ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1700 V
IC= 225 A
Doc. No. 5SYA1537-01 Jan. 04
·Low-loss, rugged IGBT SPT chip-set
·EMC friendly switching
characteristics
·Low profile compact baseless
package for good power cycling
·Suitable for snap-on gate-driver
connection
·Integrated PTC substrate
temperature sensor
·Aluminium nitride substrate for low
thermal resistance
Maximum rated values 1) 2)
Parameter Symbol Conditions min max Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ³ 25 °C 1700 V
DC collector current ICTh = 85 °C 225 A
Peak collector current ICM tp = 1 ms, Th = 85 °C 450 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Th = 25 °C, per switch (IGBT) 1250 W
DC forward current IF225 A
Peak forward current IFM 450 A
Surge current IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 2700 A
IGBT short circuit SOA tpsc
VCC = 1300 V, VCEM CHIP £ 1700 V
VGE £ 15 V, Tvj £ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 4000 V
Junction temperature Tvj 150 °C
Case operating temperature Tc(op) -40 125 °C
Storage temperature Tstg -40 125 °C
M1Base-heatsink, M5 screws 2 3
Mounting torques M2Main terminals, M6 screws 4 6 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur
IGBT Module LoPak5 SPT
5SNS 0225U172100
PRELIMINARY
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 2 of 9
IGBT characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Collector (-emitter)
breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 V
Tvj = 25 °C 2.30 2.70 V
Collector-emitter 3)
saturation voltage VCE sat IC = 225 A, VGE = 15 V Tvj = 125 °C 2.60 V
Tvj = 25 °C 1.5 mA
Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Tvj = 125 °C 15 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500 500 nA
Gate-emitter threshold voltage VGE(TO) IC = 30 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge
IC = 225 A, VCE = 900 V,
VGE = -15 V .. 15 V 1890 nC
Input capacitance Cies 20.7
Output capacitance Coes 1.45
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
0.87
nF
Tvj = 25 °C 135
Turn-on delay time td(on) Tvj = 125 °C 180 ns
Tvj = 25 °C 100
Rise time tr
VCC = 900 V,
IC = 225 A,
RG = 5.6 W,
VGE = ±15 V,
Ls = 55 nH, inductive load Tvj = 125 °C 110 ns
Tvj = 25 °C 515
Turn-off delay time td(off) Tvj = 125 °C 600 ns
Tvj = 25 °C 65
Fall time tf
VCC = 900 V,
IC = 225 A,
RG = 5.6 W,
VGE = ±15 V,
Ls = 55 nH, inductive load Tvj = 125 °C 110 ns
Tvj = 25 °C 50
Turn-on switching energy Eon
VCC = 900 V, IC = 225 A,
VGE = ±15, RG = 5.6 W,
Ls = 55 nH, inductive load Tvj = 125 °C 70
mJ
Tvj = 25 °C 37
Turn-off switching energy Eoff
VCC = 900 V, IC = 225 A,
VGE = ±15, RG = 5.6 W,
Ls = 55 nH, inductive load Tvj = 125 °C 60
mJ
Short circuit current ISC
tpsc 10 µs, VGE = 15 V, Tvj = 125 °C,
VCC = 1300 V, VCEM CHIP 1700 V 1050 A
Module stray inductance
plus to minus Ls DC 20 nH
Th = 25 °C 0.9
Resistance, terminal-chip RCC’+EE’ Th = 125 °C 1.1 m
3) Collector emitter saturation voltage is given at chip level
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 3 of 9
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C 2.00 2.30
Continous forward voltage 4) VFIF = 225 A Tvj = 125 °C 2.05 V
Tvj = 25 °C 175
Peak reverse recovery
current Irr Tvj = 125 °C 200 A
Tvj = 25 °C 28
Recovered charge Qrr Tvj = 125 °C 58 µC
Tvj = 25 °C 300
Reverse recovery time trr Tvj = 125 °C 600 ns
Tvj = 25 °C 14
Reverse recovery energy Erec
VCC = 900 V,
IF = 225 A,
VGE = ±15 V,
RG = 5.6 W
Ls = 55 nH
inductive load
Tvj = 125 °C 30 mJ
2) Maximum rated and characteristic values according to IEC 60747-9
4) Forward voltage is given at chip level
Thermal properties
Parameter Symbol Conditions min typ max Unit
IGBT thermal resistance 5)
junction to heatsink Rth(j-h)IGBT 0.12 K/W
Diode thermal resistance 5)
junction to heatsink Rth(j-h)DIODE
Heatsink: flatness < ±50 µm,
roughness < 6 µm without ridge
Thermal grease: conductivity ³ 0.8 W/mK,
thickness 30 µm < t < 50 µm 0.23 K/W
Temperature sensor PTC RT = RT0 exp [B (1/T - 1/T0)]
RT0 = 1k (±3%), B = -760 K (±2%), T0 = 298 K
Mechanical properties
Parameter Symbol Conditions min typ max Unit
Dimensions L x W x H Typical , see outline drawing 184.5 x 106.5 x 34.5 mm
Term. to base: 9.5
Clearance distance DC
according to IEC 60664-1
and EN 50124-1 Term. to term: 11 mm
Term. to base: 9.5
Surface creepage distance DSC
according to IEC 60664-1
and EN 50124-1 Term. to term: 12.5 mm
Weight 485 gr
PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep
Mounting 5)
Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm
5) For detailed mounting instructions refer to ABB Document No. 5SYA 2017
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 4 of 9
Electrical configuration
Outline drawing
Note: all dimensions are shown in mm
For mounting instructions refer to ABB document No. 5SYA 2017
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 5 of 9
0
50
100
150
200
250
300
350
400
450
0123456
VCE [V]
I
C
[A]
Tvj = 25 °C
9V
11V
13V
15V
17V
0
50
100
150
200
250
300
350
400
450
0123456
VCE [V]
I
C
[A]
Tvj = 125 °C
9V
11V
13V
15V
17V
Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level
0
50
100
150
200
250
300
350
400
450
0123456789101112
VGE [V]
I
C
[A]
125 °C
25 °C
VGE = 25 V
0
0.5
1
1.5
2
2.5
0 500 1000 1500 2000
VCE [V]
I
C pulse
/ I
C
Chip
Power terminals
VGE = ±15 V, RG = 5.6 ohm
Tvj = 150 °C
Fig. 3 Typical transfer characteristics, chip level Fig. 4 Turn-off safe operating area (RBSOA)
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 6 of 9
0.00
0.05
0.10
0.15
0.20
0 100 200 300 400 500
IC [A]
E
on
, E
off
[J]
VCC = 900 V
RG = 5.6 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
Eon
Eoff
0.00
0.05
0.10
0.15
0.20
0 5 10 15 20 25
RG [ohm]
E
on
, E
off
[J]
VCC = 900 V
IC = 225 A
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current
Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.10
1.00
0 100 200 300 400 500
IC [A]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
VCC = 900 V
RG = 5.6 ohm
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH
td(off)
td(on)
tf
tr
0.01
0.10
1.00
10.00
0 5 10 15 20 25
RG [ohm]
t
d(on)
, t
r
, t
d(off)
, t
f
[µs]
VCC = 900 V
IC = 225 A
VGE = ±15 V
Tvj = 125 °C
Ls = 55 nH td(off)
td(on)
tr
tf
Fig. 7 Typical switching times
vs collector current
Fig. 8 Typical switching times
vs gate resistor
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 7 of 9
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
Coes
Cres
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Qg [µC]
V
GE
[V]
VCC = 900 V
VCC = 1300
IC = 225 A
Tvj = 25 °C
Fig. 9 Typical capacitances
vs collector-emitter voltage
Fig. 10 Typical gate charge characteristics
0
100
200
300
400
0 20 40 60 80 100 120 140 160
Th [°C]
I
C
, I
F
[A]
IGBT
Diode
VGE ³ 15 V
Tvj = 150 °C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 20406080100120140
T [°C]
R
T
[ohm]
)11(
0
0
TTB
TT eRR -
=
298%),2(760%),3(1 00
K
T
K
B
k
R
T=±
-
=±W=
Fig. 11 Rated current vs temperature Fig. 12 PTC temperature sensor
5SNS 0225U172100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1537-01 Jan. 04 page 8 of 9
0
5
10
15
20
25
30
35
40
45
50
0 100 200 300 400 500
IF [A]
E
rec
[mJ]
0
50
100
150
200
250
I
rr
[A], Q
rr
[µC]
VCC = 900 V
RG = 5.6 ohm
Tvj = 125 °C
Ls = 55 nH Irr
Erec
Qrr
0
50
100
150
200
250
300
350
400
450
0.0 1.0 2.0 3.0
VF [V]
I
F
[A]
25°C
125°C
Fig. 13 Typical reverse recovery characteristics
vs forward current
Fig. 14 Typical diode forward characteristics,
chip level
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
RG [ohm]
E
rec
[mJ]
0
50
100
150
200
250
300
350
400
I
rr
[A], Q
rr
[µC]
VCC = 900 V
IF = 225 A
Tvj = 125 °C
Ls = 55 nH
Erec
Irr
Qrr
Fig. 15 Typical reverse recovery characteristics
vs gate resistor
5SNS 0225U172100
This technical information specifies semiconductor devices but promises no characteristics. No warranty or
guarantee expressed or implied is made regarding delivery, performance or suitability.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1537-01 Jan. 04
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ih)-(jth å
=
i
t
i 12345
Ri(K/kW) 101 12.1 3.6 3.0
IGBT
ti(ms) 198 14.2 3.0 0.5
Ri(K/kW) 60.0 160 5.72 9.82
DIODE
ti(ms) 195 190 5.67 1.38
0.0001
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
t [s]
Z
th(j-h)
[K/W] IGBT, DIODE
Zth(j-h) IGBT
Zth(j-h) Diode
Fig. 16 Typical thermal impedance vs time