August 2010
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C www.fairchildsemi.com
1
FDS86242 N-Channel PowerTrench® MOSFET
FDS86242
N-Channel PowerTrench® MOSFET
150 V, 4.1 A, 67 mΩ
Features
Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.1 A
Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.3 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
SO-8
D
D
D
D
S
SS
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 150 V
VGS Gate to Source Voltage ±20 V
IDDrain Current -Continuous 4.1 A
-Pulsed 20
EAS Single Pulse Avalanche Energy (Note 3) 40 mJ
PDPower Dissipation TC = 25 °C (Note 1) 5.0 W
Power Dissipation TA = 25 °C (Note 1a) 2.5
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDS86242 FDS86242 SO-8 13 ’’ 12 mm 2500 units
FDS86242 N-Channel PowerTrench® MOSFET
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©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
Electrical Characteristics TJ = 25°C unless otherwise noted
Off Characte ristics
On Characteristics
Dynamic Characteristics
Switching Charac teristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperatur
Coefficient ID = 250 μA, referenced to 25 °C 104 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA23.54V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -10 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 4.1 A 56.3 67 mΩVGS = 6 V, ID = 3.3 A 73.8 98
VGS = 10 V, ID = 4.1 A, TJ = 125 °C 107 126
gFS Forward Transconductance VDS = 10 V, ID = 4.1 A 11 S
Ciss Input Capacitance VDS = 75 V, VGS = 0 V,
f = 1MHz
570 760 pF
Coss Output Capacitance 64 85 pF
Crss Reverse Transfer Capacitance 2.9 5 pF
RgGate Resistance 0.5 Ω
td(on) Turn-On Delay Time VDD = 75 V, ID = 4.1 A,
VGS = 10 V, RGEN = 6 Ω
7.9 16 ns
trRise Time 1.5 10 ns
td(off) Turn-Off Delay Time 13 23 ns
tfFall Time 2.8 10 ns
Qg(TOT) Total Gate Charge VGS = 0 V to 10 V VDD = 75 V,
ID = 4.1 A
8.9 13 nC
Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 4.9 7 nC
Qgs Gate to Source Charge 3.0 nC
Qgd Gate to Drain “Miller” Charge 2.0 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 4.1 A (Note 2) 0.81 1.3 V
VGS = 0 V, IS = 2 A (Note 2) 0.77 1.2
trr Reverse Recovery Time IF = 4.1 A, di/dt = 100 A/μs 61 98 ns
Qrr Reverse Recovery Charge 71 114 nC
NOTES:
1. RθJA is determined with the de vice mounted on a 1 in 2 pad 2 o z copp er pad on a 1.5 x 1.5 in. boar d of FR-4 mater ial. RθJC is guaranteed by desi gn while RθCA is determ ined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 135 V, VGS = 10 V.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper. b) 125 °C/W when mounted on a
minimum pad.
FDS86242 N-Channel PowerTrench® MOSFET
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©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
012345
0
5
10
15
20
VGS = 7 V
VGS = 5.5 V
VGS = 10 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 5 V
VGS = 6 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics Figure 2.
0 5 10 15 20
0
1
2
3
4
5VGS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 6 V
VGS = 7 V
VGS = 5.5 V
VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On- Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ID = 4.1 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
vs Junction Te mperature Figure 4.
45678910
0
50
100
150
200
250
300
TJ = 125 oC
ID = 4.1 A
TJ = 25 oC
VGS, GATE TO SOURC E VOLTAGE (V)
rDS(on), DRAIN T O
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
234567
0
5
10
15
20
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
30
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDS86242 N-Channel PowerTrench® MOSFET
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©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
Figure 7.
0246810
0
2
4
6
8
10
ID = 4.1 A
VDD = 50 V
VDD = 100 V
VGS, GATE TO SOURC E VOL TAGE (V)
Qg, GATE CHARGE (nC)
VDD = 75 V
Gate Charge Characteristics Figure 8.
0.1 1 10 100
1
10
100
1000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10
1
10
20
30
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANC HE (ms)
IAS, AVALANCHE CURRENT (A)
Uncl a mped I nduc t ive
Switching Capability Figure 10.
25 50 75 100 125 150
0
1
2
3
4
5
VGS = 6 V
RθJA = 50 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, A m bient TE MPERATURE (oC)
Maximum Continuous Drain
Current vs Ambient Temperature
Figure 11.
0.01 0.1 1 10 100 800
0.001
0.01
0.1
1
10
100
10 s
100us
10 ms
DC
1 s
100 m s
1 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURC E VO LTA G E (V)
THIS ARE A IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
TA = 25 oC
Forward Bias Safe
Operating Area Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
RθJA = 12 5 oC/W
TA = 25 oC
P(PK), PEAK TRA NSIENT POWER ( W )
t, PULSE WIDTH (sec)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDS86242 N-Channel PowerTrench® MOSFET
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©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C
Figure 13. Junction-to-Ambient Transient Thermal Respon se Curve
10-4 10-3 10-2 10-1 110
100 1000
0.0005
0.001
0.01
0.1
1
2
SINGLE PULSE
RθJA = 125 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
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FDS86242 N-Channel PowerTrench® MOSFET
©2010 Fairchild Semiconductor Corporation
FDS86242 Rev. C 6
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Definition of Terms
AccuPower™
Auto-SPM™
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CTL™
Current Transfer Logic™
DEUXPEED®
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®
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QFET®
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RapidConfigure™
Saving our world, 1mW/W/kW at a time™
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SuperSOT™-3
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®*
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®
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TRUECURRENT™*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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tm
®
tm
tm
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Rev. I48
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