MMBT2369-G (NPN)
RoHS Device
General Purpose Transistors
QW-BTR24 Page 1
REV:A
Features
-Power dissipation
PC=0.3W
Marking: M1J
Dimensions in inches and (millimeter)
Symbol
Parameter Value Unit
O
Maximum Ratings (at Ta=25 C unless otherwise noted)
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current-continuous
Power dissipation
Thermal resistance, junction to ambient air
Junction and storage temperature range
SMD Diodes Specialist
COMCHIP
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.083(2.10)
0.066(1.70)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.006(0.15) max
0.007(0.20) min
Symbol
Parameter Conditions Min
Max
Unit
O
Electrical Characteristics (at Ta=25 C unless otherwise noted)
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Collector output capacitance
Turn on time
Storage time
Turn off time
40
15
4.5
40
20
0.4
120
0.25
4
12
13
18
V
V
V
μA
V
pF
nS
nS
nS
Typ.
V(BR)CBO
V(BR)CEO
ICBO
hFE(1)
VCE(SAT)
Cob
tON
V(BR)EBO
hFE(2)
tS
tOFF
IC=10μA, IE=0
IC=10mA, IB=0
IE=10μA, IC=0
VCB=20V, IE=0
VCE=1V, IC=10mA
VCE=2V, IC=100mA
IC=10mA, IB=1mA
VCB=5V, IE=0, f=1MHz
VCC=3V, IC=10mA,
IB=3mA
VCC=3V, IC=10mA
IB1=3mA, IB2=1.5mA
1
Base
2
Emitter
Collector
3
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
40
15
4.5
0.2
300
417
-55 to +150
V
V
V
A
mW
OC/W
OC
RATING AND CHARACTERISTIC CURVES (MMBT2369-G)
Page 2
QW-BTR24
Fig.1 Minimum Current Gain
Characteristics
hFE, Minimum Current Gain
IC, Collector Current (mA)
110 100
Fig.2 Saturation Voltage Limits
0.2
V(SAT), Saturation Voltage (V)
IC, Collector Current (mA)
1
Fig.3 Typical Temperature Coefficient
-2.5
O
Temperature Coefficient (mV/ C)
IC, Collector Current (mA)
0100
1.4
80
1.0
-1.0
SMD Diodes Specialist
COMCHIP
REV:A
0.8
1.2
10
0.5
20
100
200
100
20 60
General Purpose Transistors
CE=
V1V
O
TJ=125 C
O
TJC=75
O
TJ=25C
O
TJ=-5C1
O
TJ= 5 C
-5
0.4
0.6
1.0
F=1β 0
O
J5 C
T =2
M x. BE(SAT)
a V
Mn. VBE(S T)
iA
Mx. CE(SAT)a V
40
-2.0
-1.5
-0.5
0
θV for V E AT
CC (S)
O O
25 C to 125 C
O O
-55 C to 125 C
O O
25 C to 125 C
O O
-55 C to 125 C
θBVor V f ES T
B( A )
