GI820 thru GI828 Vishay Semiconductors formerly General Semiconductor Fast Switching Rectifier Case Style P600 Features * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High surge current capability * High forward current operation * Fast switching for high efficiency * Construction utilizes void-free molded plastic technique * Uniform molded body * High temperature soldering guaranteed: 250C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension 1.0 (25.4) MIN. 0.360 (9.1) 0.340 (8.6) 0.360 (9.1) 0.340 (8.6) 0.052 (1.32) 0.048 (1.22) DIA. Reverse Voltage 500 to 800 V Forward Current 5.0 A Mechanical Data Case: Void-free molded plastic body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.07 oz., 2.1 g Packaging codes/options: 1/750 EA. per Bulk Box 4/800 EA. per 13" Reel (52mm Tape) 23/300 EA. per Ammo Box (52mm Tape) 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum non-repetitive peak reverse voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance (1) Operating junction and storage temperature range Electrical Characteristics Symbol GI820 GI821 GI822 GI824 GI826 GI828 Unit VRRM VRMS VDC VRSM 50 35 50 75 100 70 100 150 200 140 200 250 400 280 400 450 600 420 600 650 800 560 800 880 V V V V IF(AV) 5.0 A IFSM 300 A RJA TJ, TSTG 10 -50 to +150 C/W C Ratings at 25C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage at 5.0A TJ=25C at 15.7A TJ=100C Maximum DC reverse current TA=25C at rated DC blocking voltage TA=100C Typical junction capacitance at 4.0V, 1MHz Maximum reverse recovery time IF=1.0A, VR=30V, di/dt=50A/s, Irr = 10% IRM Maximum reverse recovery current IF=1.0A, VR=30V, di/dt=50A/s, VF A CJ 1.10 1.05 10 1.0 300 trr 200 ns IRM(REC) 2.0 ns IR V pF Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88629 21-Mar-02 www.vishay.com 1 GI820 thru GI828 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curves Fig. 2 - Forward Current Derating Curve 7.0 20 I(pk) I(AV) = 1.1 x 1.1" (30 x 30mm) Copper Pads 5.0 4.0 3.0 Capacitive Load I(pk) 5.0 = 10 I(AV) 20 2.0 1.0 0 20 60 40 80 100 120 140 160 Average Forward Current (A) Average Forward Current (A) Resistive or Inductive Load 6.0 L= 12 0.25 (3. 2m m) " (6 8 L=0 1.6 x 1.6 x 0.04" (40 x 40 x 1mm) Copper Heatsink .3m m) .375 " (9.5 mm) 2" (15 .9mm ) L = 0.6 4 80 85 90 95 100 105 110 115 120 125 Ambient Temperature (C) Lead Temperature C Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Instantaneous Forward Characteristics 350 300 250 TA = 25C 200 TJ= 125C 150 Instantaneous Forward Current (A) 100 8.3ms Single Half Sine-Wave (JEDEC Method) 100 10 1 TJ = 25C Pulse Width = 300s 1% Duty Cycle 10 1 0.1 0.6 100 0.8 Number of Cycles at 60 HZ RJL Thermal Resistance From Junction to Lead, CW TJ = 100C 1 TJ = 50C TJ = 25C 0.01 0 20 40 60 80 Percent of Rated Peak Reverse Voltage (V) www.vishay.com 2 1.2 1.4 1.6 1.8 2.0 Fig. 6 - Typical Thermal Resistance 10 0.1 1.0 Instantaneous Forward Voltage (V) Fig. 5 - Typical Reverse Characteristics Instantaneous Reverse Current (A) 0.1 2" 0 75 180 400 Peak Forward Surge Current (A) L= 16 L = Lead Length 100 25 L = Lead Length 20 15 10 5.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Equal Lead Lengths to Heatsink (Inches) Document Number 88629 21-Mar-02