2SD882 - STMICROELECTRONICS - Datasheet.Directory

October 2007 Rev 3 1/8

2SD882

NPN medium power transistor

Features

■High current

■Low saturation voltage

■Complement to 2SB772

Applications

■Voltage regulation

■Relay driver

■Generic switch

■Audio power amplifier

■DC-DC converter

Description

The device is a NPN transistor manufactured by

using planar technology resulting in rugged high

performance devices. The complementary PNP

type is 2SB772.

Figure 1. Internal schematic diagram

SOT-32

(TO-126)

321

Table 1. Device summary

Order code Marking Package Packing

2SD882 D882 SOT-32 Tube

www.st.com

Absolute maximum ratings 2SD882

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1 Absolute maximum ratings

Table 2. Absolute maximum rating

Symbol Parameter Value Unit

VCBO Collector-base voltage (IE = 0) 60 V

VCEO Collector-emitter voltage (IB = 0) 30 V

VEBO Collector-base voltage (IC = 0) 5 V

ICCollector current 3 A

ICM Collector peak current (tP < 5ms) 6 A

IBBase current 1 A

IBM Base peak current (tP < 5ms) 2 A

PTOT Total dissipation at Tc = 25°C 12.5 W

TSTG Storage temperature -65 to 150 °C

TJMax. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

RthJ-case Thermal resistance junction-case max 10 °C/W

2SD882 Electrical characteristics

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2 Electrical characteristics

(TCASE = 25°C; unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0) VCE = 60 V 10 µA

ICEO

Collector cut-off current

(IB = 0) VCE = 30 V 100 µA

IEBO

Emitter cut-off current

(IC = 0) VEB = 5 V 10 µA

V(BR)CEO

(1)

Collector-emitter breakdown

voltage

(IB = 0 )

IC = 10 mA 30 V

V(BR)CBO

Collector-base breakdown

voltage

(IE = 0 )

IC = 100 µA 60 V

V(BR)EBO

Emitter-base breakdown

voltage

(IC = 0 )

IE = 100 µA 5 V

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 1 A IB = 50 mA

IC = 2 A IB = 100 mA

IC = 3 A IB = 150 mA

0.4

0.7

1.1

VBE(sat)

(1)

1. Pulsed duration = 300 ms, duty cycle ≤1.5%.

Base-emitter saturation

voltage IC = 2 A IB = 100 mA 1.2 V

hFE DC current gain

IC = 100 mA VCE = 2 V

IC = 1 A VCE = 2 V

IC = 3 A VCE = 2 V

100

300

fTTransition frequency IC = 0.1 A VCE = 10 V 100 MHz

Electrical characteristics 2SD882

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2.1 Typical characteristics (curves)

Figure 2. Reverse biased safe operating area Figure 3. DC current gain

Figure 4. Collector-emitter saturation voltage Figure 5. Base-emitter saturation voltage

2SD882 Package mechanical data

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3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of

second level interconnect is marked on the package and on the inner box label, in

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering

conditions are also marked on the inner box label. ECOPACK is an ST trademark.

ECOPACK specifications are available at: www.st.com

Package mechanical data 2SD882

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DIM. mm.

MIN. TYP MAX.

A2.4 2.9

B 0.64 0.88

B1 0.39 0.63

D 10.5 11.05

E7.4 7.8

e 2.04 2.29 2.54

e1 4.07 4.58 5.08

L15.3 16

P2.9 3.2

Q3.8

Q1 1 1.52

H2 2.15

I1.27

SOT-32 (TO-126) mechanical data

0016114E

2SD882 Revision history

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4 Revision history

Table 5. Document revision history

Date Revision Changes

09-Sep-2005 2 Final datasheet. New template

02-Oct-2007 3 Updated mechanical data

2SD882

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