M1F80
800V 1A
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Case:
OUTLINE DIMENSIONS
RATINGS
Case :M1F
SHINDENGEN
Unit : mm
High reliability with superior moisture
resistance
Applicable to Automatic Insertion
FEATURES
Conventional Rectification
Power source(Power Supply)
Home Appliances, Office Equipment
Telecommunication, Factory Automation
APPLICATION
●AbsoluteMaximumRatings(IfnotspecifiedTl=25℃)
Item Symbol Conditions Ratings Unit
StorageTemperature Tstg -55〜150
OperatingJunctionTemperature Tj 150
MaximumReverseVoltage VRM 800 V
AverageRectifiedForwardCurrent IO50Hzsinewave,R-load,Ta=25℃Onaluminasubstrate 1.0 A
50Hzsinewave,R-load,Ta=25℃Onglass-epoxysubstrate 0.64
PeakSurgeForwardCurrent IFSM 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=25℃ 25 A
●ElectricalCharacteristics(IfnotspecifiedTl=25℃)
Item Symbol Conditions Ratings Unit
ForwardVoltage VFIF=1A,Pulsemeasurement Max.1.1 V
ReverseCurrent IRVR=VRM,Pulsemeasurement Max.10 μA
θjl junctiontolead Max.20
ThermalResistance θja junctiontoambient,Onaluminasubstrate Max.108 ℃/W
junctiontoambient,Onglass-epoxysubstrate Max.186
General Purpose Rectifiers Single
Forward Voltage
00.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.1
1
10
M1Fx
Pulse measurement per diode
Tl=150°C [TYP]
Tl=25°C [TYP]
Forward Voltage VF [V]
Forward Current IF [A]
0
0.5
1
1.5
2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
M1Fx Forward Power Dissipation
SIN
Average Rectified Forward Current IO [A]
Forward Power Dissipation PF [W]
Tj = 150°C
Sine wave
020 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
M1Fx Derating Curve
SIN
Ambient Temperature Ta [°C]
Average Rectified Forward Current IO [A]
Sine wave
R-load
Free in air
Alumina substrate
Soldering land 2mmφ
Conductor layer 20µm
Substrate thickness 0.64mm
020 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
M1Fx Derating Curve
SIN
Ambient Temperature Ta [°C]
Average Rectified Forward Current IO [A]
Sine wave
R-load
Free in air
Glass-epoxy substrate
Soldering land 2mmφ
Conductor layer 35µm
Peak Surge Forward Capability
0
10
20
30
40
50
1 10 100
M1Fx
2 5 20 50
IFSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current IFSM
[A]
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied