Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1
www.infineon.com 2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology
withsoft,fastrecoveryantiparallelEmitterControlleddiode
Features:
•AutomotiveAEC-Q101qualified
•DesignedforDC/ACconvertersforAutomotiveApplication
•VerylowVCE(sat)1.5V(typ.)
•Maximumjunctiontemperature175°C
•Dynamicallystresstested
•Shortcircuitwithstandtime5µs
•100%shortcircuittested
•100%ofthepartsaredynamicallytested
•PositivetemperaturecoefficientinVCE(sat)
•LowEMI
•LowgatechargeQG
•Greenpackage
•Verysoft,fastrecoveryantiparallelEmitterControlledHE
diode
•TRENCHSTOPTMandFieldstoptechnologyfor600V
applicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-veryhighswitchingspeed
Applications:
•Maininverter
•Climatecompressor
•PTCheater
•Motordrives
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
AIKW50N60CT 600V 50A 1.5V 175°C AK50DCT PG-TO247-3
Datasheet 2 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet 3 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
MaximumRatings
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC80.0
50.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 150.0 A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs - 150.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IF80.0
50.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 150.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
5
µs
PowerdissipationTC=25°C Ptot 333.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,1)
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,2)
junction - case Rth(j-c) - - 0.45 K/W
Diode thermal resistance,2)
junction - case Rth(j-c) - - 0.80 K/W
Thermal resistance
junction - ambient Rth(j-a) - - 40 K/W
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet 4 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=175°C
-
-
1.50
1.90
2.00
-
V
Diode forward voltage VF
VGE=0V,IF=50.0A
Tvj=25°C
Tvj=175°C
-
-
1.65
1.60
2.05
-
V
Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 4.9 5.7 V
Zero gate voltage collector current ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
1250
40
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 31.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 3140 -
Output capacitance Coes - 200 -
Reverse transfer capacitance Cres - 93 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=480V,IC=20.0A,
VGE=15V - 310.0 - nC
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-458 - A
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 26 - ns
Rise time tr- 29 - ns
Turn-off delay time td(off) - 299 - ns
Fall time tf- 29 - ns
Turn-on energy Eon - 1.20 - mJ
Turn-off energy Eoff - 1.40 - mJ
Total switching energy Ets - 2.60 - mJ
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=7.0Ω,RG(off)=7.0Ω,
Lσ=103nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 143 - ns
Diode reverse recovery charge Qrr - 1.80 - µC
Diode peak reverse recovery current Irrm - 27.7 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -671 - A/µs
Tvj=25°C,
VR=400V,
IF=50.0A,
diF/dt=1280A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 27 - ns
Rise time tr- 33 - ns
Turn-off delay time td(off) - 341 - ns
Fall time tf- 55 - ns
Turn-on energy Eon - 1.80 - mJ
Turn-off energy Eoff - 1.85 - mJ
Total switching energy Ets - 3.65 - mJ
Tvj=175°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=7.0Ω,RG(off)=7.0Ω,
Lσ=103nH,Cσ=39pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 205 - ns
Diode reverse recovery charge Qrr - 4.30 - µC
Diode peak reverse recovery current Irrm - 40.7 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -449 - A/µs
Tvj=175°C,
VR=400V,
IF=50.0A,
diF/dt=1280A/µs
Datasheet 6 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
80
90
Figure 3. Typicaloutputcharacteristic
(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
15
30
45
60
75
90
105
120
135
150
VGE=20V
15V
13V
11V
9V
7V
Figure 4. Typicaloutputcharacteristic
(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
15
30
45
60
75
90
105
120
135
150
VGE=20V
15V
13V
11V
9V
7V
Datasheet 7 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 5. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
2345678910
0
10
20
30
40
50
60
70
80
90
100
Tvj = 25°C
Tvj = 175°C
Figure 6. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
IC = 25A
IC = 50A
IC = 100A
Figure 7. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tj=175°C,VCE=400V,
VGE=0/15V,RG=7Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 20 40 60 80 100
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 8. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tj=175°C,VCE=400V,
VGE=0/15V,IC=50A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 30
10
100
1000
td(off)
tf
td(on)
tr
Datasheet 8 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RG=7Ω,DynamictestcircuitinFigure
E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
1000
td(off)
tf
td(on)
tr
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,8mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
typ.
min.
max.
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tj=175°C,VCE=400V,
VGE=0/15V,RG=7Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 20 40 60 80 100
0
1
2
3
4
5
6
7
8
9
10
Eoff
Eon
Ets
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tj=175°C,VCE=400V,
VGE=0/15V,IC=50A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
0 5 10 15 20 25 30
0
1
2
3
4
5
6
7
Eoff
Eon
Ets
Datasheet 9 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RG=7Ω,Dynamictestcircuitin
Figure E)
Tj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tj=175°C,VGE=0/15V,
IC=50A,RG=7Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
300 325 350 375 400 425 450 475 500
0
1
2
3
4
5
6
Eoff
Eon
Ets
Figure 15. Typicalgatecharge
(IC=50A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 50 100 150 200 250 300 350 400
0
2
4
6
8
10
12
14
16
18
20
VCC=120V
VCC=480V
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
1E+4
Cies
Coes
Cres
Datasheet 10 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 17. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
12 13 14 15 16 17 18 19 20
0
100
200
300
400
500
600
700
800
900
Figure 18. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE=400V,startatTj=25°C,Tjmax≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 11 12 13 14 15
0
2
4
6
8
10
12
14
Figure 19. IGBTtransientthermalimpedanceasa
functionofpulsewidthfordifferentduty
cyclesD
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
7.0E-3
4.5E-5
2
0.03736
1.0E-4
3
0.09205
7.2E-4
4
0.12996
8.3E-3
5
0.18355
0.07425
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidthfordifferentduty
cyclesD
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.1879
4.8E-5
2
0.1673
6.4E-4
3
0.2007
7.3E-3
4
0.2441
0.07037
Datasheet 11 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 21. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
900 1000 1100 1200 1300 1400 1500
0
50
100
150
200
250
300
350
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Figure 22. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
900 1000 1100 1200 1300 1400 1500
0
1
2
3
4
5
6
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Figure 23. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V,DynamictestcircuitinFigureE)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
900 1000 1100 1200 1300 1400 1500
0
5
10
15
20
25
30
35
40
45
50
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Figure 24. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V,DynamictestcircuitinFigureE)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
900 1000 1100 1200 1300 1400 1500
-900
-800
-700
-600
-500
-400
-300
-200
Tvj = 25°C, IF = 50A
Tvj = 175°C, IF = 50A
Datasheet 12 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Figure 25. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
15
30
45
60
75
90
105
120
135
150
Tvj = 25°C
Tvj = 175°C
Figure 26. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
IF = 25A
IF = 50A
IF = 100A
Datasheet 13 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
Package Drawing PG-TO247-3
Datasheet 14 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 15 V2.1
2017-02-09
AIKW50N60CT
TRENCHSTOPTMSeries
RevisionHistory
AIKW50N60CT
Revision:2017-02-09,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-02-09 Data sheet created
TrademarksofInfineonTechnologiesAG
µHVIC™,µIPM™,µPFC™,AU-ConvertIR™,AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,CoolDP™,
CoolGaN™,COOLiR™,CoolMOS™,CoolSET™,CoolSiC™,DAVE™,DI-POL™,DirectFET™,DrBlade™,EasyPIM™,
EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,GaNpowIR™,
HEXFET™,HITFET™,HybridPACK™,iMOTION™,IRAM™,ISOFACE™,IsoPACK™,LEDrivIR™,LITIX™,MIPAQ™,
ModSTACK™,my-d™,NovalithIC™,OPTIGA™,OptiMOS™,ORIGA™,PowIRaudio™,PowIRStage™,PrimePACK™,
PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,SmartLEWIS™,SOLIDFLASH™,SPOC™,
StrongIRFET™,SupIRBuck™,TEMPFET™,TRENCHSTOP™,TriCore™,UHVIC™,XHP™,XMC™
TrademarksupdatedNovember2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2017.
AllRightsReserved.
ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
InfineonTechnologiesoffice(www.infineon.com).
Warnings
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion
pleasecontactyournearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized
representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea
failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.