IRF640, RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17422. Ordering Information PART NUMBER PACKAGE June 1999 File Number 1585.5 Features * 18A, 200V * rDS(ON) = 0.180 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speed * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol BRAND IRF640 TO-220AB IRF640 RF1S640SM TO-263AB RF1S640 D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A. S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) 4-208 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRF640, RF1S640SM TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg IRF640, RF1S640SM 200 200 18 11 72 20 125 1.0 580 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V, (Figure 10) 200 - - Gate Threshold Voltage VGS(TH) VGS = VDS , ID = 250A 2 - 4 V VDS = Rated BVDSS , VGS = 0V - - 25 A VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC - - 250 A VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) 18 - - A - - 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 1) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 1) Forward Transconductance (Note 1) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VGS = 20V - 0.14 0.18 6.7 10 - S - 13 21 ns - 50 77 ns - 46 68 ns - 35 54 ns VGS = 10V, ID 18A, VDS = 0.8 x Rated BVDSS (Figure 14) Gate Charge is Essentially Independent of Operating Temperature IG(REF) = 1.5mA - 43 64 nC - 8 - nC - 22 - nC VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF ID = 10A, VGS = 10V (Figures 8, 9) VDS 10V, ID = 11A (Figure 12) VDD = 100V, ID 18A, RGS = 9.1, RL = 5.4, MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Qg(TOT) Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS - 400 - pF Reverse Transfer Capacitance CRSS - 100 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 1 oC/W Internal Drain Inductance LD Measured From the Contact Screw on Tab to Center of Die Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die Internal Source Inductance LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient RJA Free Air Operation, IRF640 - - 62 oC/W RJA RF1S640SM Mounted on FR-4 Board with Minimum Mounting Pad - - 62 oC/W 4-209 IRF640, RF1S640SM Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 2) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN TYP MAX UNITS - - 18 A - - 72 A - - 2.0 V 120 240 530 ns 1.3 2.8 5.6 C G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 18A, dISD/dt = 100A/s TJ = 25oC, ISD = 18A, dISD/dt = 100A/s NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 3.37mH, RG = 25, peak IAS = 18A. Typical Performance Curves Unless Otherwise Specified 20 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 16 12 8 4 0.2 0 0 0 50 100 25 150 50 TC, CASE TEMPERATURE (oC) 75 100 150 125 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC , TRANSIENT THERMAL IMPEDANCE (oC/W) POWER DISSIPATION MULTIPLIER 1.2 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 10-5 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 tP, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-210 1 10 IRF640, RF1S640SM Typical Performance Curves 1000 Unless Otherwise Specified (Continued) 30 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10s 100s 10 1ms 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 1 1 24 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) TC = 25oC 100 7V 18 12 6V 6 DC 5V 4V 0 0 1000 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) VGS = 7V 18 VGS = 6V 12 VGS = 5V VGS = 4V 0 0 1.0 2.0 3.0 4.0 5.0 25oC 1 0.1 2 4 6 8 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.9 0.6 VGS= 10V VGS = 20V 0 30 45 60 75 ID , DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-211 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () 3.0 1.2 15 10 FIGURE 7. TRANSFER CHARACTERISTICS PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 60 150oC FIGURE 6. SATURATION CHARACTERISTICS 0.3 48 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1.5 36 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V VGS = 10V ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 100 24 6 24 FIGURE 5. OUTPUT CHARACTERISTICS VGS = 8V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 12 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 10V 8V 2.4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 18A 1.8 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF640, RF1S640SM Typical Performance Curves Unless Otherwise Specified (Continued) 3000 1.25 VGS = 0V, f = 1MHz 1.15 1.05 0.95 0.85 1800 CISS 1200 COSS 600 CRSS 0.75 -60 -40 -20 0 20 40 80 60 0 100 120 140 160 10 1 TJ , JUNCTION TEMPERATURE (oC) 15 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 1000 ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 12 25oC 9 150oC 6 3 0 0 6 12 18 24 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 150oC 100 25oC 10 1 30 0.4 0.8 1.2 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 0 ID , DRAIN CURRENT (A) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE VGS , GATE TO SOURCE VOLTAGE (V) 20 ID = 28A VDS = 40V 16 VDS = 100V 12 VDS = 160V 8 4 0 0 15 30 45 60 75 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-212 100 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE gfs , TRANSCONDUCTANCE (S) CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 2400 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 2.0 IRF640, RF1S640SM Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2F 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-213 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF640, RF1S640SM All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. 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