PHOTOCOUPLER
PS2533-1,PS2533L-1
HIGH COLLECTOR TO EMITTER VOLTATGE
HIGH ISOLATION VOLTAGE
MULTI PHOTOCOUPLER SIRIES
NEPOC Series
DESCRIPTION
The PS2533-1 and PS2533L-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington connected phototransistor.
The PS2533-1 is in a plastic DIP (Dual In-line Package) and the PS2533L-1 is lead bending type (Gull-wing) for
surface mount.
FEATURES
High collector to emitter voltage (VCEO = 350 V)
High Isolation voltage (BV = 5 000 Vr.m.s.)
High current transfer ratio (CTR = 4 000% TYP.)
High-speed switching (tr, tf = 100
μ
s TYP.)
Ordering number of tape product: PS2533L-1-E3, E4, F3, F4
• Safety standards
UL approved: File No. E72422
BSI approved: No. 8221/8222
CSA approved: No. CA 101391
NEMKO approved: No. P98101708
SEMKO approved: No. 0143092/01-02
DEMKO approved: No. 307863
FIMKO approved: No. FI 17640
DIN EN60747-5-2 (VDE0884 Part2) approved (Option)
APPLICATIONS
Telephone, Exchange equipment
• FAX/MODEM
The mark shows major revised points.
Document No. PN10233EJ02V0DS (2nd edition)
Date Published March 2006 CP(K)
©
NEC Compound Semiconductor Devices, Ltd. 1990, 2006
PS2533-1,PS2533L-1
PACKAGE DIMENSIONS (Unit : mm)
DIP Type (New package)
PS2533-1TOP VIEW
3.5±0.3
4.15±0.43.2±0.4
2.54
1.25±0.15 0.50±0.10
0.25
M
4.6±0.35
6.5±0.5
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
DIP Type
PS2533-1TOP VIEW
4.6±0.5
6.5±0.5
3.5±0.3
4.15±0.43.3±0.5
2.54
1.25±0.15 0.50±0.10
0.25
M
0 to 15˚
7.62
0.25
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Data Sheet PN10233EJ02V0DS
2
PS2533-1,PS2533L-1
Lead Bending Type (New package)
PS2533L-1
TOP VIEW
0.25
M
4.6±0.35
6.5±0.5
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Lead Bending Type
PS2533L-1
TOP VIEW
4.6±0.5
6.5±0.5
0.25
M
3.5±0.3
2.54
1.25±0.15
0.15
0.9±0.25
9.60±0.4
0.25
+0.1
–0.05
0.1
+0.1
–0.05
12
431. Anode
2. Cathode
3. Emitter
4. Collector
Data Sheet PN10233EJ02V0DS 3
PS2533-1,PS2533L-1
MARKING EXAMPLE
2533
NL601
J
N
Assembly Lot
Week Assembled
Year Assembled
(Last 1 Digit)
In-house Code
CTR Rank Code
No. 1 pin
Mark
Package
New PKG
Standard PKG
Made in Japan Made in Taiwan
N601
L
L
Data Sheet PN10233EJ02V0DS
4
PS2533-1,PS2533L-1
ORDERING INFORMATION
Part Number Order Number Solder Plating
Specification Packing Style Safety Standard
Approval Application Part
Number*1
PS2533-1 PS2533-1-A Pb-Free Magazine case 100 pcs Standard products PS2533-1
PS2533L-1 PS2533L-1-A (UL, CSA, BSI,
PS2533L-1-E3 PS2533L-1-E3-A Embossed Tape 1 000 pcs/reel NEMKO, SEMKO,
PS2533L-1-E4 PS2533L-1-E4-A DEMKO, FIMKO
PS2533L-1-F3 PS2533L-1-F3-A Embossed Tape 2 000 pcs/reel approved)
PS2533L-1-F4 PS2533L-1-F4-A
PS2533-1-V PS2533-1-V-A Magazine case 100 pcs DIN EN60747-5-2
PS2533L-1-V PS2533L-1-V-A (VDE0884 Part2)
PS2533L-1-V-E3 PS2533L-1-V-E3-A Embossed Tape 1 000 pcs/reel Approved (Option)
PS2533L-1-V-E4 PS2533L-1-V-E4-A
PS2533L-1-V-F3 PS2533L-1-V-F3-A Embossed Tape 2 000 pcs/reel
PS2533L-1-V-F4 PS2533L-1-V-F4-A
*1 For the application of the Safety Standard, following part number should be used.
Data Sheet PN10233EJ02V0DS 5
PS2533-1,PS2533L-1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Forward Current (DC) IF 80 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
Δ
PD/°C 1.5 mW°C
Power Dissipation PD 150 mW
Peak Forward Current *1 IFP 1 A
Transistor Collector to Emitter Voltage VCEO 350 V
Emitter to Collector Voltage VECO 0.6 V
Collector Current IC 150 mA
Power Dissipation Derating
Δ
PC/°C 3.0 mW/°C
Power Dissipation PC 300 mW
Isolation Voltage*2 BV 5 000 Vr.m.s.
Operating Ambient Temperature TA 55 to +100 °C
Storage Temperature Tstg 55 to +150 °C
*1 PW = 100
μ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at TA = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10233EJ02V0DS
6
PS2533-1,PS2533L-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.15 1.40 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 30 pF
Transistor Collector to Emitter
Dark Current ICEO VCE = 350 V, IF = 0 mA 400 nA
Coupled Current Transfer Ratio
(IC/IF) CTR IF = 1 mA, VCE = 2 V 1 500 4 000 6 500 %
Collector Saturation
Voltage VCE(sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 1011 Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.6 pF
Rise Time*1 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 100
μ
s
Fall Time *1 tf 100
*1 Test circuit for switching time
(PW = 1 ms,
Duty cycle = 1/10)
Pulse input V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
Data Sheet PN10233EJ02V0DS 7
PS2533-1,PS2533L-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
1.5 mW/˚C
150
100
50
0 25 50 75 100 125 150
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
3.0 mW/˚C
400
300
200
100
0 25 50 75 100 125 150
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
100
10
1
0.1
0.01
0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
I
F
= 0.5 mA
1.0 mA
1.5 mA
2.0 mA
2.5 mA
3.0 mA
3.5 mA
4.0 mA
5.0 mA
4.5 mA
160
140
120
100
80
60
40
20
021 3456 87
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
= 350 V
–50 –25 0 25 50 75 100
100 n
10 n
1 n
100 p
10
μ
1
μ
Ambient Temperature T
A
(˚C)
Collector to Emitter Dark Current I
CEO
(A)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
I
F
= 5.0 mA
2.0 mA
1.0 mA
0.5 mA
500
100
10
50
1
5
0.1
0.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Collector Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Remark The graphs indicate nominal characteristics.
Data Sheet PN10233EJ02V0DS
8
PS2533-1,PS2533L-1
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
1.2
1.0
0.8
0.6
0.4
0.2
0.010 102103104105106
IF = 1 mA,
TA = 25 ˚C
IF = 1 mA,
TA = 60 ˚C
FREQUENCY RESPONSE
Frequency f (kHz)
Normalized Gain Gv
5
0
–10
–5
–15
–20
–25
–30
0.01 0.1 1 10 100
RL = 1 kΩ100 Ω10 Ω
VCE = 4 V, Vin = 0.1 Vp-p
RL
Vin Vout
1 kΩ
47 Ω
1
F
μ
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
;;;;;;;;;;;;;;;;
Normalized to 1.0
at TA = 25 ˚C,
IF = 1 mA, VCE = 2 V
1.2
0.8
0.4
0.0
1.0
0.6
0.2
–50 –25 25 50 75 1000
Ambient Temperature TA (˚C)
Normalized Current Transfer Ratio CTR
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
VCE = 2 V
Sample A
B
5 000
4 000
3 000
1 000
0
2 000
15100.1 0.5 15
Forward Current IF (mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
VCC = 10 V,
IC = 10 mA tr
td
ts
tf
500
100
50
10
1
5
20 100 200 500 1 k 2 k50
Load Resistance RL (Ω)
Switching Time t ( s)
μ
SWITCHING TIME vs.
LOAD RESISTANCE
Remark The graphs indicate nominal characteristics.
Data Sheet PN10233EJ02V0DS 9
PS2533-1,PS2533L-1
TAPING SPECIFICATIONS (Unit : mm)
Tape Direction
Outline and Dimensions (Tape)
Outline and Dimensions (Reel)
PS2533L-1-E3 PS2533L-1-E4
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
φ
Packing: 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
254±2.0
80.0±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10233EJ02V0DS
10
PS2533-1,PS2533L-1
Tape Direction
PS2533L-1-F3 PS2533L-1-F4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1
1.75±0.1
4.5 MAX.
4.0±0.1
0.4
5.3±0.1
8.0±0.1
7.5±0.1
16.0±0.3
10.3±0.1
1.5
+0.1
–0
Outline and Dimensions (Reel)
Packing: 2 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
100±1.0
2.0±0.5
φ
φ
15.9 to 19.4
Outer edge of
flange
21.5±1.0
17.5±1.0
Data Sheet PN10233EJ02V0DS 11
PS2533-1,PS2533L-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
Peak reflow temperature 260°C or below (package surface temperature)
T ime of peak reflow temperature 10 seconds or less
T ime of temperature higher than 220°C 60 seconds or less
T ime to preheat temperature from 120 to 180°C 120±30 s
Number of reflows Three
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
Number of times One (Allowed to be dipped in solder including plastic mold portion.)
Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Soldering by soldering iron
Peak temperature (lead part temperature) 350°C or below
Time (each pins) 3 seconds or less
Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
(a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead.
(b) Please be sure that the temperature of the package would not be heated over 100°C.
Data Sheet PN10233EJ02V0DS
12
PS2533-1,PS2533L-1
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute
maximum ratings.
3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler
Check the setting values before use, since the forward current conditions at CTR measurement differ according
to product.
When using products other than at the specified forward current, the characteristics curves may differ from the
standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual
operating conditions and thoroughly take variations or the like into consideration before use.
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10233EJ02V0DS 13
PS2533-1,PS2533L-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application classification (DIN VDE 0109)
for rated line voltages 300 Vr.m.s.
for rated line voltages 600 Vr.m.s.
IV
III
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength
maximum operating isolation voltage
Test voltage (partial discharge test, procedure a for type test and random test)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
890
1 068
Vpeak
Vpeak
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 424 Vpeak
Highest permissible overvoltage UTR 8 000 Vpeak
Degree of pollution (DIN VDE 0109) 2
Clearance distance > 7.0 mm
Creepage distance > 7.0 mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range Tstg 55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25°C
VIO = 500 V dc at TA MAX. at least 100°C
Ris MIN.
Ris MIN.
1012
1011
Ω
Ω
Safety maximum ratings (maximum permissible in case of fault, see thermal
derating curve)
Package temperature
Current (input current IF, Psi = 0)
Power (output or total power dissipation)
Isolation resistance
VIO = 500 V dc at TA = 175°C (Tsi)
Tsi
Isi
Psi
Ris MIN.
175
400
700
109
°C
mA
mW
Ω
Data Sheet PN10233EJ02V0DS
14
PS2533-1,PS2533L-1
APPLICATION FOR TELEPHONE (EXAMPLE)
LINE
Bell Ringing Signal
(75 Vr.m.s., 16 Hz) PS2505/PS2506
PS2705/PS2707
PS2805
etc. Bell Ringing Detect V
CC
V
CC
Line Observe
Dial Pulse PS2532/PS2533/PS2535
Generator PS2732/PS2733
PS2832/PS2833
PS2521
PS2525
Dialer Circuit
IN
OUT
CPU
OCMOS FET
PS7xxx
Speech Circuit
Data Sheet PN10233EJ02V0DS 15
Data Sheet PN10233EJ02V0DS
16
PS2533-1,PS2533L-1
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
M8E 00. 4 - 0110
The information in this document is current as of March, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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Descriptions of circuits, software and other related information in this document are provided for illustrative
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Customers must check the quality grade of each semiconductor product before using it in a particular
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support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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(Note)
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and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)
Hong Kong Head Office
Taipei Branch Office
Korea Branch Office
TEL: +852-3107-7303
TEL: +886-2-8712-0478
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TEL: +1-408-988-3500 FAX: +1-408-988-0279
0504
NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/
E-mail: salesinfo@ml.ncsd.necel.com (sales and general)
techinfo@ml.ncsd.necel.com (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
For further information, please contact
PS2533-1,PS2533L-1
Caution GaAs Products This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium < 100 PPM Not Detected
Hexavalent Chromium < 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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