DMP2004K
Document number: DS30933 Rev. 7 - 2 1 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2004
K
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max Package
ID
TA = +25°C
-20V 0.9Ω @ VGS = -4.5V SOT23 -430mA
2.0Ω @ VGS = -1.8V -150mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power Management Functions
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage VGS(TH) <1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected Gate
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding
• Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
• Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMP2004K-7 Commercial SOT23 3,000/Tape & Reel
DMP2004KQ-7 Automotive SOT23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free .
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
e3
Top View
Internal Schematic
Top View Equivalent Circuit
ESD PROTECTED
Source
Gate
Protection
Diode
Gate
Drain
D
GS
SOT23
PAB = Product Type Marking Code
YW = Date Code Marking
Y = Year (ex: W = 2009)
W = Week (ex: A ~ Z = Weeks 1 ~ 26
a ~ y = Weeks 27 ~ 51
z = Weeks 52 and 53
)
PAB
YW
DMP2004K
Document number: DS30933 Rev. 7 - 2 2 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2004
K
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS ±8 V
Continuous Drain Current (Note 5) VGS = -4.5V ID -600 mA
Pulsed Drain Current IDM -1.9 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 550 mW
Thermal Resistance, Junction to Ambient (Note 5) RJA 227 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BVDSS -20 — — V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -20V, VGS = 0V
Gate-Source Leakage IGSS — — ±1.0 µA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage VGS
(
th
)
-0.5 — -1.0 V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance RDS (ON) — 0.7 0.9
VGS = -4.5V, ID = -430mA
— 1.1 1.4 VGS = -2.5V, ID = -300mA
— 1,7 2.0 VGS = -1.8V, ID = -150mA
Forward Transfer Admittance |Yfs| 200 — — mS
VDS = -10V, ID = -0.2A
Diode Forward Voltage (Note 6) VSD -0.5 — -1.2 V
VGS = 0V, IS = -115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance Ciss — — 175 pF
VDS = -16V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss — — 30 pF
Reverse Transfer Capacitance Crss — — 20 pF
Turn-On Delay Time tD
(
on
)
— 8.5 — ns
VDD = -3V, VGS = -2.5V,
RL = 300, RG = 25,
ID = -100mA
Turn-On Rise Time t
r
— 4.3 — ns
Turn-Off Delay Time tD
(
off
)
— 20.2 — ns
Turn-Off Fall Time tf — 19.2 — ns
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subje c t to produ ct testing.
DMP2004K
Document number: DS30933 Rev. 7 - 2 3 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2004
K
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
-V , GATE-SOURCE VOLTAGE (V)
Figure 2 Ty pical Transfer Characteristics
GS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
T , AMBIENT TEMPERATURE (°C)
Fig ur e 3 Ga t e Thresh old Volt age vs. Ambi ent Tem peratu re
A
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(th)
-I , DRAIN-SOURCE CURRENT (A)
Figure 4 St atic Drain-Source On-Resistance vs. Drain Current
D
-I , DRAIN-SOURCE CURRENT (A)
Figure 5 St atic Drain-Source On-Resistance
vs . Dr ain Curre nt
D
-I , DRAIN-SOURCE CURRENT (A)
Figure 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
D
10
DMP2004K
Document number: DS30933 Rev. 7 - 2 4 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2004
K
T , AMBIENT TEMPERA TURE (°C)
Figure 7 Static Drain-Source On-S tate Resistance
vs. Ambient Temper ature
A
-V , SOURCE-DRAIN VOLTAGE (V)
Fig ur e 8 Re ver se Drai n C ur r ent v s. Source- D ra in Volt age
DS
-I , DRAIN CURRENT (A)
Figure 9 Forward Transfer Admittance vs. Drain Current
D
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 T ypical Capacitance
DS
0
30
60
90
120
150
Package Outline Dimensions
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α0° 8° -
All Dimensions in mm
A
M
JL
D
F
BC
H
K
G
K1
DMP2004K
Document number: DS30933 Rev. 7 - 2 5 of 5
www.diodes.com July 2012
© Diodes Incorporated
DMP2004
K
Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
