To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. H5N6001P Silicon N Channel MOS FET High Speed Power Switching REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.3.00 Sep 07, 2005 Features * * * * Low on-resistance Low leakage current High speed switching Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.3.00 Sep 07, 2005 page 1 of 6 2 3 S H5N6001P Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Symbol VDSS Value 600 Unit V VGSS ID 30 20 V A 80 20 A A 80 6.5 A A 150 0.833 W C/W 150 -55 to +150 C C Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Body-drain diode reverse drain peak current Avalanche current IDR (pulse) Note 3 IAP Note 1 Note 2 Channel dissipation Channel to case thermal Impedance Pch ch-c Channel temperature Storage temperature Tch Tstg Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 600 Typ -- Max -- Unit V Test Conditions ID = 10 mA, VGS = 0 IDSS IGSS -- -- -- -- 1 0.1 A A VDS = 600 V, VGS = 0 VGS = 30 V, VDS = 0 Gate to source cutoff voltage Forward transfer admittance VGS (off) |yfs| 3.0 12 -- 20 4.0 -- V S VDS = 10 V, ID = 1 mA Note 4 ID = 10 A, VDS = 10 V Static drain to source on state resistance Input capacitance RDS (on) Ciss -- -- 0.30 4640 0.38 -- pF Output capacitance Reverse transfer capacitance Coss Crss -- -- 340 70 -- -- pF pF ID = 10 A, VGS = 10 V VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr -- -- 60 100 -- -- ns ns Turn-off delay time Fall time td (off) tf -- -- 220 90 -- -- ns ns Total gate charge Gate to source charge Qg Qgs -- -- 135 20 -- -- nC nC Gate to drain charge Body-drain diode forward voltage Qgd VDF -- -- 65 0.9 -- 1.4 nC V IF = 20 A, VGS = 0 trr Qrr -- -- 590 6.5 -- -- ns C IF = 20 A, VGS = 0 diF/dt = 100 A/s Zero gate voltage drain current Gate to source leak current Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Rev.3.00 Sep 07, 2005 page 2 of 6 VDD 300 V ID = 10 A VGS = 10 V RL = 30 Rg = 10 VDD = 480 V VGS = 10 V ID = 20 A Note 4 H5N6001P Main Characteristics Maximum Safe Operation Area 100 200 ID (A) 30 150 100 50 1m PW DC 10 10 s 10 0 =1 0m s( 1s ho er t) at ion (T c= 25 C ) s s Op 3 Drain Current Channel Dissipation Pch (W) Power vs. Temperature Derating 1 0.3 Operation in 0.1 this area is limited by RDS(on) 0.03 Ta = 25C 0.01 0 0 50 100 150 Case Temperature 1 200 Tc (C) 100 300 1000 VDS (V) 50 VDS = 10 V Pulse Test Pulse Test 40 8V 10 V 6V 40 ID (A) ID (A) 30 Typical Transfer Characteristics 50 30 20 5.5 V 10 Drain Current 30 20 5V VGS = 4.5 V 0 0 4 8 12 Drain to Source Voltage 16 Tc = 75C 10 0 20 0 Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 ID = 20 A 6 2 25C -25C 4 6 8 Gate to Source Voltage VDS (V) 10 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS(on) () Drain Current 10 Drain to Source Voltage Typical Output Characteristics Drain to Source Saturation Voltage VDS(on) (V) 3 2 Pulse Test 1 0.5 4 10 A 2 VGS = 10 V, 15 V 0.2 5A 0 0.1 0 4 8 12 Gate to Source Voltage Rev.3.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) 1 2 5 10 Drain Current 20 50 ID (A) 100 H5N6001P Forward Transfer Admittance vs. Drain Current 1 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = 10 V 0.8 ID = 20 A 0.6 5A 0.4 10 A 0.2 0 -25 0 25 50 75 100 125 Case Temperature 150 100 50 20 Tc = -25C 10 25C 5 2 75C 1 0.5 0.1 0.1 0.2 ID (A) Ciss 5000 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 50 100 10000 200 100 50 20 di / dt = 100 A / s VGS = 0, Ta = 25C 10 0.1 2000 1000 500 200 Coss 100 50 Crss VGS = 0 f = 1 MHz 20 10 0.3 1 3 10 Reverse Drain Current 30 100 0 50 VDS 12 8 400 200 4 VDD = 480 V 300 V 100 V 40 80 120 Gate Charge Rev.3.00 Sep 07, 2005 page 4 of 6 160 Qg (nC) 200 250 VDS (V) 0 200 10000 Switching Time t (ns) 600 VDD = 100 V 300 V 480 V 16 VGS (V) VGS Gate to Source Voltage ID = 20 A 800 150 Switching Characteristics 20 1000 100 Drain to Source Voltage IDR (A) Dynamic Input Characteristics VDS (V) 5 10 20 2 Typical Capacitance vs. Drain to Source Voltage 1000 Drain to Source Voltage 0.5 1 Drain Current Tc (C) Body-Drain Diode Reverse Recovery Time 0 0 VDS = 10 V Pulse Test 0.2 VGS = 10 V, VDD = 300 V PW = 5 s, duty 1 % RG = 10 1000 tr td(off) tf 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N6001P Reverse Drain Current IDR (A) 50 Pulse Test 40 30 VGS = 0 V 5 V, 10 V 20 10 0 0 0.4 0.8 1.2 1.6 Source to Drain Voltage Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current vs. Source to Drain Voltage 2.0 6 5 ID = 10 mA 4 3 1 mA 0.1 mA 2 1 VDS = 10 V 0 -50 VSD (V) 0 50 100 150 Case Temperature 200 Tc (C) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 Tc = 25C D=1 0.5 0.3 0.2 0.1 ch - c (t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C 0.1 0.05 PDM 0.03 0.02 1 0.0 0.01 10 1s h p ot uls D= PW T PW e T 100 1m 10 m Pulse Width 100 m 1 PW (S) Switching Time Test Circuit Vin Monitor 10 Waveform 90% Vout Monitor D.U.T. Vin 10% RL Vout 10 Vin 10 V VDD = 300 V 10% 90% td(on) Rev.3.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf H5N6001P Package Dimensions RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 15.6 0.3 Unit: mm 4.8 0.2 1.5 0.3 19.9 0.2 2.0 14.9 0.2 0.5 1.0 3.2 0.2 5.0 0.3 JEITA Package Code 1.6 2.0 1.4 Max 18.0 0.5 2.8 1.0 0.2 3.6 0.6 0.2 0.9 1.0 5.45 0.5 5.45 0.5 Ordering Information Part Name Quantity Shipping Container H5N6001P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. http://www.renesas.com RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0