kwa SGS-THOMSON BCW60 7 MICROELECTRONICS BCX70 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW60A AA BCW60B AB BCWes60C AC BCX70G AG BCX70H AH BCX70J AJ a SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS a LOWLEVELAF AMPLIFICATION AND SWITCHING NPN COMPLEMENTS ARE RESPECTIVELY BCW61 AND BCX71 INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B EO (3) Sc06960 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCW60 BCX70 Voces Collector-Emitter Voltage (Vee = 0) -32 -45 Vv Vceo |Collector-Emitter Voltage (Ig = 0) -32 -45 Vv Veso | Emitter-Base Voltage (Ic = 0) -5 Vv Ic Collector Current -0.2 A Ip Base Current -0.05 A Ptot | Total Dissipation at Tc = 25 C 310 mw Tstg _|Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C March 1996 V5 Me 742923? 0078010 031BCW60/BCX70 THERMAL DATA Rinj-amb |Thermal Resistance Junction-Ambient Max 450 C/W Rinj-srR | Thermal Resistance Junction-Substrate Max 320 C/W * Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm* ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Ices Collector Cut-off Vce = Rated Vces 20 nA Current (Vee = 0) Voce = Rated Vces Tamb = 150 C 20 WA lEBO Collector Cut-off Vep=4V 20 nA Current (le = 0) Visryceo* | Collector-Emitter ic =2 mA Breakdown Voltage for BCW60 32 Vv (Ip = 0) for BCX70 45 Vv Vierjyeso | Emitter-Base lo =1pHA 5 Vv Breakdown Voltage (ic = 0) Vce(sat)* | Collector-Emitter lc=10 mA 1!8=0.25 mA 0.35 Vv Saturation Voltage Ic =50 mA Ig = 1.25 mA 0.55 Vv Veg(saty* |Collector-Base Ic=10mA Ip =0.25 MA 0.85 Vv Saturation Voltage lc=50mA_ lg =1.25 mA 1.05 Vv Vee(on) |Collector-Base On Ic =2mA Vce = 5 V 0.55 0.75 Vv Voltage hee* DC Current Gain lc = 0.01 MA Vcr =5V for group A, G 80 for group B, H 20 145 for group C, J 40 220 lc=2mMA VcE =5V for group A, G 120 220 for group B, H 180 310 for group C, J 250 460 Io = 50 mA VceE=1V for group A, G 50 for group B, H 70 for group C, J 90 ft Transition Frequency lo = 10 MA Vce = 5V f= 100 MHz 125 MHz Ccp Collector Base le =0 Vcp =10V f=1MHz 4.5 pF Capacitance Cea Emitter Base Ic =0 VceE=0.5V f=1MHz 8 pF Capacitance NF Noise Figure VcE=5V Ic =0.2 mA f = 1KHz 2 6 dB Af = 200 Hz Re =2KQ hie Input Impedance Voce =5V Ilc=2mA_ f=1KHz for group A, G 1.6 2.7 4.5 KQ for group B, H 2.5 3.6 6 KQ for group C, J 3.2 4.5 8.5 KQ Nre Reverse Voltage Ratio |Vce =5 V Ic =2mA_ f=1KHz for group A, G 1.5 10% for group B, H 2 107 for group C, J 2 10% * Pulsed: Pulse duration = 300 ps, duty cycle < 2% 2/5 {a7 SGS-THOMSON SY7 wacacmactronics Mi 7929237 OO78011 T7hELECTRICAL CHARACTERISTICS (Continued) BCW60/BCX70 Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit hte Small Signal Current VceE=5V Ic=2mA_ f= 1KHz Gain for group A, G 200 for group B, H 260 for group C, J 330 Noe Output Admittance VcE=5V Io=2mA = 1KHz for group A, G 18 30 ps for group B, H 24 50 BS for group C, J 30 60 ps ta Delay Time lc = 10 MA Iai = Ip2 = IMA 35 ns - ; Vep=3.6V Ri=R2=5KQ tr Rise Time Ri = 990 2 50 ns ton Switching On Time 85 150 ns ts Storage Time 400 ns te Fall Time 80 ns tort Switching Off Time 480 800 ns * Pulsed: Pulse duration = 300 1s, duty cycle < 2% 3/5 A397 Scaouscmones MB 7929237 007801c 304BCW60/BCX70 SOT-23 MECHANICAL DATA mm mils DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 0.85 14 33.4 43.3 B 0.65 0.95 25.6 37.4 Cc 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 24 25 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 oO 0.09 0.17 3.5 6.7 F A E i 9 ~ a} t M dj 1 2 o 3 % SL | B de D 0044616/B e 7 8S8-THomson SY yacnomucmonics Me 7929237 0078013 640