4-208
File Number
1585.5
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 |Copyright © Intersil Corporation 1999
IRF640, RF1S640SM
18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17422.
Features
• 18A, 200V
•r
DS(ON) = 0.180Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
IRF640 TO-220AB IRF640
RF1S640SM TO-263AB RF1S640
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the T O-263AB v ariant in the tape and reel, i.e., RF1S640SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet June 1999
4-209
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF640, RF1S640SM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 200 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID18
11 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 72 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD125 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 580 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) 200 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 18 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 1) rDS(ON) ID = 10A, VGS = 10V (Figures 8, 9) - 0.14 0.18 Ω
Forward Transconductance (Note 1) gfs VDS ≥ 10V, ID = 11A (Figure 12) 6.7 10 - S
Turn-On Delay Time td(ON) VDD = 100V, ID≈18A, RGS = 9.1Ω, RL = 5.4Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1321ns
Rise Time tr-5077ns
Turn-Off Delay Time td(OFF) -4668ns
Fall Time tf-3554ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID≈ 18A, VDS = 0.8 x Rated BVDSS
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
IG(REF) = 1.5mA
-4364nC
Gate to Source Charge Qgs -8-nC
Gate to Drain “Miller” Charge Qgd -22- nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF
Output Capacitance COSS - 400 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Internal Drain Inductance LDMeasured From the
Contact Screw on Tab to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC --1
oC/W
Thermal Resistance Junction to
Ambient RθJA Free Air Operation, IRF640 - - 62 oC/W
RθJA RF1S640SM Mounted on FR-4 Board with
Minimum Mounting Pad --62
oC/W
LS
LD
G
D
S
IRF640, RF1S640SM
4-210
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
- - 18 A
Pulse Source to Drain Current
(Note 2) ISDM - - 72 A
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13) - - 2.0 V
Reverse Recovery Time trr TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 120 240 530 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 1.3 2.8 5.6 µC
NOTES:
2. Pulse Test: Pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ= 25oC, L = 3.37mH, RG= 25Ω, peak IAS = 18A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
8
4
025 50 75 100 125 150
16
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
20
12
tP, RECTANGULAR PULSE DURATION (s) 10
ZθJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)
10-3 10-2 10-1 1
10-5 10-4
10
0.01
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
PDM
t1
t2
0.001
1
SINGLE PULSE
0.1
0.02
0.2
0.5
0.01
0.05
IRF640, RF1S640SM
4-211
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
10
1
10
1
ID, DRAIN CURRENT (A)
100
100
TC = 25oC
SINGLE PULSE
1000 OPERATION IN THIS AREA MAY BE
LIMITED BY rDS(ON)
DC
100µs
10µs
1ms
10ms
TC = 25oC
1000
TJ = MAX RATED
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
0012243648
6
12
18
24
30
60
7V
6V
5V
4V
10V
8V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
6
01.0 2.0 3.0 5.0
12
18
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 6V
24
4.0
VGS = 7V
30 VGS = 8V
VGS = 10V
VGS = 5V
VGS = 4V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0468102
0.1
1
10
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
100
150oC
25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥50V
0
0.6
0.9
1.2
15 30 45 60
rDS(ON), DRAIN TO SOURCE
ID, DRAIN CURRENT (A)
75
1.5
0
0.3 VGS= 10V
VGS = 20V
ON RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED DRAIN TO SOURCE
3.0
1.8
1.2
0.6
0
-60 -40 -20 0 20 40 60
TJ, JUNCTION TEMPERATURE (oC)
100 120 140 160
2.4
80
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 18A
IRF640, RF1S640SM
4-212
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
1.25
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
100 120 140 160
1.15
80
ID = 250µA3000
600
0110 100
C, CAPACITANCE (pF)
1800
VDS, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
CISS
COSS
CRSS
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
VGS = 0V, f = 1MHz
25oC
ID, DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE (S)
00 6 12 18 24
3
6
9
12
15
30
150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
00.8 1.2 1.6 2.00.4
1
10
100
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
1000
25oC
150oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
Qg, GATE CHARGE (nC)
VGS, GATE TO SOURCE VOLTAGE (V)
0015304560
4
8
12
16
20
75
ID = 28A
VDS = 100V
VDS = 160V
VDS = 40V
IRF640, RF1S640SM
4-213
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF640, RF1S640SM
4-214
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see w eb site http://www.intersil.com
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TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
IRF640, RF1S640SM
