SDI100S12
SPT IGBT Modules
Absolute Maximum Ratings
Symbol Conditions Values Units
IGBT
VCES V
IC TC= 25(80)
oC
A
ICRM A
VGES
TVj,(Tstg)
Visol
Inverse Diode
TC = 25
oC
, unless otherwise specified
TC= 25(80)
oC, tP =1ms
TOPERATION <
_Tstg
AC, 1min
IF=-IC
IFRM
IFSM
TC= 25(80)
oC
TC= 25(80)
oC, tP =1ms
tP =10ms; sin.;Tj=150oC
1200
145(105)
290(210)
+20
_
40...+150(125)
4000
95(65)
290(210)
720
_
V
oC
V
A
A
A
Dimensions in mm (1mm = 0.0394")
SDI100S12
SPT IGBT Modules
Characteristics
Symbol Conditions min. typ. max. Units
IGBT
VGE(th) VGE = VCE, IC = 3mA 4.8 5.5 6.45 V
ICES VGE = 0; VCE = VCES; Tj = 25(125)
oC
0.1 0.3 mA
VCE(TO) Tj = 25(125)
oC
1(0.9) 1.15(1.05) V
rCE VGE = 20V, Tj = 25(125)
oC
13(16) 16(20) m
VCE(sat) IC = 50A; VGE = 15V; chip level 1.9(2.1) 2.35(2.55) V
Cies under following conditions
Coes VGE = 0, VCE = 25V, f = 1MHz 0.74
Cres 0.71
LCE 25 nH
RCC'+EE' res., terminal-chip TC = 25(125)
oC
0.75(1) m
under following conditions:
td(on) VCC = 600V, IC = 50A 150 ns
trRGon = RGoff = 15 , Tj = 125
oC
45 ns
td(off) VGE = ± 15V 560 ns
tf50 ns
Eon(Eoff) 8.5(7.5) mJ
Inverse Diode under following conditions:
VF = VEC IF = 75A; VGE = 0V; Tj = 25(125)
oC
2(1.8) 2.5 V
V(TO) Tj = 25(125)
oC
1.3 V
rTTj = 25(125)
oC
13 16 m
IRRM IF = 75A; Tj = 125
oC
105 A
Qrr di/dt = 3100A/us uC
Err VGE = V mJ
Thermal Characteristics
Rth(j-c) per IGBT 0.21 K/W
Rth(j-c)D per Inverse Diode 0.5 K/W
Rth(c-s) per module 0.05 K/W
Mechanical Data
Msto heatsink M6 3 5 Nm
Mtto terminals M5 2.5 5 Nm
w 160 g
TC = 25
oC
, unless otherwise specified
nF
1.05
10.5
6.2
3.4
