Notes through are on page 11
www.irf.com 1
7/01/02
HEXFET® Power MOSFET
VDSS RDS(on) max ID
80V 10mΩ95A
PD- 94504
Absolute Maximum Ratings
lHigh frequency DC-DC converters
lMotor Control
lUninterrutible Power Supplies
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
D2Pak
IRF1312S
TO-220AB
IRF1312 TO-262
IRF1312L
IRF1312
IRF1312S
IRF1312L
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.73
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient (PCB mount)––– 40
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 95
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 67A
IDM Pulsed Drain Current 380
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 210
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.1 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
IRF1312/S/L
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 92 ––– ––– S VDS = 25V, ID = 57A
QgTotal Gate Charge –– – 93 140 ID = 57A
Qgs Gate-to-Source Charge ––– 36 ––– nC VDS = 40V
Qgd Gate-to-Drain ("Miller") Charge ––– 34 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 25 ––– VDD = 40V
trRise Time ––– 130 ––– ID = 57A
td(off) Turn-Off Delay Time ––– 47 ––– RG = 4.5Ω
tfFall Time ––– 51 ––– VGS = 10V
Ciss Input Capacitance ––– 5450 ––– VGS = 0V
Coss Output Capacitance ––– 550 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 340 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1910 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 380 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 620 ––– VGS = 0V, VDS = 0V to 64V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ––– 250 mJ
IAR Avalanche Current––– 57 A
EAR Repetitive Avalanche Energy––– 21 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V T J = 25°C, IS = 57A, VGS = 0V
trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = 57A
Qrr Reverse RecoveryCharge ––– 150 230 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
95
380 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.078 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance – –– 6.6 10 mΩVGS = 10V, ID = 57A
VGS(th) Gate Threshold Voltage 3.5 ––– 5. 5 V VDS = VGS, ID = 250µA
––– ––– 1.0 µA VDS = 76V, VGS = 0V
––– ––– 250 VDS = 64V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
IGSS
IDSS Drain-to-Source Leakage Current
IRF1312/S/L
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain-to-S ource V oltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V 20µs P ULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
B O TT OM 5. 0V
0.1 110 100
VDS, Drain-to-S ource V ol t age (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
5.0V
20µs PU LSE WID TH
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
5.5V
B O TT OM 5. 0V
5678910
VGS, Gate-to-Source Voltage (V )
0.01
0.10
1.00
10.00
100.00
1000.00
ID, Drain-to-Source Current ( A)
TJ = 25°C
TJ = 175°C
VDS = 25V
20µs PU LSE WID TH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 95A
VGS = 10V
IRF1312/S/L
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100 1000
VDS , Drai n-toSource Volt age (V )
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
S i ngle Puls e
1msec
10msec
OPERATION IN THIS ARE A
LIMITED BY RDS(on)
100µsec
0 40 80 120 160 200
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 6 4V
VDS= 40V
VDS= 16V
ID= 57A
FOR TES T CIRCUIT
SEE F IGURE 13
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-toDrai n Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
110 100
VDS, Dr ain-to- Source Voltage (V )
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + C gd
IRF1312/S/L
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
VDS
90%
10%
VGS t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
TC , Case Temperature (° C)
0
20
40
60
80
100
ID , Drain Current (A)
LIMITED BY PACKAGE
IRF1312/S/L
6www.irf.com
QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150 175
0
100
200
300
400
500
E , Single Pulse Avalanche Energy (mJ)
AS
ID
TOP
BOTTOM
23A
40A
57A
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Starting TJ, Junction Temperature (°C)
IRF1312/S/L
www.irf.com 7
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For N-channel HEXFET® power MOSFETs
IRF1312/S/L
8www.irf.com
L EAD AS S I GN M E N TS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (. 022)
0.46 (. 018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149 )
3.54 (.139 )
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055 )
1.15 (.045 )
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTL INE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIM ENSION : IN CH 4 HEATSINK & LEAD MEASUREMENTS DO NO T INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
EXAMPLE:THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
IRF1312/S/L
www.irf.com 9
D2Pak Package Outline
D2Pak Part Marking Information
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
IRF1312/S/L
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
EXAMPLE:THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLY
PART NUMBE
R
DATE CODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"LOGO
RECTIFIER
INTERNATIONAL
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
IRF1312/S/L
www.irf.com 11
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 57A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.15mH
RG = 25Ω, IAS = 57A. (See Figure 12)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
This is only applied to TO-220AB package
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/02
D2Pak Tape & Reel Information
3
4
4
TRR
FEED DIRE CT ION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532 )
12.80 (.504 )
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362 )
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
TO-220AB package is not recommended for Surface Mount Application
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
