Rev.2.1_00
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE DETECTOR S-801 Series
Seiko Instruments Inc. 1
The S-801 Series is a series of high-precision voltag
e
detectors with a built-in delay time generator of fixed tim
e
developed using CMOS process. The detection voltage i
s
fixed internally, with an accuracy of ±2.0 %. Internal oscillato
r
and counter timer can delay the release signal withou
t
external parts. Three delay times 50 ms, 100 ms, and 200 m
s
are available. Two output forms, Nch open-drain and CMO
S
output, are available.
Features
• Ultra-low current consumption 1.3 µA typ. (at VDD=3.5 V)
• High-precision detection voltage ±2.0 %
• Hysteresis characteristics 60 mV typ.
• Detection voltage 2.2 V to 6.0 V (0.1 V step)
• Three delay times A type 50 ms typ.
B type 100 ms typ.
C type 200 ms typ.
• ON/OFF switching function of delay time (DS pin)
• Operating voltage range 0.95 V to 10.0 V
• Output forms Nch open-drain output (Active Low)
CMOS output (Active Low)
Applications
• Power monitor for portable equipment such as notebook computers, digital still cameras, PDA, and
cellular phones.
• Constant voltage power monitor for cameras, video equipment and communication devices.
• Power monitor for microcomputers and reset for CPUs.
Packages
Package name Drawing code
Package Tape Reel
SOT-23-5 MP005-A MP005-A MP005-A
SNT-4A PF004-A PF004-A PF004-A
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
2 Seiko Instruments Inc.
Block Diagrams
1. Nch Open-drain Output Products
+
−
Delay circuit
DS
Oscillator
counter
timer
OUT
*1
VREF
VSS
VDD
*1
*1
*1. Parasitic diode
Figure 1
2. CMOS Output Products
VREF
+
− OUT
*1
*1
Delay circuit
DS
Oscillator
counter
timer
VSS
VDD
*1
*1
*1. Parasitic diode
Figure 2
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 3
Product Name Structure
The detection voltage, delay time, output form and packages for S-801 Series can be selected at the user's
request. Refer to the "1. Product name" for the construction of the product name and "2. Product Name
List" for the full product names.
1. Product Name
1-1. SOT-23-5 package
S-801xx x x MC - xxx - T2
IC direction in tape specifications
*
1
T2: SOT-23-5
Product code*2
Package code
MC: SOT-23-5
Output form
N: Nch open-drain output (Active low)
L: CMOS output (Active low)
Delay time
A: 50 ms typ.
B: 100 ms typ.
C: 200 ms typ.
Detection voltage value
22 to 60
(e.g. When the detection voltage is 2.2 V,
it is expressed as 22.)
*1. Refer to the taping specifications at the end this book. T2 is the standard.
*2. Refer to the Table 1 in the “2. Product name list”.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
4 Seiko Instruments Inc.
1-2. SNT-4A package
S-801xx x x PF - xxx TF G
Fixed
IC direction in tape specifications*1
TF: SNT-4A
Product code*2
Package code
PF: SNT-4A
Output form
N: Nch open-drain output (Active low)
L: CMOS output (Active low)
Delay time
A: 50 ms typ.
B: 100 ms typ.
C: 200 ms typ.
Detection voltage value
22 to 60
(e.g. When the detection voltage is 2.2 V,
it is expressed as 22.)
*1. Refer to the taping specifications at the end this book. TF is the standard.
*2. Refer to the Table 2 in the “2. Product name list”.
2. Product Name List
2-1. SOT-23-5
Table 1 (1/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
2.2 V ±2.0% 50 ms typ. S-80122ANMC-JCH-T2 S-80122ALMC-JAH-T2
100 ms typ. S-80122BNMC-JGH-T2 S-80122BLMC-JEH-T2
200 ms typ. S-80122CNMC-JKH-T2 S-80122CLMC-JIH-T2
2.3 V ±2.0% 50 ms typ. S-80123ANMC-JCI-T2 S-80123ALMC-JAI-T2
100 ms typ. S-80123BNMC-JGI-T2 S-80123BLMC-JEI-T2
200 ms typ. S-80123CNMC-JKI-T2 S-80123CLMC-JII-T2
2.4 V ±2.0% 50 ms typ. S-80124ANMC-JCJ-T2 S-80124ALMC-JAJ-T2
100 ms typ. S-80124BNMC-JGJ-T2 S-80124BLMC-JEJ-T2
200 ms typ. S-80124CNMC-JKJ-T2 S-80124CLMC-JIJ-T2
2.5 V ±2.0% 50 ms typ. S-80125ANMC-JCK-T2 S-80125ALMC-JAK-T2
100 ms typ. S-80125BNMC-JGK-T2 S-80125BLMC-JEK-T2
200 ms typ. S-80125CNMC-JKK-T2 S-80125CLMC-JIK-T2
2.6 V ±2.0% 50 ms typ. S-80126ANMC-JCL-T2 S-80126ALMC-JAL-T2
100 ms typ. S-80126BNMC-JGL-T2 S-80126BLMC-JEL-T2
200 ms typ. S-80126CNMC-JKL-T2 S-80126CLMC-JIL-T2
2.7 V ±2.0% 50 ms typ. S-80127ANMC-JCM-T2 S-80127ALMC-JAM-T2
100 ms typ. S-80127BNMC-JGM-T2 S-80127BLMC-JEM-T2
200 ms typ. S-80127CNMC-JKM-T2 S-80127CLMC-JIM-T2
2.8 V ±2.0% 50 ms typ. S-80128ANMC-JCN-T2 S-80128ALMC-JAN-T2
100 ms typ. S-80128BNMC-JGN-T2 S-80128BLMC-JEN-T2
200 ms typ. S-80128CNMC-JKN-T2 S-80128CLMC-JIN-T2
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 5
Table 1 (2/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
2.9 V ±2.0% 50 ms typ. S-80129ANMC-JCO-T2 S-80129ALMC-JAO-T2
100 ms typ. S-80129BNMC-JGO-T2 S-80129BLMC-JEO-T2
200 ms typ. S-80129CNMC-JKO-T2 S-80129CLMC-JIO-T2
3.0 V ±2.0% 50 ms typ. S-80130ANMC-JCP-T2 S-80130ALMC-JAP-T2
100 ms typ. S-80130BNMC-JGP-T2 S-80130BLMC-JEP-T2
200 ms typ. S-80130CNMC-JKP-T2 S-80130CLMC-JIP-T2
3.1 V ±2.0% 50 ms typ. S-80131ANMC-JCQ-T2 S-80131ALMC-JAQ-T2
100 ms typ. S-80131BNMC-JGQ-T2 S-80131BLMC-JEQ-T2
200 ms typ. S-80131CNMC-JKQ-T2 S-80131CLMC-JIQ-T2
3.2 V ±2.0% 50 ms typ. S-80132ANMC-JCR-T2 S-80132ALMC-JAR-T2
100 ms typ. S-80132BNMC-JGR-T2 S-80132BLMC-JER-T2
200 ms typ. S-80132CNMC-JKR-T2 S-80132CLMC-JIR-T2
3.3 V ±2.0% 50 ms typ. S-80133ANMC-JCS-T2 S-80133ALMC-JAS-T2
100 ms typ. S-80133BNMC-JGS-T2 S-80133BLMC-JES-T2
200 ms typ. S-80133CNMC-JKS-T2 S-80133CLMC-JIS-T2
3.4 V ±2.0% 50 ms typ. S-80134ANMC-JCT-T2 S-80134ALMC-JAT-T2
100 ms typ. S-80134BNMC-JGT-T2 S-80134BLMC-JET-T2
200 ms typ. S-80134CNMC-JKT-T2 S-80134CLMC-JIT-T2
3.5 V ±2.0% 50 ms typ. S-80135ANMC-JCU-T2 S-80135ALMC-JAU-T2
100 ms typ. S-80135BNMC-JGU-T2 S-80135BLMC-JEU-T2
200 ms typ. S-80135CNMC-JKU-T2 S-80135CLMC-JIU-T2
3.6 V ±2.0% 50 ms typ. S-80136ANMC-JCV-T2 S-80136ALMC-JAV-T2
100 ms typ. S-80136BNMC-JGV-T2 S-80136BLMC-JEV-T2
200 ms typ. S-80136CNMC-JKV-T2 S-80136CLMC-JIV-T2
3.7 V ±2.0% 50 ms typ. S-80137ANMC-JCW-T2 S-80137ALMC-JAW-T2
100 ms typ. S-80137BNMC-JGW-T2 S-80137BLMC-JEW-T2
200 ms typ. S-80137CNMC-JKW-T2 S-80137CLMC-JIW-T2
3.8 V ±2.0% 50 ms typ. S-80138ANMC-JCX-T2 S-80138ALMC-JAX-T2
100 ms typ. S-80138BNMC-JGX-T2 S-80138BLMC-JEX-T2
200 ms typ. S-80138CNMC-JKX-T2 S-80138CLMC-JIX-T2
3.9 V ±2.0% 50 ms typ. S-80139ANMC-JCY-T2 S-80139ALMC-JAY-T2
100 ms typ. S-80139BNMC-JGY-T2 S-80139BLMC-JEY-T2
200 ms typ. S-80139CNMC-JKY-T2 S-80139CLMC-JIY-T2
4.0 V ±2.0% 50 ms typ. S-80140ANMC-JCZ-T2 S-80140ALMC-JAZ-T2
100 ms typ. S-80140BNMC-JGZ-T2 S-80140BLMC-JEZ-T2
200 ms typ. S-80140CNMC-JKZ-T2 S-80140CLMC-JIZ-T2
4.1 V ±2.0% 50 ms typ. S-80141ANMC-JC2-T2 S-80141ALMC-JA2-T2
100 ms typ. S-80141BNMC-JG2-T2 S-80141BLMC-JE2-T2
200 ms typ. S-80141CNMC-JK2-T2 S-80141CLMC-JI2-T2
4.2 V ±2.0% 50 ms typ. S-80142ANMC-JC3-T2 S-80142ALMC-JA3-T2
100 ms typ. S-80142BNMC-JG3-T2 S-80142BLMC-JE3-T2
200 ms typ. S-80142CNMC-JK3-T2 S-80142CLMC-JI3-T2
4.3 V ±2.0% 50 ms typ. S-80143ANMC-JC4-T2 S-80143ALMC-JA4-T2
100 ms typ. S-80143BNMC-JG4-T2 S-80143BLMC-JE4-T2
200 ms typ. S-80143CNMC-JK4-T2 S-80143CLMC-JI4-T2
4.4 V ±2.0% 50 ms typ. S-80144ANMC-JC5-T2 S-80144ALMC-JA5-T2
100 ms typ. S-80144BNMC-JG5-T2 S-80144BLMC-JE5-T2
200 ms typ. S-80144CNMC-JK5-T2 S-80144CLMC-JI5-T2
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
6 Seiko Instruments Inc.
Table 1 (3/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
4.5 V ±2.0% 50 ms typ. S-80145ANMC-JC6-T2 S-80145ALMC-JA6-T2
100 ms typ. S-80145BNMC-JG6-T2 S-80145BLMC-JE6-T2
200 ms typ. S-80145CNMC-JK6-T2 S-80145CLMC-JI6-T2
4.6 V ±2.0% 50 ms typ. S-80146ANMC-JC7-T2 S-80146ALMC-JA7-T2
100 ms typ. S-80146BNMC-JG7-T2 S-80146BLMC-JE7-T2
200 ms typ. S-80146CNMC-JK7-T2 S-80146CLMC-JI7-T2
4.7 V ±2.0% 50 ms typ. S-80147ANMC-JC8-T2 S-80147ALMC-JA8-T2
100 ms typ. S-80147BNMC-JG8-T2 S-80147BLMC-JE8-T2
200 ms typ. S-80147CNMC-JK8-T2 S-80147CLMC-JI8-T2
4.8 V ±2.0% 50 ms typ. S-80148ANMC-JC9-T2 S-80148ALMC-JA9-T2
100 ms typ. S-80148BNMC-JG9-T2 S-80148BLMC-JE9-T2
200 ms typ. S-80148CNMC-JK9-T2 S-80148CLMC-JI9-T2
4.9 V ±2.0% 50 ms typ. S-80149ANMC-JDA-T2 S-80149ALMC-JBA-T2
100 ms typ. S-80149BNMC-JHA-T2 S-80149BLMC-JFA-T2
200 ms typ. S-80149CNMC-JLA-T2 S-80149CLMC-JJA-T2
5.0 V ±2.0% 50 ms typ. S-80150ANMC-JDB-T2 S-80150ALMC-JBB-T2
100 ms typ. S-80150BNMC-JHB-T2 S-80150BLMC-JFB-T2
200 ms typ. S-80150CNMC-JLB-T2 S-80150CLMC-JJB-T2
5.1 V ±2.0% 50 ms typ. S-80151ANMC-JDC-T2 S-80151ALMC-JBC-T2
100 ms typ. S-80151BNMC-JHC-T2 S-80151BLMC-JFC-T2
200 ms typ. S-80151CNMC-JLC-T2 S-80151CLMC-JJC-T2
5.2 V ±2.0% 50 ms typ. S-80152ANMC-JDD-T2 S-80152ALMC-JBD-T2
100 ms typ. S-80152BNMC-JHD-T2 S-80152BLMC-JFD-T2
200 ms typ. S-80152CNMC-JLD-T2 S-80152CLMC-JJD-T2
5.3 V ±2.0% 50 ms typ. S-80153ANMC-JDE-T2 S-80153ALMC-JBE-T2
100 ms typ. S-80153BNMC-JHE-T2 S-80153BLMC-JFE-T2
200 ms typ. S-80153CNMC-JLE-T2 S-80153CLMC-JJE-T2
5.4 V ±2.0% 50 ms typ. S-80154ANMC-JDF-T2 S-80154ALMC-JBF-T2
100 ms typ. S-80154BNMC-JHF-T2 S-80154BLMC-JFF-T2
200 ms typ. S-80154CNMC-JLF-T2 S-80154CLMC-JJF-T2
5.5 V ±2.0% 50 ms typ. S-80155ANMC-JDG-T2 S-80155ALMC-JBG-T2
100 ms typ. S-80155BNMC-JHG-T2 S-80155BLMC-JFG-T2
200 ms typ. S-80155CNMC-JLG-T2 S-80155CLMC-JJG-T2
5.6 V ±2.0% 50 ms typ. S-80156ANMC-JDH-T2 S-80156ALMC-JBH-T2
100 ms typ. S-80156BNMC-JHH-T2 S-80156BLMC-JFH-T2
200 ms typ. S-80156CNMC-JLH-T2 S-80156CLMC-JJH-T2
5.7 V ±2.0% 50 ms typ. S-80157ANMC-JDI-T2 S-80157ALMC-JBI-T2
100 ms typ. S-80157BNMC-JHI-T2 S-80157BLMC-JFI-T2
200 ms typ. S-80157CNMC-JLI-T2 S-80157CLMC-JJI-T2
5.8 V ±2.0% 50 ms typ. S-80158ANMC-JDJ-T2 S-80158ALMC-JBJ-T2
100 ms typ. S-80158BNMC-JHJ-T2 S-80158BLMC-JFJ-T2
200 ms typ. S-80158CNMC-JLJ-T2 S-80158CLMC-JJJ-T2
5.9 V ±2.0% 50 ms typ. S-80159ANMC-JDK-T2 S-80159ALMC-JBK-T2
100 ms typ. S-80159BNMC-JHK-T2 S-80159BLMC-JFK-T2
200 ms typ. S-80159CNMC-JLK-T2 S-80159CLMC-JJK-T2
6.0 V ±2.0% 50 ms typ. S-80160ANMC-JDL-T2 S-80160ALMC-JBL-T2
100 ms typ. S-80160BNMC-JHL-T2 S-80160BLMC-JFL-T2
200 ms typ. S-80160CNMC-JLL-T2 S-80160CLMC-JJL-T2
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 7
2-2. SNT-4A
Table 2 (1/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
2.2 V ±2.0% 50 ms typ. S-80122ANPF-JCHTFG S-80122ALPF-JAHTFG
100 ms typ. S-80122BNPF-JGHTFG S-80122BLPF-JEHTFG
200 ms typ. S-80122CNPF-JKHTFG S-80122CLPF-JIHTFG
2.3 V ±2.0% 50 ms typ. S-80123ANPF-JCITFG S-80123ALPF-JAITFG
100 ms typ. S-80123BNPF-JGITFG S-80123BLPF-JEITFG
200 ms typ. S-80123CNPF-JKITFG S-80123CLPF-JIITFG
2.4 V ±2.0% 50 ms typ. S-80124ANPF-JCJTFG S-80124ALPF-JAJTFG
100 ms typ. S-80124BNPF-JGJTFG S-80124BLPF-JEJTFG
200 ms typ. S-80124CNPF-JKJTFG S-80124CLPF-JIJTFG
2.5 V ±2.0% 50 ms typ. S-80125ANPF-JCKTFG S-80125ALPF-JAKTFG
100 ms typ. S-80125BNPF-JGKTFG S-80125BLPF-JEKTFG
200 ms typ. S-80125CNPF-JKKTFG S-80125CLPF-JIKTFG
2.6 V ±2.0% 50 ms typ. S-80126ANPF-JCLTFG S-80126ALPF-JALTFG
100 ms typ. S-80126BNPF-JGLTFG S-80126BLPF-JELTFG
200 ms typ. S-80126CNPF-JKLTFG S-80126CLPF-JILTFG
2.7 V ±2.0% 50 ms typ. S-80127ANPF-JCMTFG S-80127ALPF-JAMTFG
100 ms typ. S-80127BNPF-JGMTFG S-80127BLPF-JEMTFG
200 ms typ. S-80127CNPF-JKMTFG S-80127CLPF-JIMTFG
2.8 V ±2.0% 50 ms typ. S-80128ANPF-JCNTFG S-80128ALPF-JANTFG
100 ms typ. S-80128BNPF-JGNTFG S-80128BLPF-JENTFG
200 ms typ. S-80128CNPF-JKNTFG S-80128CLPF-JINTFG
2.9 V ±2.0% 50 ms typ. S-80129ANPF-JCOTFG S-80129ALPF-JAOTFG
100 ms typ. S-80129BNPF-JGOTFG S-80129BLPF-JEOTFG
200 ms typ. S-80129CNPF-JKOTFG S-80129CLPF-JIOTFG
3.0 V ±2.0% 50 ms typ. S-80130ANPF-JCPTFG S-80130ALPF-JAPTFG
100 ms typ. S-80130BNPF-JGPTFG S-80130BLPF-JEPTFG
200 ms typ. S-80130CNPF-JKPTFG S-80130CLPF-JIPTFG
3.1 V ±2.0% 50 ms typ. S-80131ANPF-JCQTFG S-80131ALPF-JAQTFG
100 ms typ. S-80131BNPF-JGQTFG S-80131BLPF-JEQTFG
200 ms typ. S-80131CNPF-JKQTFG S-80131CLPF-JIQTFG
3.2 V ±2.0% 50 ms typ. S-80132ANPF-JCRTFG S-80132ALPF-JARTFG
100 ms typ. S-80132BNPF-JGRTFG S-80132BLPF-JERTFG
200 ms typ. S-80132CNPF-JKRTFG S-80132CLPF-JIRTFG
3.3 V ±2.0% 50 ms typ. S-80133ANPF-JCSTFG S-80133ALPF-JASTFG
100 ms typ. S-80133BNPF-JGSTFG S-80133BLPF-JESTFG
200 ms typ. S-80133CNPF-JKSTFG S-80133CLPF-JISTFG
3.4 V ±2.0% 50 ms typ. S-80134ANPF-JCTTFG S-80134ALPF-JATTFG
100 ms typ. S-80134BNPF-JGTTFG S-80134BLPF-JETTFG
200 ms typ. S-80134CNPF-JKTTFG S-80134CLPF-JITTFG
3.5 V ±2.0% 50 ms typ. S-80135ANPF-JCUTFG S-80135ALPF-JAUTFG
100 ms typ. S-80135BNPF-JGUTFG S-80135BLPF-JEUTFG
200 ms typ. S-80135CNPF-JKUTFG S-80135CLPF-JIUTFG
3.6 V ±2.0% 50 ms typ. S-80136ANPF-JCVTFG S-80136ALPF-JAVTFG
100 ms typ. S-80136BNPF-JGVTFG S-80136BLPF-JEVTFG
200 ms typ. S-80136CNPF-JKVTFG S-80136CLPF-JIVTFG
3.7 V ±2.0% 50 ms typ. S-80137ANPF-JCWTFG S-80137ALPF-JAWTFG
100 ms typ. S-80137BNPF-JGWTFG S-80137BLPF-JEWTFG
200 ms typ. S-80137CNPF-JKWTFG S-80137CLPF-JIWTFG
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
8 Seiko Instruments Inc.
Table 2 (2/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
3.8 V ±2.0% 50 ms typ. S-80138ANPF-JCXTFG S-80138ALPF-JAXTFG
100 ms typ. S-80138BNPF-JGXTFG S-80138BLPF-JEXTFG
200 ms typ. S-80138CNPF-JKXTFG S-80138CLPF-JIXTFG
3.9 V ±2.0% 50 ms typ. S-80139ANPF-JCYTFG S-80139ALPF-JAYTFG
100 ms typ. S-80139BNPF-JGYTFG S-80139BLPF-JEYTFG
200 ms typ. S-80139CNPF-JKYTFG S-80139CLPF-JIYTFG
4.0 V ±2.0% 50 ms typ. S-80140ANPF-JCZTFG S-80140ALPF-JAZTFG
100 ms typ. S-80140BNPF-JGZTFG S-80140BLPF-JEZTFG
200 ms typ. S-80140CNPF-JKZTFG S-80140CLPF-JIZTFG
4.1 V ±2.0% 50 ms typ. S-80141ANPF-JC2TFG S-80141ALPF-JA2TFG
100 ms typ. S-80141BNPF-JG2TFG S-80141BLPF-JE2TFG
200 ms typ. S-80141CNPF-JK2TFG S-80141CLPF-JI2TFG
4.2 V ±2.0% 50 ms typ. S-80142ANPF-JC3TFG S-80142ALPF-JA3TFG
100 ms typ. S-80142BNPF-JG3TFG S-80142BLPF-JE3TFG
200 ms typ. S-80142CNPF-JK3TFG S-80142CLPF-JI3TFG
4.3 V ±2.0% 50 ms typ. S-80143ANPF-JC4TFG S-80143ALPF-JA4TFG
100 ms typ. S-80143BNPF-JG4TFG S-80143BLPF-JE4TFG
200 ms typ. S-80143CNPF-JK4TFG S-80143CLPF-JI4TFG
4.4 V ±2.0% 50 ms typ. S-80144ANPF-JC5TFG S-80144ALPF-JA5TFG
100 ms typ. S-80144BNPF-JG5TFG S-80144BLPF-JE5TFG
200 ms typ. S-80144CNPF-JK5TFG S-80144CLPF-JI5TFG
4.5 V ±2.0% 50 ms typ. S-80145ANPF-JC6TFG S-80145ALPF-JA6TFG
100 ms typ. S-80145BNPF-JG6TFG S-80145BLPF-JE6TFG
200 ms typ. S-80145CNPF-JK6TFG S-80145CLPF-JI6TFG
4.6 V ±2.0% 50 ms typ. S-80146ANPF-JC7TFG S-80146ALPF-JA7TFG
100 ms typ. S-80146BNPF-JG7TFG S-80146BLPF-JE7TFG
200 ms typ. S-80146CNPF-JK7TFG S-80146CLPF-JI7TFG
4.7 V ±2.0% 50 ms typ. S-80147ANPF-JC8TFG S-80147ALPF-JA8TFG
100 ms typ. S-80147BNPF-JG8TFG S-80147BLPF-JE8TFG
200 ms typ. S-80147CNPF-JK8TFG S-80147CLPF-JI8TFG
4.8 V ±2.0% 50 ms typ. S-80148ANPF-JC9TFG S-80148ALPF-JA9TFG
100 ms typ. S-80148BNPF-JG9TFG S-80148BLPF-JE9TFG
200 ms typ. S-80148CNPF-JK9TFG S-80148CLPF-JI9TFG
4.9 V ±2.0% 50 ms typ. S-80149ANPF-JDATFG S-80149ALPF-JBATFG
100 ms typ. S-80149BNPF-JHATFG S-80149BLPF-JFATFG
200 ms typ. S-80149CNPF-JLATFG S-80149CLPF-JJATFG
5.0 V ±2.0% 50 ms typ. S-80150ANPF-JDBTFG S-80150ALPF-JBBTFG
100 ms typ. S-80150BNPF-JHBTFG S-80150BLPF-JFBTFG
200 ms typ. S-80150CNPF-JLBTFG S-80150CLPF-JJBTFG
5.1 V ±2.0% 50 ms typ. S-80151ANPF-JDCTFG S-80151ALPF-JBCTFG
100 ms typ. S-80151BNPF-JHCTFG S-80151BLPF-JFCTFG
200 ms typ. S-80151CNPF-JLCTFG S-80151CLPF-JJCTFG
5.2 V ±2.0% 50 ms typ. S-80152ANPF-JDDTFG S-80152ALPF-JBDTFG
100 ms typ. S-80152BNPF-JHDTFG S-80152BLPF-JFDTFG
200 ms typ. S-80152CNPF-JLDTFG S-80152CLPF-JJDTFG
5.3 V ±2.0% 50 ms typ. S-80153ANPF-JDETFG S-80153ALPF-JBETFG
100 ms typ. S-80153BNPF-JHETFG S-80153BLPF-JFETFG
200 ms typ. S-80153CNPF-JLETFG S-80153CLPF-JJETFG
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 9
Table 2 (3/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
5.4 V ±2.0% 50 ms typ. S-80154ANPF-JDFTFG S-80154ALPF-JBFTFG
100 ms typ. S-80154BNPF-JHFTFG S-80154BLPF-JFFTFG
200 ms typ. S-80154CNPF-JLFTFG S-80154CLPF-JJFTFG
5.5 V ±2.0% 50 ms typ. S-80155ANPF-JDGTFG S-80155ALPF-JBGTFG
100 ms typ. S-80155BNPF-JHGTFG S-80155BLPF-JFGTFG
200 ms typ. S-80155CNPF-JLGTFG S-80155CLPF-JJGTFG
5.6 V ±2.0% 50 ms typ. S-80156ANPF-JDHTFG S-80156ALPF-JBHTFG
100 ms typ. S-80156BNPF-JHHTFG S-80156BLPF-JFHTFG
200 ms typ. S-80156CNPF-JLHTFG S-80156CLPF-JJHTFG
5.7 V ±2.0% 50 ms typ. S-80157ANPF-JDITFG S-80157ALPF-JBITFG
100 ms typ. S-80157BNPF-JHITFG S-80157BLPF-JFITFG
200 ms typ. S-80157CNPF-JLITFG S-80157CLPF-JJITFG
5.8 V ±2.0% 50 ms typ. S-80158ANPF-JDJTFG S-80158ALPF-JBJTFG
100 ms typ. S-80158BNPF-JHJTFG S-80158BLPF-JFJTFG
200 ms typ. S-80158CNPF-JLJTFG S-80158CLPF-JJJTFG
5.9 V ±2.0% 50 ms typ. S-80159ANPF-JDKTFG S-80159ALPF-JBKTFG
100 ms typ. S-80159BNPF-JHKTFG S-80159BLPF-JFKTFG
200 ms typ. S-80159CNPF-JLKTFG S-80159CLPF-JJKTFG
6.0 V ±2.0% 50 ms typ. S-80160ANPF-JDLTFG S-80160ALPF-JBLTFG
100 ms typ. S-80160BNPF-JHLTFG S-80160BLPF-JFLTFG
200 ms typ. S-80160CNPF-JLLTFG S-80160CLPF-JJLTFG
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
10 Seiko Instruments Inc.
Pin Configurations
Table 3
Pin No. Pin name Pin description
1
DS*1 ON/OFF switch for delay time
2 VSS GND pin
3
NC*2 No connection
4 OUT Voltage detection output pin
5 VDD Voltage input pin
SOT-23-5
Top view
5 4
3
2
1
Figure 3
*1. Refer to “2. Delay Circuit” in “
Operation” for operation.
*2. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Table 4
Pin No. Pin name Pin description
1 VSS GND pin
2
DS*1 ON/OFF switch for delay time
3 VDD Voltage input pin
4 OUT Voltage detection output pin
SNT-4A
Top view
1 4
2 3
Figure 4
*1. Refer to “2. Delay Circuit” in “
Operation” for operation.
Absolute Maximum Ratings
Table 5
(Ta=25°C unless otherwise specified)
Item Symbol Absolute maximum ratings Unit
Power supply voltage VDD−VSS 12 V
Output voltage Nch open-drain output products VOUT VSS−0.3 to VSS+12
CMOS output products VSS−0.3 to VDD+0.3
Output current IOUT 50 mA
Power dissipation PD SOT-23-5 250 mW
SNT-4A 140
Operating ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 11
Electrical Characteristics
Table 6
(Ta=25 °C Unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage
*1
−
V
DET
—
−
V
DET(S)
×
0.98
−
V
DET(S)
−
V
DET(S)
×
1.02 V 1
Hysteresis width V
HYS
— 30 60 100 mV
I
SS
V
DD
=
3.5 V S-80122 to 26 — 1.3 3.3
µ
A
Current
consumption V
DD
=
4.5 V S-80127 to 39 — 1.5 3.5
V
DD
=
6.5 V S-80140 to 60 — 1.8 4.0
Operating voltage V
DD
— 0.95 — 10.0 V
Output current I
OUT
Output transistor,
Nch, V
OUT
=
0.5 V
V
DD
=
1.2 V
S-80122 to 60 0.75 1.5 — mA 2
V
DD
=
2.4 V
S-80127 to 60 3.0 6.0 —
V
DD
=
4.8 V
S-80122 to 39 1.0 2.0 —
Only for CMOS output products,
Output transistor,
Pch, V
DD
–V
OUT
=
0.5 V V
DD
=
6.0 V
S-80140 to 54 1.25 2.5 —
V
DD
=
8.4 V
S-80155 to 60 1.5 3.0 —
Leakage current I
LEAK
Only for Nch open-drain output products,
Output transistor,
Nch, V
DD
=
10.0 V, V
OUT
=
10.0 V
— — 0.1
µ
A
Detection voltage
temperature
coefficient
*2
DET
DET
VTa
V
−•∆
−∆
Ta
=−
40 °C to
+
85 °C —
±
120
±
360 ppm/
°C 1
Delay time 1 t
D1
V
DD
=−
V
DET
+
1 V, DS pin Low S-801xxAx 32.5 50 72.5 ms
S-801xxBx 65 100 145
S-801xxCx 130 200 290
Delay time 2 t
D2
V
DD
=−
V
DET
+1 V, DS pin High 110 220 330
µ
s 3
Input voltage V
SH
DS pin, V
DD
=
6.0 V 1.0 — — V 4
V
SL
DS pin, V
DD
=
6.0 V — — 0.3
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. Temperature change ratio for the detection voltage [mV/°C] is calculated using the following equation.
[]
()
[] []
1000Cppm/
VTa∆
V∆
V Typ.VCmV/
Ta∆
V∆
DET
DET
DET(S)
DET ÷°
−
−
×−=°
−
•
3*2**1
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage value
*3. Detection voltage temperature coefficient
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
12 Seiko Instruments Inc.
Test Circuits
1.
DS
VDD
OUT
VSS
R*1
100 kΩ
A
V
2.
DS
VDD
OUT
VSS
A
*1. R is unnecessary for CMOS output products.
Figure 5 Figure 6
3.
DS
VDD
OUT
VSS
R*1
100 kΩ
V
4.
DS
VDD
OUT
VSS
R*1
100 kΩ
A
V
*1. R is unnecessary for CMOS output products. *1. R is unnecessary for CMOS output products.
Figure 7 Figure 8
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 13
Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch
transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the
Nch transistor N1 in Figure 9 is OFF, the comparator input voltage is
CBA
DDCB
RRR
V)RR(
++
•+ .
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as VDD remains
above the detection voltage (–VDET). When the VDD falls below –VDET (point A in Figure 10), the
Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears at the
output. At this time the Nch transistor N1 in Figure 9 becomes ON, the comparator input
voltage is changed to
BA
DDB
RR
VR
+
•.
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or
goes to VDD when the output is pulled up to VDD.
1-4. The VSS level appears when VDD rises above the minimum operating voltage. The VSS level still
appears even when VDD surpasses the –VDET, as long as it does not exceed the release voltage
+VDET.
1-5. When VDD rises above +VDET (point B in Figure 10), the Nch transistor becomes OFF and the
Pch transistor becomes ON to provide VDD at the output. The VDD at the OUT pin is delayed for
tD due to the delay circuit.
*1
DS
*1
RC
RB
Pch
Nch
VREF
VDD
+
−
RA
N1
VSS
OUT
Delay circuit
*1. Paracitic diode
Figure 9 Operation 1
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
14 Seiko Instruments Inc.
A
B
V
DD
t
D
VSS
Minimum operating voltage
Output from OUT pin
V
DD
SS
(
1
)
(
2
)
(
3
)
(
5
)
(
4
)
Hysterisis width
(
VHYS
)
Release voltage (+VDET)
Detection voltage (−VDET)
Figure 10 Operation 2
2. Delay Circuit
2-1. Delay Time
The delay circuit delays the output signal from the time at which the power voltage (VDD)
exceeds the release voltage (+VDET) when VDD is turned on. The output signal is not delayed
when the VDD goes below the detection voltage (–VDET). (Refer to Figure 10.)
The delay time (tD) is a fixed value that is determined by a built-in oscillation circuit and counter.
2-2. DS Pin (ON/OFF Switch Pin for Delay Time)
The DS pin should be connected to Low or High. When the DS pin is High, the output delay
time becomes short since the output signal is taken from the middle of counter circuit (Refer to
Figure 15).
3. Other Characteristics
3-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 11 shows the temperature characteristics of the detection voltage.
–40 25
+0.792 mV/°C
2.200
85 Ta
[
°C
]
–
0.792 mV/°C
–VDET [V]
Figure 11 Temperature Characteristics of Detection Voltage (Example for S-80122xxxx)
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 15
3-2. Temperature Characteristics of Release Voltage
The temperature coefficient Ta
VDET
∆
+∆ of the release voltage is calculated by the temperature
coefficient Ta
VDET
∆
−∆ for the detection voltage as follows:
Ta
V
V
V
Ta
VDET
DET
DETDET
∆
−∆
×
−
+
=
∆
+∆
The temperature coefficients for the release voltage and the detection voltage have the same sign
consequently.
3-3. Temperature Characteristics of Hysteresis Voltage
The temperature characteristics for the hysteresis voltage is expressed as Ta
V
Ta
VDETDET
∆
−∆
−
∆
+∆ and
is calculated as follows:
Ta
V
V
V
Ta
V
Ta
VDET
DET
HYSDETDET
∆
−∆
×
−
=
∆
−∆
−
∆
+∆
Standard Circuit
DS
VDD
OUT
VSS
R
*
1
100 kΩ
*1. R is unnecessary for CMOS output products.
Figure 12
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through using the actual application to set the constant.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
16 Seiko Instruments Inc.
Technical Terms
1. Detection Voltage (–VDET), Release Voltage (+
++
+VDET)
The detection voltage (–VDET) is a voltage at which the output turns to low. The detection voltage varies
slightly among products of the same specification. The variation of detection voltage between the
specified minimum (–VDET) Min. and the maximum (–VDET) Max. is called the detection voltage range
(Refer to Figure 13).
e.g. For the S-80122AN, the detection voltage lies in the range of 2.156 ≤ (–VDET) ≤ 2.244.
This means that some S-80122ANs have 2.156 V for –VDET and some have 2.244 V.
The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies
slightly among products of the same specification. The variation of release voltages between the
specified minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range
(Refer to Figure 14).
e.g. For the S-80122AN, the release voltage lies in the range of 2.186 ≤ (+VDET) ≤ 2.344.
This means that some S-80122ANs have 2.186 V for +VDET and some have 2.344 V.
Detection voltage
Detection voltage
range
VDD
(−VDET) Min.
(−VDET) Max.
OUT
Delay time
Release voltage
Release voltage
range
VDD
(+VDET) Min.
(+VDET) Max.
OUT
Figure 13 Detection Voltage Figure 14 Release Voltage
Remark Although the detection voltage and release voltage overlap in the range of 2.186 V to 2.244 V,
+VDET is always larger than –VDET.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 17
2. Hysteresis Width (VHYS)
Hysteresis width is the voltage difference between the detection voltage and the release voltage (The
voltage at point B−The voltage at point A=VHYS in Figure 10). The existence of the hysteresis width
prevents malfunction caused by noise on input signal.
3. Delay Time (tD)
Delay time is a time internally measured from the instant at which input voltage to the VDD pin
exceeds the release voltage (+VDET) to the point at which the output of the OUT pin inverts. The delay
time is fixed in each series distinguished by A, B and C.
S-801xxAx series: typ. 50 ms
S-801xxBx series: typ. 100 ms
S-801xxCx series: typ. 200 ms
The output of the OUT pin can be inverted in a short delay time (tD2) by setting the DS pin High (Refer
to Figure 15).
tD2
tD1
VDD
at DS=”H” OUT
V
+VDET
Figure 15
4. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and
release of a voltage detector. The through-type current flows at a frequency of 20 kHz during release
delay time since the internal logic circuit operates.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
18 Seiko Instruments Inc.
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 16), taking a
CMOS active low products for example, the through-type current which is generated when the output
goes from low to high (release) causes a voltage drop equal to [through-type current] × [input
resistance] across the resistor. When the input voltage drops below the detection voltage (–VDET) as
a result, the output voltage goes to low level. In this state, the through-type current stops and its
resultant voltage drop disappears, and the output goes from low to high. The through-type current is
again generated, a voltage drop appears, and repeating the process finally induces oscillation.
OUT
VSS
VDD
RB
RA
VIN
S-801
Figure 16 Example for Bad Implementation of Input Voltage Divider
Precautions
• In the S-801 series products, the through-type current flows at a frequency of 20 kHz approximately during
the delay time since the internal oscillator circuit and counter timer operate at voltage release. High
impedance in the input may cause oscillation by the through-type current. When the input impedance is
high, insert a capacitor between VDD pin and VSS pin to prevent oscillation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In CMOS output products of the S-801 Series, the through-type current flows at detection and release. If
the impedance is high, oscillation may occur due to the voltage drop by the through-type current during
releasing.
• When designing for mass production using an application circuit described herein, the product deviation
and temperature characteristics should be taken into consideration. SII shall not bear any responsibility for
the patents on the circuits described herein.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of
the products including this IC upon patents owned a third party.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 19
Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
S-80122AL S-80160AL
2.1
2.2
2.3
2.4
−40 −20 0 20 40 60 80 100
Ta [°C]
VDET [V]
VDET (+)
VDET (−)
5.8
6.0
6.2
6.4
−40 −20 0 20 40 60 80 100
Ta [°C)]
VDET [V]
VDET (+)
VDET (−)
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
S-80122AL S-80160AL
30
40
50
60
70
80
90
100
−40 −20 0 20 40 60 80 100
Ta [°C]
VHYS [mV]
30
40
50
60
70
80
90
100
−40 −20 0 20 40 60 80 100
Ta [°C]
VHYS [mV]
3. Current Consumption (ISS) - Input Voltage (VDD)
(a) S-80122AL (b) S-80129AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
µ
A]
Ta=25°C
2.9 µA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
µ
A]
Ta=25°C
3.3 µA
(c) S-80130AL (d) S-80160AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
µ
A]
Ta=25°C
5.0 µA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
µ
A]
Ta=25°C
20 µA
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
20 Seiko Instruments Inc.
4. Current Consumption (ISS) - Temperature (Ta)
(a) S-80122AL (b) S-80129AL
0.0
1.0
2.0
3.0
4.0
5.0
−40 −20 0 20 40 60 80 100
Ta [°C]
ISS [
µ
A]
VDD=3.5 V
0.0
1.0
2.0
3.0
4.0
5.0
−40 −20 0 20 40 60 80 100
Ta [°C]
ISS [
µ
A]
VDD=4.5 V
(c) S-80130AL (d) S-80160AL
0.0
1.0
2.0
3.0
4.0
5.0
−40 −20 0 20 40 60 80 100
Ta [°C]
ISS [
µ
A]
VDD=4.5 V
0.0
1.0
2.0
3.0
4.0
5.0
−40 −20 0 20 40 60 80 100
Ta [°C]
ISS [
µ
A]
VDD=6.5 V
5. Nch Transistor Output Current (IOUT) -VOUT 6. Pch Transistor Output Current (IOUT) - (VDD-VOUT)
S-80160AL S-80122AL
0
10
20
30
40
50
60
70
0 2 4 6 8 10
VOUT [V]
IOUT [mA]
Ta=25°C
2 V
2.4 V
4 V
5.5 V
VDD=1 V, 1.2 V
0
10
20
30
40
0 2 4 6 8 10
VDD-VOUT [V]
IOUT [mA]
Ta=25°C
VDD=4 V
4.8 V
6 V
6.5 V
10 V
8 V
7. Nch Transistor Output Current (IOUT) - Input
Voltage (VDD)
8. Pch transistor Output Current (IOUT) - Input
Voltage (VDD)
S-80160AL S-80122AL
0
5
10
15
20
25
0 2 4 6 8 10
VDD [V]
IOUT [mA]
VDS=0.5 V
Ta= −40°C
85°C
25°C
0
1
2
3
4
5
0 2 4 6 8 10
VDD [V]
IOUT [mA]
VDS=0.5 V
Ta= −40°C
85°C
25°C
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 21
9. Minimum Operating Voltage - Input Voltage (VDD)
S-80122AN
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5
VDD [V]
VOUT [V]
Pull-up, VDD:100 kΩ
85°C
25°C
Ta= −40°C
10. Threshold Voltage of DS Pin - Temperature (Ta) 11. Threshold Voltage of DS Pin - Input Voltage (VDD)
S-80122AL S-80122AL
0
0.2
0.4
0.6
0.8
1
−40 −20 0 20 40 60 80 100
Ta [°C]
threshold [V]
VDD=6.0 V
0
0.2
0.4
0.6
0.8
1
0 2 4 6 8 10
VDD [V]
Threshold [V]
Ta= −40°C
25°C
85°C
12. Delay Time 1 - Temperature (Ta)
S-80122CL S-80160CL
0
50
100
150
200
250
300
−40 −20 0 20 40 60 80 100
Ta [°C]
Delay time [ms]
VDD=3.2 V
0
50
100
150
200
250
300
−40 −20 0 20 40 60 80 100
Ta [°C]
Delay time [ms]
VDD=7.0 V
13. Delay Time 1 - Input Voltage (VDD)
S-80122CL
0
50
100
150
200
250
300
2 4 6 8 10
VDD [V]
Delay time [ms]
Ta=25°C
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
22 Seiko Instruments Inc.
14. Delay Time 2 - Temperature (Ta)
S-80122AL S-80160AL
0
50
100
150
200
250
300
350
400
−40 −20 0 20 40 60 80 100
Ta [°C]
Delay time [µs]
VDD=3.2 V
0
50
100
150
200
250
300
350
400
−40 −20 0 20 40 60 80 100
Ta [°C]
Delay time [µs]
VDD=7.0 V
15. Delay Time 2 - Input Voltage (VDD)
S-80122AN
0
50
100
150
200
250
300
350
400
2 4 6 8 10
VDD [V]
Delay time [µs]
Ta=25°C
VDD
OUT
VSS
DS
*1
VDD
S-801
Series
V
V
R
*2
100 kΩ
VDD×90 %
VSS
VIH
VIL tD
VIH=10 V, VIL=0.95 V
INPUT VOLTAGE
OUTPUT VOLTAGE
*1. Set to VDD or VSS.
*2. R is not necessary for CMOS output products.
Figure 17 Measurment Condition for Delay Time Figure 18 Measurment Circuit for Delay Time
Caution The above connection diagram will not guarantees successful operation. Perform through using
the actual application to set the constant.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Rev.2.1_00 S-801 Series
Seiko Instruments Inc. 23
16. Response Time - Load Capacitor (COUT)
S-80122AL S-80122AN
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
COUT [
µ
F]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
COUT [
µ
F]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
S-80160AL S-80160AN
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
COUT [
µ
F]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
COUT [µF]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
VDD OUT
DS
VSS
VDD
S-801
Series
V
R
*1
100 kΩ
V
VDD × 90 %
VDD × 10 %
VIH
INPUT VOLTAGE
OUTPUT VOLTAGE
VIL
VDD
tPHL tPLH
VIH=10 V, VIL=0.95 V
1 µs
1 µs
*1. R is not necessary for CMOS output products.
Figure 19 Measurment Condition for Response Time Figure 20 Measurment Circuit for Response Time
Caution The above connection diagram will not guarantees successful operation. Perform through using
the actual application to set the constant.
ULTRA-SMALL PACKAGE BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
S-801 Series Rev.2.1_00
24 Seiko Instruments Inc.
Application Circuit Examples
Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified
operation may be performed or the contents of the memory register may be lost. When power supply
voltage returns to normal, the microcomputer needs to be initialized before normal operations can be
done. Reset circuits protect microcomputers in the event of current being momentarily switched off or
lowered.
Reset circuits shown in Figures 21 to 22 can be easily constructed with the help of the S-801 series
that has low operating voltage, a high-precision detection voltage, hysteresis, and a built-in delay
circuit.
VSS
VDD
Microcomputer
S-
801xxAL
VSS
(Nch open-drain output products only.)
VDD1 VDD2
Microcomputer
S-
801xxAN
Figure 21 Ret Circuit (S-801xxAL) Figure 22 Reset Circuit (S-801xxAN)
Caution The above connection diagram will not guarantees successful operation. Perform through
using the actual application to set the constant.
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-3.0
No. PF004-A-P-SD-3.0
+0.05
-0.02
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PF004-A-C-SD-1.0
SNT-4A-A-Carrier Tape
Feed direction
TF type
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
5°
No. PF004-A-C-SD-1.0
+0.1
-0
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-Reel
•
The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.