DMP2004K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) max Features * * * * * * * * * ID TA = +25C Package -430mA 0.9 @ VGS = -4.5V SOT23 -20V -150mA 2.0 @ VGS = -1.8V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications * * DC-DC Converters Power Management Functions Low On-Resistance Very Low Gate Threshold Voltage VGS(TH) <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) ESD Protected Gate Qualified to AEC-Q101 standards for High Reliability Mechanical Data * * * * * * * * Case: SOT23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate G Top View ESD PROTECTED Gate Protection Diode S Top View Internal Schematic Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP2004K-7 DMP2004KQ-7 Notes: Qualification Commercial Automotive Case SOT23 SOT23 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. PAB Date Code Key Year Code 2008 V DMP2004K Document number: DS30933 Rev. 7 - 2 2009 W YW Marking Information 2010 X PAB = Product Type Marking Code YW = Date Code Marking Y = Year (ex: W = 2009) W = Week (ex: A ~ Z = Weeks 1 ~ 26 a ~ y = Weeks 27 ~ 51 z = Weeks 52 and 53) 2011 Y 1 of 5 www.diodes.com 2012 Z 2013 A 2014 B 2015 C July 2012 (c) Diodes Incorporated DMP2004K Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -4.5V Pulsed Drain Current Symbol VDSS VGSS ID IDM Value -20 8 -600 -1.9 Units V V mA A Symbol PD RJA TJ, TSTG Value 550 227 -55 to +150 Units mW C/W C Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -- -- -- -- -- -- -1 1.0 V A A VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 4.5V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -- 0.7 1.1 1,7 -- -- -1.0 0.9 1.4 2.0 -- -1.2 V Static Drain-Source On-Resistance -0.5 -- -- -- 200 -0.5 mS V VDS = VGS, ID = -250A VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -0.2A VGS = 0V, IS = -115mA Ciss Coss Crss tD(on) tr tD(off) tf -- -- -- -- -- -- -- -- -- -- 8.5 4.3 20.2 19.2 175 30 20 -- -- -- -- pF pF pF ns ns ns ns Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Test Condition VDS = -16V, VGS = 0V f = 1.0MHz VDD = -3V, VGS = -2.5V, RL = 300, RG = 25, ID = -100mA 5. Device mounted on FR-4 PCB. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMP2004K Document number: DS30933 Rev. 7 - 2 2 of 5 www.diodes.com July 2012 (c) Diodes Incorporated -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) DMP2004K 0 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics -VGS(th), GATE THRESHOLD VOLTAGE (V) -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics TA, AMBIENT TEMPERATURE (C) Figure 3 Gate Threshold Voltage vs. Ambient Temperature -ID, DRAIN-SOURCE CURRENT (A) Figure 4 Static Drain-Source On-Resistance vs. Drain Current 10 -ID, DRAIN-SOURCE CURRENT (A) Figure 5 Static Drain-Source On-Resistance vs. Drain Current DMP2004K Document number: DS30933 Rev. 7 - 2 -ID, DRAIN-SOURCE CURRENT (A) Figure 6 Static Drain-Source On-Resistance vs. Drain-Source Current 3 of 5 www.diodes.com July 2012 (c) Diodes Incorporated DMP2004K -VDS, SOURCE-DRAIN VOLTAGE (V) Figure 8 Reverse Drain Current vs. Source-Drain Voltage TA, AMBIENT TEMPERATURE (C) Figure 7 Static Drain-Source On-State Resistance vs. Ambient Temperature 150 120 90 60 30 0 -ID, DRAIN CURRENT (A) Figure 9 Forward Transfer Admittance vs. Drain Current -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Capacitance Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F G DMP2004K Document number: DS30933 Rev. 7 - 2 L 4 of 5 www.diodes.com July 2012 (c) Diodes Incorporated DMP2004K Suggested Pad Layout Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E Y Z C X E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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