NTE725
Integrated Circuit
Dual Low Noise Preamp/OP Amp
Description:
The NTE725 consists of two identical high–gain operational amplifiers constructed on a single chip.
These 3–stage amplifiers use Class A PNP transistor output stages with uncommitted collectors. This
enables a variety of loads to be employed for general purpose applications from DC to 10MHz, where
two high performance operation amplifiers are required. In addition, the outputs may be wired–OR
for use as a dual comparator or they may function as diodes in low thershold rectifying circuits such
as absolute value amplifiers, peak detectors, etc.
Features:
DSingle or Dual Supply Operation
DLow Power Consumption
DHigh Gain
DLarge Common Mode Range: +11V, –13V
DExcellent Gain Stability vs. Supply Voltage
DNo Latch–Up
DOutput Short Circuit Protected
Absolute Maximum Ratings:
Supply Voltage ±18V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Internal Power Dissipation 650mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential Input Voltage ±5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Voltage (Note 1) ±15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short Circuit Duration (TA = +25°C, Note 2) 30sec. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range 0° to +70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range –55° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature (During Soldering, 60sec) +260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Fo r s upply v oltages l ess t han ±15V, t he a bsolute m aximum input v oltage i s e qual to t he s upply
voltage.
Note 2. Short circit may be to GND or either supply.
Electrical Characteristics: (TA = +25°C, V+ = ±15V, RL = 5kΩ to Pin7 unless otherwise specified)
Parameter Test Conditions Min Typ Max Unit
Input Offset Voltage RS = 200Ω–1.0 6.0 mV
V+ = ±4V, RL = 10kΩ to Pin7, RS = 200Ω–1.0 6.0 mV
Input Offset Current –50 1000 nA
V+ = ±4V, RL = 10kΩ to Pin7 –50 1000 nA
Input Bias Current –0.3 2.0 µA
V+ = ±4V, RL = 10kΩ to Pin7 –300 –µA
Input Resistance 37 150 –kΩ
Large Signal Voltage Gain VOUT = ±10V 6.5k 20k –V/V
V+ = ±4V, RL = 10kΩ to Pin7, VOUT = ±2V 2.5k 15k –V/V
Positive Output Voltage Swing +12 +13 –V
V+ = ±4V, RL = 10kΩ to Pin7 +2.5 +2.8 –V
Negative Output Voltage Swing –14 –15 –V
V+ = ±4V, RL = 10kΩ to Pin7 –3.6 –4.0 –V
Output Resistance f = 1kHz –5.0 –kΩ
Common Mode Rejection Ratio RS = 200Ω, VIN = +11.5v to –13.5V 70 90 –dB
Supply Voltage Rejection Ratio RS = 200Ω–50 –µV/V
Input Voltage Range –10 –+11 V
Internal Power Dissipation V+ = ±4V, RL = 10kΩ to Pin7, VOUT = 0 –20 –mW
Supply Current VOUT = 0 –9 14 mA
V+ = ±4V, RL = 10kΩ to Pin7, VOUT = 0 –2.5 –mA
Broadband Noise Figure RS = 10kΩ, BW = 10Hz to 10kHz –2.0 –dB
Turn–On Delay Open Loop, VIN = ±20mV –0.2 –µs
Turn–Off Delay Open Loop, VIN = ±20mV –0.3 –µs
Slew Rate (Unity Gain) C1 = 0.02µF, R1 = 33Ω, C2 = 10pF –1.0 –V/µs
Channel Separation RS = 1kΩ, f = 10kHz –140 –dB
(+) VCC
Pin Connection Diagram
(–) VCC
Non–Invert Input B
Output B
1
2
3
4
Output A
Output Lag A
Input Lag A
Input Lag A
5Non–Invert Input A
6Inverting input A
7
14
13
12
11
Output Lag B
Input Lag B
10 Input Lag B
9
8Inverting Input B
.600 (15.24)
17
14 8
.300
(7.62)
.200 (5.08)
Max
.100 (2.45) .099 (2.5) Min
.785 (19.95)
Max
