IRF840
N - CHANNEL 500V - 0.75Ω- 8A - TO-220
PowerMESHMOSFET
■TYPICAL RDS(on) =0.75 Ω
■EXTREMELY HIGHdv/dt CAPABILITY
■100% AVALANCHE TESTED
■VERYLOW INTRINSICCAPACITANCES
■GATECHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’sconsolidated strip layout-based MESH
OVERLAYprocess. This technology matches
and improves the performances compared with
standardparts fromvarious sources.
APPLICATIONS
■HIGH CURRENT, HIGHSPEEDSWITCHING
■SWITH MODE POWER SUPPLIES (SMPS)
■DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
August 1998
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 500 V
V
DGR Drain- gate Voltage (RGS =20kΩ)500 V
VGS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C8.0A
I
D
Drain Current (continuous) at Tc=100o
C5.1A
I
DM(•) Drain Current (pulsed) 32 A
Ptot Total Dissipation at Tc=25o
C125W
Derating Factor 1.0 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulse width limitedby safe operating area (1)I
SD ≤8A,di/dt ≤100 A/µs, VDD ≤V(BR)DSS,Tj≤T
JMAX
First Digitof the Datecode Being Z or K IdentifiesSilicon Characterized in this Datasheet
TYPE VDSS RDS(on) ID
IRF840 500 V < 0.85 Ω8A
123
TO-220
1/8
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
1.0
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 8.0 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =50V) 520 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS =0 500 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRating T
c=125o
C1
50 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold
Voltage VDS =V
GS ID=250µA234V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D= 4.8 A 0.75 0.85 Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 8.0 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=4.8A 4.9 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 1300
200
18
pF
pF
pF
IRF840
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =250V I
D=4.3A
R
G=4.7 Ω VGS =10V
(see test circuit, figure 3)
19
11 ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V I
D=8.0A V
GS =10V 39
10.6
13.7
50 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =400V I
D=8A
R
G=4.7 Ω VGS =10V
(see test circuit, figure 5)
11.5
11
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
8.0
32 A
A
VSD (∗) Forward On Voltage ISD =8.0A V
GS =0 1.6 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 8.0 A di/dt = 100 A/µs
VDD =100V T
j=150o
C
(see test circuit, figure 5)
420
3.5
16.5
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Safe Operating Area Thermal Impedance
IRF840
3/8
OutputCharacteristics
Transconductance
GateCharge vs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
CapacitanceVariations
IRF840
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
IRF840
5/8
Fig. 1: Unclamped InductiveLoad Test Circuit
Fig. 3: Switching Times Test Circuits For
ResistiveLoad
Fig. 1: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
IRF840
6/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
IRF840
7/8
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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IRF840
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