Power Transistors 2SB1502 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 Unit: mm 3.30.2 5.00.3 3.0 Absolute Maximum Ratings (TC=25C) Parameter Symbol Ratings Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -5 V Peak collector current ICP -8 A Collector current IC -5 A dissipation Ta=25C 60 PC Junction temperature Tj Storage temperature Tstg W 3.5 1.5 2.00.3 2.70.3 3.00.3 1.00.2 0.60.2 5.450.3 10.90.5 1 Collector power TC=25C 2.0 1.5 Solder Dip 20.00.5 2.5 1.5 Optimum for 55W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < 2.5V 2.0 26.00.5 Features 10.0 4.0 6.0 3.0 20.00.5 2 3 1:Base 2:Collector 3:Emitter TOP-3L Package Internal Connection C 150 C -55 to +150 C B E Electrical Characteristics (TC=25C) Parameter Symbol Conditions min typ max Unit ICBO VCB = -120V, IE = 0 -100 A ICEO VCE = -100V, IB = 0 -100 A Emitter cutoff current IEBO VEB = -5V, IC = 0 -100 A Collector to emitter voltage VCEO IC = -30mA, IB = 0 -100 hFE1 VCE = -5V, IC = -1A 2000 hFE2* VCE = -5V, IC = -4A 5000 Collector cutoff current Forward current transfer ratio V 30000 Collector to emitter saturation voltage VCE(sat) IC = -4A, IB = -4mA -2.5 V Base to emitter saturation voltage VBE(sat) IC = -4A, IB = -4mA -3.0 V Transition frequency fT VCE = -10V, IC = - 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = -4A, IB1 = -4mA, IB2 = 4mA, VCC = -50V 20 MHz 1.0 s 0.8 s 1.0 s Rank classification Rank hFE2 Q S P 5000 to 15000 7000 to 21000 8000 to 30000 1 Power Transistors 2SB1502 PC -- Ta IC -- VCE TC=25C -5 (1) 50 40 30 20 - 0.4mA -4 - 0.3mA -3 - 0.2mA -2 - 0.1mA -1 (2) 10 IB=- 0.5mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (C) -2 -12 -30 -10 30000 25C TC=100C -25C 3000 1000 -3 TC=-25C -1 25C -1 -3 -10 -30 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -100 Collector current IC (A) -1 -3 -10 Collector current IC (A) ton, tstg, tf -- IC Area of safe operation (ASO) 100 -100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C 10 3 ton 1 tf tstg Non repetitive pulse TC=25C -30 Collector current IC (A) 30 0.3 -10 -3 ICP t=1ms IC 10ms -1 DC - 0.3 0.1 - 0.1 - 0.03 0.03 0.01 0 -2 -4 -1 -6 Collector current IC (A) -8 - 0.01 -1 TC=100C 25C -25C - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 Collector current IC (A) Cob -- VCB 10000 100C -3 1000 VCE=5V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) -10 -10 hFE -- IC IC/IB=1000 - 0.1 - 0.1 - 0.3 Switching time ton,tstg,tf (s) -8 100000 - 0.3 2 -6 -30 Collector to emitter voltage VCE (V) VBE(sat) -- IC -100 -4 IC/IB=1000 - 0.3 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) 60 -100 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) 70 VCE(sat) -- IC -6 Collector current IC (A) Collector power dissipation PC (W) 80 IE=0 f=1MHz TC=25C 300 100 30 10 3 1 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Power Transistors 2SB1502 Rth(t) -- t Thermal resistance Rth(t) (C/W) 1000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1) 10 (2) 1 0.1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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