© Semiconductor Components Industries, LLC, 2015
December, 2017 − Rev. 3 1Publication Order Number:
MMBT5401W/D
MMBT5401W
High Voltage Transistor
PNP Silicon
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −150 Vdc
Collector−Base Voltage VCBO −160 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−500 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR−5 Board (Note 2)
TA = 25°C
Derate Above 25°C
PD400
3.2
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient RqJA 312 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−5 @ 100 mm2, 0.5 oz. copper traces, still air.
2. FR−5 = 1.0 0.75 0.062 in.
Device Package Shipping†
ORDERING INFORMATION
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MMBT5401WT1G,
NSVMMBT5401WT1G SC−70
(Pb−Free) 3000 / Tape &
Reel
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
4W = Specific Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
4W MG
G
1
MMBT5401W
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0) V(BR)CEO −150 −Vdc
Collector−Base Breakdown Voltage
(IC = −100 mAdc, IE = 0) V(BR)CBO −160 −Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 −Vdc
Collector−Base Cutoff Current
(VCB = −120 Vdc, IE = 0)
(VCB = −120 Vdc, IE = 0, TA = 100°C)
ICBO −
−−50
−50 nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −1.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
(IC = −50 mAdc, VCE = −5.0 Vdc)
hFE 50
60
50
−
240
−
−
Collector−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat) −
−−0.2
−0.5
Vdc
Base−Emitter Saturation Voltage
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat) −
−−1.0
−1.0
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) fT100 300 MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 6.0 pF
Small Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 40 200 −
Noise Figure
(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) NF − 8.0 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MMBT5401W
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3
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
IB, BASE CURRENT (mA)
1.0
0.1 0.5 2.0 100.2 1.0 5.0 20 50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005 0.01 0.02 0.05
Figure 3. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (A)μIC
103
0.10.3 0.2
102
101
100
10-1
10-2
10-3
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
IC = 1.0 mA 10 mA 30 mA 100 mA
VCE = 30 V
IC = ICES
TJ = 125°C
75°C
25°C
REVERSE FORWARD
IC, COLLECTOR CURRENT (mA)
1001010.1
10
100
1000
hFE, CURRENT GAIN
VCE = 5 V
TJ = 150°C
TJ = −55°C
TJ = 25°C
MMBT5401W
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4
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
0.03
0.05
0.08
0.10
0.15
0.18
0.20
0
.1
0.010.0010.0001
0.2
0.3
0.4
0.5
0.7
0.8
0.9
1.0
Figure 6. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
0.13
IC/IB = 10
150°C
−55°C
25°C0.6
IC/IB = 10
150°C
−55°C
25°C
0.4
0.9
VCE = 10 V
150°C
−55°C
25°C
Figure 7. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
2.5
C, CAPACITANCE (pF)
100
TJ = 25°C
Cibo
Figure 8. Switching Time Test Circuit
VR, REVERSE VOLTAGE (VOLTS)
V, TEMPERATURE COEFFICIENT (mV/ C)°θ
Figure 9. Capacitances
10.2 V
Vin
10 ms
INPUT PULSE
VBB
+8.8 V
100
RB
5.1 k
0.25 mF
Vin 100 1N914
Vout
RC
VCC
-30 V
3.0 k
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
Values Shown are for IC @ 10 mA
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 1000.3 3.0 30
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
TJ = - 55°C to 135°C
qVC for VCE(sat)
qVB for VBE(sat)
Cobo
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0
0.7 7.0
MMBT5401W
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5
t, TIME (ns)
1000
100
200
300
500
700
10
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 10. Turn−On Time
IC/IB = 10
TJ = 25°C
td @ VBE(off) = 1.0 V
VCC = 120 V
tr @ VCC = 30 V
tr @ VCC = 120 V
t, TIME (ns)
2000
100
200
300
500
700
20
30
50
70
0.2 0.5 1.0 2.0 5.0 10 200.3 3.0 30 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−Off Time
1000 tf @ VCC = 120 V
tf @ VCC = 30 V
ts @ VCC = 120 V
IC/IB = 10
TJ = 25°C
Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area
IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
10
100
1000
1000100101
0.001
0.01
0.1
1
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
IC, COLLECTOR CURRENT (A)
VCE = 1 V
TA = 25°C
1 Sec
10 mSec
MMBT5401W
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6
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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Phone: 81−3−5817−1050
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