2
Electrical Characteristics @ Tj = 25 °C
Symbol Parameter Conditions Min Max Unit
OFF CHARACTERISTICS
V(BR)CBO Breakdown Voltage, Collector to Base Bias Cond. D, IC=10uAdc 75 Vdc
V(BR)EBO Breakdown Voltage, Emitter to Base Bias Cond. D, IE=10uAdc 6Vdc
V(BR)CEO Breakdown Voltage, Collector to Emitter Bias Cond. D, IC= 10mAdc, pulsed 50 Vdc
ICES Collector to Emitter Cutoff Current Bias Cond. D, VCE=50Vdc 50 nAdc
ICBO1 Collector to Base Cutoff Current Bias Cond. D, VCB=60Vdc 10 nAdc
IEBO Emitter to Base Cutoff Current Bias Cond. D, VEB= 4Vdc 10 nAdc
hFE1 Forward-Current Transfer Ratio VCE=10Vdc, IC=0.1mAdc 50
hFE2 Forward-Current Transfer Ratio VCE=10Vdc, IC=1.0mAdc 75 325
hFE3 Forward-Current Transfer Ratio VCE=10Vdc, IC=10mAdc 100
hFE4 Forward-Current Transfer Ratio VCE=10Vdc, IC=150mAdc, pulsed 100 300
hFE5 Forward-Current Transfer Ratio VCE=10Vdc, IC=500mAdc, pulsed 30
VCE(sat)1 Collector to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.3 Vdc
VCE(sat)2 Collector to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 1Vdc
VBE(sat)1 Base to Emitter Saturation Voltage IC=150mAdc, IB=15mAdc, pulsed 0.6 1.2 Vdc
VBE(sat)2 Base to Emitter Saturation Voltage IC=500mAdc, IB=50mAdc, pulsed 2Vdc
SMALL SIGNAL CHARACTERISTICS
hfe Short Circuit Forward Current Xfer Ratio VCE= 10Vdc,IC =1mAdc, f= 1kHz 50
/hfe/ Magnitude of Short Circuit Forward VCE= 20Vdc,IC =50mAdc, f=100MHz 2.5
Current Transfer Ratio
Cobo Output Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz 8pF
Cibo Input Capacitance VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz 25 pF
SWITCHING CHARACTERISTICS
ton Saturated Turn-on Time As defined in 19500/255 Figure 8 45 nS
toff Saturated Turn-off Time As defined in 19500/255 Figure 9 300 nS