1035MP
35 Watts, 50 Volts
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC2 125 Watts Pk
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 2.5 Amps Pk
Maximum Temperatures
Storage Temperature - 65 to + 150oC
Operating Junction Temperature + 200oC
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
POUT Power Out F= 1025-1150 MHz 35 W
PIN Power Input Vcc = 50 Volts 3.5 W
PG Power Gain PW = 10 µsec, DF = 1% 10 10.5 dB
ηc Efficiency 45 %
VSWR Load Mismatch Tolerance F = 1090 MHz 10:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 15mA 65 V
Hfe DC Current Gain Vce = 5V, Ic = 100 mA 20
Cob Output Capacitance Vcb = 50 V, f = 1 MHz 17 20 pF
θjc2 Thermal Resistance 1.4 oC/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Issue December 6, 1995
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
1035MP
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
