mm 8917602 OO0bbbb 2 mm -07-/9 HIGH Q - HIGH CAPACITANCE T SILICON EPITAXIAL VARACTRON VA521-824 VOLTAGE-VARIABLE CAPACITANCE DIODES TELEDYNE COMPONENTS ase D GEOMETRY 417 (VA521-524) GEOMETRY 423 (VA621-624) | _ GEOMETRY 418 (VA624-824) LEADS 020! 002" DIA = ATH iE INDICATED BY COLOR BAND oAte CONSTRUCTION (P-++NN-+) casestyie Q AS HIGH AS 200 =4f Fa * DC(MWV) RATINGS Tabied KSEE FROM 25-100 VOLTS e WIDE AREA CASE STYLE 2 oa cao a3 e ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS Ut se th 025s MAX MIN MAX PARAMETER SYMBOL MAX. UNITS Operating Temperature Tepe =| ~65 to +150] C ; case Srvie 3 Storage Temperature Tag ~65 to +175 Total Power Dissipation (@ 25C in free air) Pp 1 Watt os my Maximum Working Voltage MWY | As Specified* voc *Bias voltage plus signal voltage should not exceed MWV wae bia, Fo 9g ole 1 00 el All Cimensions in Inehes ELECTRICAL CHARACTERISTICS TA = 25C (Unless Otherwise Stated) MAXIMUM MINIMUM - CAPACITANCE WORKING RS SATURATION DIODE (pf VOLTAGE Q (MIN) MINIMUM (OHMS MAX.) | VOLTAGE | CASE TYPE |@-4VDC @ -8VDC (VDC) @ -8VDC 25MC TUNING RATIO @ -8VDC @ 10uA STYLE VA524 330 250 400 200 C-2VIC-100V_5.0 425 4410 4 VA522 330 250 80 200 C-2VIC-80V_ 4.0 425 90 4 VA523 330 250 50 200 C-1VIC-50V__4.0 425 60 A VA524 330 250 26 200 C-A{VIC-25V 3.0 425 30 4 VA6214 660 500 400 450 C-2ViC-100V_ 5.0 09 440 2 VA622 660 500 80 450 C-2ViC-80V 4.0 09 90 2 VA623 660 500 50 450 C-4VIC-50V__4.0 09 60 2 VA624 660 500 25 450 C-1V/iC-25V 3.0 09 30 2 VA723 990 750 50 150 C-AVIC-50V__4.0 .06 60 2 VA724 990 750 25 450 C-AVIC-25V 3.0 06 30 2 VA823 4320 4000 50 400 C-AVIC-50V_ 4.0 06 60 3 VA824 4320 4000 26 400 C-1VIC-25V 3.0 06 30 3 NOTE: Capacitance values are + 20%. Tolerances of + 10% and +5%, and matched pairs, are available upon request. Capacitance values can be modified to meet specific requirements. 96 TELEDYNE CRYSTALONICS siaisanncretencenseeaie fine y0-220-1196 144 4198 F-07 rTELEDYNE COMPONENTS ege D VA521 824 Continued TYPICAL DIODE CAPACITANCE VS. REVERSE BIAS VOLTAGE 3 CAPACITANCE azf 3 T,= 25C BIAS= 4 C,=KV+ o 0.1 1.0 10 100 REVERSE BIAS VOLTAGE (VDC) TYPICAL FIGURE OF MERIT VS. REVERSE BIAS VOLTAGE MB 8917602 GOOLE? 4 mm T-07-19 TYPICAL FIGURE OF MERIT VS. FREQUENCY 10,000 3 - FIGURE OF MERIT (Q) 3 10 100 FREQUENCY (MC) 10 TYPICAL TUNING RATIO VS. REVERSE BIAS VOLTAGE 600 14 & 500 E a ge 12 T,=25C - T,=25C 3 i = 4 VDC c 400+t BIAS= 8VDC 5. = f=25MC = 8 u. 300 < Q 500 o z 2 Zz 4 5 = 100 2 9 10 30 60 REVERSE SIAS VOLTAGE (VDC) 2 3.94 56 10 20 4630 40 5060 9 20 40 50 70 =80 100 REVERSE BIAS VOLTAGE (VOC) 100 90 Crystalonics VA521.824 Varactron Voltage-Variable Capacitance Diodes are designed for applications such as VHF-UHF frequency multiplication, harmonic generation, oscillator tuning, electronic tuning, frequency modulation, parametric amplifiers, automatic frequency control, limiting, and switching. These diodes are manu- factured by Crystalonics exclusive Epitaxial Junction Process, which provides close parameter tolerances, high parameter stability, ex- treme ruggedness, and a high product of Q and Maximum Working Voltage. 447 Sherman Street, Cambridge, MA 02140 USA Tek: (617) 494-1670 FAX: 617/547-6149 TWX: 710-320-1196 $e TELEDYNE CRYSTALONICS - 4199 F-08 Hearne ges Ne 145