IRFR3410TRLPBF - INTERNATIONAL RECTIFIER

Symbol Parameter Max. Units

VDS Drain-Source Voltage 100 V

VGS Gate-to-Source Voltage ± 20

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A

IDM Pulsed Drain Current125

PD @TC = 25°C Maximum Power Dissipation 110 W

PD @TA = 25°C Maximum Power Dissipation 3.0

Linear Derating Factor 0.7 1 mW°C

dv/dt Peak Diode Recovery dv/dt 15 V/ns

TJOperating Junction and -55 to + 175 °C

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

www.irf.com 112/03/04

IRFR3410PbF

IRFU3410PbF

HEXFET® Power MOSFET

VDSS RDS(on) max ID

100V 39mΩ31A

Notes  through  are on page 10

D-Pak

IRFR3410 I-Pak

IRFU3410

PD - 95514A

lHigh frequency DC-DC converters

lLead-Free

Benefits

Applications

lLow Gate-to-Drain Charge to Reduce

Switching Losses

lFully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

lFully Characterized Avalanche Voltage

and Current

Parameter Typ. Max. Units

RθJC Junction-to-Case ––– 1.4

RθJA Junction-to-Ambient (PCB mount)* –– – 40 °C/W

RθJA Junction-to-Ambient ––– 110

Thermal Resistance

Absolute Maximum Ratings

IRFR/U3410PbF

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Parameter Min. Typ. Max. Units Conditions

gfs Forward Transconductance 33 ––– ––– S VDS = 25V, ID = 18A

QgTotal Gate Charge –– – 3 7 5 6 ID = 18A

Qgs Gate-to-Source Charge ––– 10 ––– nC VDS = 50V

Qgd Gate-to-Drain ("Miller") Charge ––– 11 ––– VGS = 10V, 

td(on) Turn-On Delay Time ––– 12 ––– VDD = 50V

trRise Time ––– 27 ––– ID = 18A

td(off) Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω

tfFall Time ––– 13 ––– VGS = 10V 

Ciss Input Capacitance ––– 1690 ––– VGS = 0V

Coss Output Capacitance ––– 220 ––– VDS = 25V

Crss Reverse Transfer Capacitance ––– 26 ––– pF ƒ = 1.0MHz

Coss Output Capacitance ––– 1640 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz

Coss Output Capacitance ––– 130 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz

Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 80V 

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter Typ. Max. Units

EAS Single Pulse Avalanche Energy––– 140 mJ

IAR Avalanche Current––– 18 A

Avalanche Characteristics

Parameter Min. Typ. Max. Units Conditions

ISContinuous Source Current MOSFET symbol

(Body Diode) ––– ––– showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– ––– p-n junction diode.

VSD Diode Forward Voltage ––– – –– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V 

trr Reverse Recovery Time ––– 84 ––– n s TJ = 25°C, IF = 18A

Qrr Reverse RecoveryCharge ––– 260 ––– nC di/dt = 100A/µs 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Diode Characteristics

31

125

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 100 – –– – –– V V GS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA 

RDS(on) Static Drain-to-Source On-Resistance ––– 34 39 m ΩVGS = 10V, ID = 18A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA

––– ––– 20 µA VDS = 100V, VGS = 0V

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage ––– ––– 2 00 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V

IGSS

IDSS Drain-to-Source Leakage Current

IRFR/U3410PbF

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Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.1 110 100

VDS, Drain- to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 25°C

0.1 110 100

VDS, Drain- to-Source Voltage (V)

100

ID, Drain-to-Source Current (A)

4.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

4.0 5.0 6.0 7.0 8.0 9.0

VGS, Gate-t o-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (Α)

TJ = 25°C

TJ = 175°C

VDS = 50V

20µs P ULSE WI DTH

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Junction Tem perature (°C)

0.0

1.0

2.0

3.0

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 30A

VGS = 10V

IRFR/U3410PbF

4www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

110 100

VDS, Drain-to-S ource Vol t age (V)

100

1000

10000

100000

C, Capacitance (pF)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = C

gs + C

gd, Cds SHORT ED

Cr ss = C

Coss = C

ds + C

0 102030405060

QG Total Gate Charge (nC)

VGS, Gate-to-Source Voltage (V)

VDS= 80V

VDS= 50V

VDS= 20V

ID= 18A

0.0 0.5 1.0 1.5 2.0

VSD, Source-toDrain Voltage (V)

0.1

1.0

10.0

100.0

1000.0

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100 1000

VDS , Drain-toSo urce Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

Tc = 25°C

Tj = 175°C

Single Puls e

1msec

10msec

OPE RATION IN THIS ARE A

LIMITE D BY RDS(on)

100µsec

IRFR/U3410PbF

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Fig 10a. Switching Time Test Circuit

GS t

d(on)

d(off)

Fig 10b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VGS

VDD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

TC , Case Tem perature (°C)

ID , Drain Current (A)

LI MITED BY PACKAGE

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

IRFR/U3410PbF

6www.irf.com

QGS QGD

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

VGS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

25 50 75 100 125 150 175

Starting TJ, Junction Tem perature (°C)

100

150

200

250

EAS, Single Pulse Avalanche Energy (mJ)

TOP 7.3A

13A

BOTTOM 18A

IRFR/U3410PbF

www.irf.com 7

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

e-Applied

oltage

Reverse

Recovery

Current Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D = P.W.

Period

Fig 14. For N-Channel HEXFET® Power MOSFETs

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit







VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



IRFR/U3410PbF

8www.irf.com

D-Pak (TO-252AA) Part Marking Information

D-Pak (TO-252AA) Package Outline

IN THE ASSE MBL Y LINE "A"

ASSEMBLED ON WW 16, 1999

EXAMPLE: WI TH ASSEMBL Y

THIS IS AN IRFR120

LOT CODE 1234 YEAR 9 = 199

DATE CODE

WEEK 1 6

PART NUMBER

LOGO

INTERNATIONAL

RECTIFIER

ASSEMBLY

LOT CODE

916A

IRFU120

YEAR 9 = 1999

DATE CODE

P = DE S IGNAT ES L EAD-FRE E

PROD UCT (OPTIONAL)

Note: "P" in assem bly line p o sitio n

indicates "Lead-Free"

12 34

WE EK 16

A = AS S EMBLY S IT E CODE

PART NUMBER

IRFU120

LINE A

LOGO

LOT CODE

ASSEMBLY

INTERNATIONAL

RECTIFIER

IRFR/U3410PbF

www.irf.com 9

I-Pak (TO-251AA) Package Outline

Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

AS S EMBLY

EXAMPLE: WITH ASSEMBLY

THIS IS AN IRF U120

YEAR 9 = 199

DATE CODE

LINE A

WEEK 19

I N THE ASSEMBLY LINE "A"

ASSEMBLED O N WW 19, 1999

LOT C ODE 5678

PART NUM BER

IRFU120

INTERNATIONAL

LOGO

RECTIFIER

LOT CODE

919A

Note: "P" in assem bly line

pos ition indicates " Lead-Free"

56 78

AS S EMBLY

LOT CODE

RECTIFIER

LOGO

INTERNATIONAL

IRFU120

PART NUMBE R

WEEK 19

DATE C ODE

YEAR 9 = 1999

A = ASSEMBLY S IT E CODE

P = DESIGNATES LEAD-FRE E

PRODUC T (OPTIONAL)

IRFR/U3410PbF

10 www.irf.com

 Repetitive rating; pulse width limited by

max. junction temperature.

ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Notes:

 Starting TJ = 25°C, L = 0.85mH

RG = 25Ω, IAS = 18A.

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Coss eff. is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS

 Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 30A.

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/04

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

16.3 ( .641 )

15.7 ( .619 )

8.1 ( .318 )

7.9 ( .312 )

12.1 ( .476 )

11.9 ( .469 ) FEED DIRECTION FEED DIRE CTION

16.3 ( .641

)

15.7 ( .619

)

TRR TRL

OTES :

. CONTROLLIN G DIMENSION : MILLIMETER.

. ALL D IMENS IONS ARE SHOWN IN MILLIMET ERS ( INC H ES ).

. OUTLINE CONFO RMS TO EIA-481 & EIA-541.

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

16 mm

13 INCH

Note: For the most current drawings please refer to the IR website at:

http://www.irf.com/package/