores 7-aS Ty | Pine | Rarcn lav | hav | Case CaseB7 CaseB8 ., max. | cont. sin.180 |rec.120 43) TO-209 AD TO-200 AB (TO-108)0 i c | ecyw | c/w A A e322 425 | 0,070 | 0,020 | { 2xPe/iso | 140 | 130 | BB 2xP8/180F | 300 | 260 3 430 | 0,11 | 0,015 | { K0,55 120 | 110 | B7 KO,55F 230 | 225 P1/120 415 | 108 P1/200 140 | 130 P1/200F | 240 | 230 430 | 0,10 | 0,015 | [K0,55 420 | 110 | B7 K0,55F 270 | 250 P1/120 125 | 108 . P1/200 155 | 140 A la4-A6UNF2A) P1/200F 285 270 SKT 215, M=60Nm SKT 250, SKT 300 w=450g | SKT 240, SKT 340 125 | 0,070 | 0,020 | f 2xPs/1so | 150 | 140 | BB 2xP8/180F | 330 | 310 Case B9 TO-200 AB oe \ 239 i, HK % oe 425 | 0,045 | 0,012 | [2xpei80 | 170 | 150 | Bg 2xPs/1g0F | 410 | 375 125 10,04 | 0,01 2xP8/180 | 185 | 175 | Bi0 F=5,2...8kN 2xPB/i80F | 470 | 430 SKT 490 w= 105g 2xP9/210F | 520 | 480 125 |0,04 | 0,007 |{2xps1so | 200 | 180 | B10 Case B 10 <A 2xP8/180F | 550 | 500 TO-200 AC ; \ ey exp9/200F | 600 | 550 % (9 m/s) tia 430 | 0,038 | 0,008 | {2xPe/igo | 220 | 210 | B10 : 2xPB/1B0F | 615 | 565 2xP9/210F | 700 | 650 (9m/s) F=10...13kN SKT520, SKT 600, SKT 760 w=240g 125 | 0,021 | 0,005 Bi4 Case B 14 ee 4p a) ae io pe 75 _-_____>| a 84875 | 3 mh! c G & 3 a 425 | 0,021 | 0,005 Bi4 & g a 636 A 300 2 o SKT 1000 848 F=22...25kN SKT 1200 w=550g Dimensions inmm C: Cathode terminal (red sleeve) A: Anode terminal G: Gate terminal (yellow sleeve) HK: Auxiliary cathode terminal (red sleeve) 27