Silicon Switching Diode Applications 1N914 or 1N914-1 DO-35 Glass Package Used in general purpose applications, where performance and switching speed are important. DO-35 Glass Package Features Six sigma quality Metallurgically bonded BKC's Sigma BondTM plating for problem free solderability LL-34/35 MELF SMD available Full approval to Mil-S-19500/116 Available up to JANTXV levels "S" level screening available to SCDs Maximum Ratings Peak Inverse Voltage L ea dDi a. 0 .0 18-0 .0 22" 0 .458-0 .558m m 1.0" 25.4 mm (Min.) Length Dia. 0.120-.200" 3.05-5.08- m 0.06-0.09" m 1.53-2.28m m Symbol Value Unit PIV 100 (Min.) Volts Average Rectified Current IAvg 75 mAmps Continuous Forward Current IFdc 300 mAmps Peak Surge Current (tpeak = 1 sec.) Ipeak 0.5 Amp Ptot 250 mWatts o Power Dissipation @ TL=50 C, L = 3/8" from body Storage & Operating Temperature Range Electrical Characteristics @ 25 oC* Breakdown Voltage @ Ir = 0.1 mA TSt & Op Symbol -65 to +200 Absolute Limits PIV 100 (Min) o C Unit Volts Reverse Leakage Current @ VR = 20 V IR 0.025 (Max) A Reverse Leakage (Vr =20 V, 150 oC) IR 50 (Max) A Reverse Leakage Current @ VR = 75 V IR 5.0 (Max) A Capacitance @ VR = 0 V, f = 1mHz CT 4.0 (Max) pF Reverse Recovery Time (note 1) trr 4.0 (Max) nSecs Forward Recovery Time (note 2) Vfr 2.5 (Max) Volts Note 1: IF = 10 mA, RL = 100 Ohms, Vr = 6.0 Volts , Irr =1.0 mA Note 2: IF = 50 mA dc *UNLESS OTHERWISE SPECIFIED 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135