AIKW50N60CT TRENCHSTOPTMSeries LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryantiparallelEmitterControlleddiode Features: C *AutomotiveAEC-Q101qualified *DesignedforDC/ACconvertersforAutomotiveApplication *VerylowVCE(sat)1.5V(typ.) *Maximumjunctiontemperature175C *Dynamicallystresstested *Shortcircuitwithstandtime5s *100%shortcircuittested *100%ofthepartsaredynamicallytested *PositivetemperaturecoefficientinVCE(sat) *LowEMI *LowgatechargeQG *Greenpackage *Verysoft,fastrecoveryantiparallelEmitterControlledHE diode *TRENCHSTOPTMandFieldstoptechnologyfor600V applicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -veryhighswitchingspeed G E G C Applications: E *Maininverter *Climatecompressor *PTCheater *Motordrives KeyPerformanceandPackageParameters Type AIKW50N60CT Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 600V 50A 1.5V 175C AK50DCT PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries MaximumRatings Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25Cvaluelimitedbybondwire TC=100C IC 80.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A Turn off safe operating area VCE600V,Tvj175C,tp=1s - 150.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25Cvaluelimitedbybondwire TC=100C IF 80.0 50.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A Gate-emitter voltage VGE 20 V Short circuit withstand time VGE=15.0V,VCC400V Allowed number of short circuits < 1000 Time between short circuits: 1.0s Tvj=150C tSC PowerdissipationTC=25C Ptot 333.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C s 5 1) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance,2) junction - case Rth(j-c) - - 0.45 K/W Diode thermal resistance,2) junction - case Rth(j-c) - - 0.80 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W 1) 2) Package not recommended for surface mount application Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. Datasheet 3 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=50.0A Tvj=25C Tvj=175C - 1.50 1.90 2.00 - V - 1.65 1.60 2.05 - V 4.1 4.9 5.7 V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=50.0A Tvj=25C Tvj=175C Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25C Tvj=175C - 1250 40 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 31.0 - S ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3140 - - 200 - - 93 - VCC=480V,IC=20.0A, VGE=15V - 310.0 - nC VGE=15.0V,VCC400V, tSC5s Tvj=150C - - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: 1.0s VCE=25V,VGE=0V,f=1MHz 458 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 26 - ns - 29 - ns - 299 - ns - 29 - ns - 1.20 - mJ - 1.40 - mJ - 2.60 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=7.0,RG(off)=7.0, L=103nH,C=39pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries DiodeCharacteristic,atTvj=25C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25C, VR=400V, IF=50.0A, diF/dt=1280A/s dirr/dt - 143 - ns - 1.80 - C - 27.7 - A - -671 - A/s SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 27 - ns - 33 - ns - 341 - ns - 55 - ns - 1.80 - mJ - 1.85 - mJ - 3.65 - mJ - 205 - ns - 4.30 - C - 40.7 - A - -449 - A/s IGBTCharacteristic,atTvj=175C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=7.0,RG(off)=7.0, L=103nH,C=39pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. DiodeCharacteristic,atTvj=175C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet Tvj=175C, VR=400V, IF=50.0A, diF/dt=1280A/s dirr/dt 5 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 350 90 80 300 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 70 250 200 150 100 60 50 40 30 20 50 0 10 25 50 75 100 125 150 0 175 25 50 TC,CASETEMPERATURE[C] Figure 1. Powerdissipationasafunctionofcase temperature (Tj175C) 125 150 175 150 VGE=20V 135 VGE=20V 135 15V 13V 120 11V 105 9V 7V 90 75 60 45 105 60 45 15 1.5 2.0 2.5 3.0 0 3.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tj=25C) Datasheet 7V 75 15 1.0 9V 90 30 0.5 13V 11V 30 0.0 15V 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE15V,Tj175C) 150 0 75 TC,CASETEMPERATURE[C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 4. Typicaloutputcharacteristic (Tj=175C) 6 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 100 3.0 Tvj = 25C Tvj = 175C IC,COLLECTORCURRENT[A] 80 70 60 50 40 30 20 10 0 2 3 4 5 6 7 8 9 IC = 25A IC = 50A IC = 100A 2.7 VCE(sat),COLLECTOR-EMITTERSATURATION[V] 90 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 10 25 VGE,GATE-EMITTERVOLTAGE[V] 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 5. Typicaltransfercharacteristic (VCE=20V) Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 1 0 20 40 60 80 100 10 100 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tj=175C,VCE=400V, VGE=0/15V,RG=7,Dynamictestcircuitin Figure E) Datasheet 0 5 10 15 20 25 30 RG,GATERESISTOR[] Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tj=175C,VCE=400V, VGE=0/15V,IC=50A,Dynamictestcircuitin Figure E) 7 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 1000 7 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 25 50 75 100 125 150 typ. min. max. 6 5 4 3 2 1 0 175 25 Tj,JUNCTIONTEMPERATURE[C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG=7,DynamictestcircuitinFigure E) 75 100 125 150 175 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,8mA) 10 7 Eoff Eon Ets 9 Eoff Eon Ets 6 8 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 50 Tj,JUNCTIONTEMPERATURE[C] 7 6 5 4 3 2 5 4 3 2 1 1 0 0 20 40 60 80 0 100 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tj=175C,VCE=400V, VGE=0/15V,RG=7,Dynamictestcircuitin Figure E) Datasheet 0 5 10 15 20 25 30 RG,GATERESISTOR[] Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tj=175C,VCE=400V, VGE=0/15V,IC=50A,Dynamictestcircuitin Figure E) 8 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 4.0 6 Eoff Eon Ets 3.5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 5 3.0 2.5 2.0 1.5 1.0 4 3 2 1 0.5 0.0 25 50 75 100 125 150 0 300 175 Tj,JUNCTIONTEMPERATURE[C] 325 350 375 400 425 450 475 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG=7,Dynamictestcircuitin Figure E) Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tj=175C,VGE=0/15V, IC=50A,RG=7,Dynamictestcircuitin Figure E) 20 VCC=120V VCC=480V 18 Cies Coes Cres 1E+4 14 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 16 12 10 8 1000 6 100 4 2 0 0 50 100 150 200 250 300 350 10 400 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=50A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 14 800 12 tSC,SHORTCIRCUITWITHSTANDTIME[s] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 900 700 600 500 400 300 200 10 8 6 4 2 100 0 12 13 14 15 16 17 18 19 0 20 10 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE400V,startatTj150C) 12 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 15 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 7.0E-3 0.03736 0.09205 0.12996 0.18355 i[s]: 4.5E-5 1.0E-4 7.2E-4 8.3E-3 0.07425 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.1879 0.1673 0.2007 0.2441 i[s]: 4.8E-5 6.4E-4 7.3E-3 0.07037 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) Datasheet 14 1 0.1 0.001 1E-6 13 Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE=400V,startatTj=25C,Tjmax150C) 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 11 VGE,GATE-EMITTERVOLTAGE[V] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidthfordifferentduty cyclesD (D=tp/T) 10 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 350 6 Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A 5 Qrr,REVERSERECOVERYCHARGE[C] trr,REVERSERECOVERYTIME[ns] 300 250 200 150 100 4 3 2 1 50 0 900 1000 1100 1200 1300 1400 0 900 1500 diF/dt,DIODECURRENTSLOPE[A/s] Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 1100 1200 1300 1400 1500 Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) 50 45 1000 diF/dt,DIODECURRENTSLOPE[A/s] -200 Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A Tvj = 25C, IF = 50A Tvj = 175C, IF = 50A dIrr/dt,diodepeakrateoffallofIrr[A/s] Irr,REVERSERECOVERYCURRENT[A] -300 40 35 30 25 20 15 10 -400 -500 -600 -700 -800 5 0 900 1000 1100 1200 1300 1400 1500 -900 900 diF/dt,DIODECURRENTSLOPE[A/s] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V,DynamictestcircuitinFigureE) Datasheet 1000 1100 1200 1300 1400 1500 diF/dt,DIODECURRENTSLOPE[A/s] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V,DynamictestcircuitinFigureE) 11 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries 150 2.50 Tvj = 25C Tvj = 175C 135 IF = 25A IF = 50A IF = 100A 2.25 120 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 2.00 105 90 75 60 45 1.75 1.50 1.25 1.00 30 0.75 15 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.50 VF,FORWARDVOLTAGE[V] Figure 25. Typicaldiodeforwardcurrentasafunction offorwardvoltage Datasheet 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 26. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 12 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries Package Drawing PG-TO247-3 Datasheet 13 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2017-02-09 AIKW50N60CT TRENCHSTOPTMSeries RevisionHistory AIKW50N60CT Revision:2017-02-09,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-02-09 Data sheet created Datasheet 15 V2.1 2017-02-09 TrademarksofInfineonTechnologiesAG HVICTM,IPMTM,PFCTM,AU-ConvertIRTM,AURIXTM,C166TM,CanPAKTM,CIPOSTM,CIPURSETM,CoolDPTM, CoolGaNTM,COOLiRTM,CoolMOSTM,CoolSETTM,CoolSiCTM,DAVETM,DI-POLTM,DirectFETTM,DrBladeTM,EasyPIMTM, EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,GaNpowIRTM, HEXFETTM,HITFETTM,HybridPACKTM,iMOTIONTM,IRAMTM,ISOFACETM,IsoPACKTM,LEDrivIRTM,LITIXTM,MIPAQTM, ModSTACKTM,my-dTM,NovalithICTM,OPTIGATM,OptiMOSTM,ORIGATM,PowIRaudioTM,PowIRStageTM,PrimePACKTM, PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,SmartLEWISTM,SOLIDFLASHTM,SPOCTM, StrongIRFETTM,SupIRBuckTM,TEMPFETTM,TRENCHSTOPTM,TriCoreTM,UHVICTM,XHPTM,XMCTM TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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