
Si500S
2 Rev. 1.1
Supply Current
1.8 V option, 40 pF, 40 MHz, CMOS — 13.9 16 mA
1.8 V option, 10 pF, 200 MHz, CMOS — 16.7 19 mA
2.5 V option, 40 pF, 40 MHz, CMOS — 15.8 18 mA
2.5 V option, 10 pF, 200 MHz, CMOS — 19.3 22 mA
3.3 V option, 40 pF, 40 MHz, CMOS — 17.7 20 mA
3.3 V option, 10 pF, 200 MHz, CMOS — 21.5 24 mA
SSTL-3.3, 200 MHz — 18.1 20.2 mA
SSTL-2.5, 200 MHz — 18.0 19.7 mA
SSTL-1.8, 200 MHz — 16.8 18.7 mA
Output Stopped, CMOS — 11.8 13.1 mA
Tri-State — 9.7 10.7 mA
Powerdown — 1.0 1.9 mA
Output Symmetry 0.5 x VDD 46 – 13 ns/TCLK —54 +
13 ns/TCLK %
Rise and Fall Times3CMOS, CL= 15 pF measured from
20 to 80% of VDD —1.42.0ns
SSTL — — 0.6 ns
CMOS Output Voltage VOH, sourcing 9 mA VDD –0.5 — — V
VOL, sinking 9 mA — — 0.5 V
SSTL-1.8 Output Voltage4VOH VTT + 0.375 — — V
VOL ——V
TT – 0.375
SSTL-2.5 Output Voltage4VOH VTT + 0.48 — — V
VOL ——V
TT – 0.48
SSTL-3.3 Output Voltage5VOH VTT + 0.48 — — V
VOL ——V
TT – 0.48
Powerup Time From time VDD crosses min spec
supply ——2ms
OE Deassertion to Clk Stop — — 250 +
3xT
CLK ns
Return from Output Drive r
Stopped Mode ——
250 +
3xT
CLK ns
Return from Tri-State Time — — 12 + 3 x TCLK µs
Return from Powerdown Time — — 2 ms
Period Jitter (1-sigma) SSTL3—12
ps
RMS
Integrated Phase Jitter 1MHz–0.4xF
OUT, SSTL or CMOS
and CL < 7pF,
FOUT > 2.5 MHz —0.71.5
ps
RMS
Parameters Condition Min Typ Max Units
Notes:
1. Inclusive of 25 °C initial frequency accuracy, operating temperature range, supply voltage change, output load change,
first-year aging at 25 °C, shock, vibration, and one solder reflow.
2. Inclusive of 25 °C initial frequency accuracy, operating temperature range, supply voltage change, output load change,
ten-year aging at 85 °C, shock, vibration, and one solder reflow.
3. See “AN409: Ou tput Termination Options for the Si500S and Si500D Silicon Oscillators” for further details regarding
output clock termination recommendations.
4. VTT = .5 x VDD.
5. VTT = .45 x VDD.