TB2922HQ
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
TB2922HQ
Dual Audio Power Amplifier
Weight: 4.04 g (typ.)
The TB2922HQ is 2ch BTL audio amplifier for TV or home audio
applications.
It includes and the pure complementary P-ch and N-ch DMOS
output stage.
The package is CPP (Compact Power Package).
It is built-in standby function, muting function various kinds of
protectors.
Features
High power output •
•
•
•
•
•
•
•
: P
OUT (1)= 22 W (typ)
(VCC = 18V, RL = 8 Ω, f = 1 kHz, THD = 10%)
: P
OUT (2)= 37W (typ)
(VCC = 16V, RL = 4 Ω, f = 1 kHz, THD = 10%)
: P
OUT (3)= 46W (typ)
(VCC = 26V, RL = 8 Ω, f = 1 kHz, THD = 10%)
: P
OUTMAX (1)= 72W (typ)
(VCC = 26V, RL = 8 Ω, f = 1 kHz, Ｍax Power)
Low distortion ratio : THD=0.02％ (typ)
Low noise : V
no = 0.16 μVrms (typ)
(VCC = 18V, RL = 8 Ω, Rg = 0 Ω, BW = 20 Hz~20 kHz)
Low outside parts
Built-in standby switch function (pin 1)
Built-in muting function (pin 6)
Built-in various protection circuits:
Thermal shut down, overvoltage, out to GND, out to VCC, out to out short speaker burned
Operating supply voltage
: VCC (opr) = 9 to 26 V (RL = 8 Ω)
: VCC (opr) = 9 to 18 V (RL = 4 Ω)
Note 1: Install the device correctly. Otherwise, the device or system may be degraded, damaged or even destroyed.
Note 2: The protection features are intended to avoid output short-circuits or other abnormal conditions temp orarily.
It is not guaranteed that they will prevent the IC from being damaged.
Exposure to conditions beyond the guaranteed operating ranges may not activate the protection features,
resulting in an IC damage due to output short-circuits.
Note 3: If HBM ESD(condition; 100pF/1.5kΩ) of under -1900V is applied to pin 2 or pin 4 in case that pin3 is GND,
this product may break down.
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TB2922HQ
Block Diagram
RL
4
8
9
12
11
2
7
RL
IN1
IN2
3
C1
C1
PRE-GND
5 6
OUT1 (+)
PW-GND
OUT1 (−)
OUT2 (+)
OUT2 (−)
VCC2
C3
C4
C2
: PRE-GND
: PW-GND
STBY RIP MUTE
C5
1
MUTE
PLAY
5 V
R1
10
R2
Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for
explanatory purpose.
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Caution and Application Method (Description is made only on the single channel)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) Pins. Therefore, the voltage gain can not be adjusted, but it makes
the device a space and total costs saver.
Amp. 1
Input
Amp. 2A
Amp. 2B
Figure 1 Block Diagram
The voltage gain of amp.1 : GV1 = 8dB
The voltage gain of amp.2A, B : GV2 = 20dB
The voltage gain of BTL connection : GV (BTL) = 6dB
Therefore, the total voltage gain is decided by expression below.
GV = GV1 + GV2 + GV (BTL) = 8 + 20 + 6 = 34dB
2. Standby SW Function (pin 1)
By means of controlling pin 1 (standby pin) to
High and Low, the power supply can be set to ON
and OFF. The threshold voltage of pin 1 is set at
about 3 VBE (typ.), and the power supply current is
about 2 μA (typ.) in the standby state.
Figure 2 With pin 1 set to High,
Power is turned ON
ON 1
OFF
10 kΩ
to BIAS
CUTTING CIRCUIT
≈ 2 VBE
VCC
Power
Control Voltage of Pin 4: VSB
Stand-by Power VSB (V)
ON OFF 0 to 0.5
OFF ON 2.5 to 6
When changing the time constant of pin 1, check the
pop noise.
Advantage of Standby SW
(1) Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
(2) Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching.
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VCC
Small current capacity switch
Battery
Stand-By VCC
From microcomputer Battery
Stand-By
– Standby Switch Method –
Figure 3
– Conventional Method –
VCC
Large current capacity switch
Battery
VCC From
microcomputer
Battery
Relay
3. Muting Function
(pin 6)
Audio muting function is enabled when pin 6 is Low. When the time constant of the muting function is
determined by R1 and C4, it should take into account the pop noise. The pop noise, which is generated when
the power or muting function is turned ON/OFF, will vary according to the time constant. (Refer to
Figure4)
The pin 6 is designed to operate off 5 V so that the outside pull-up resistor R1 is determined on the basic of
this value:
ex) When control voltage is changed in to 6 V from 5 V.
6 V/5 V × 47 k = 56 k
Additionally, as the VCC is rapidly falling, the IC internal low voltage muting operates to eliminate the
large pop noise basically.
The low voltage muting circuit pull 200 μA current into the IC so that the effect of the internal low
voltage muting does not become enough if the R1 is too small value.
To obtain enough operation of the internal low voltage muting, a series resistor, R1 at pin 6 should be
47 kΩ or more.
61 kΩ
R1
5 V
Mute ON/OFF
control
C4
Figure 4 Muting Function
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4. Pop Noise Suppression
The pop noise which is generated when the muting function is turned ON/OFF will vary according to the
time constant of C4.
The greater the capacitance, the lower the pop noise. Note that the time from when the mute control
signal is applied to C4 to when the muting function is turned ON/OFF will be longer.
5. External Component Constants
Effect
Component
Name Recommended
Value Purpose Lower than recommended
value Higher than recommended
value
C1 0.22 μF To eliminate DC Cut-off frequency is
increased Cut-off frequency is reduced
C2 10 μF To reduce ripple Powering ON/OFF is faster Powering ON/OFF takes
longer
C3 0.1 μF To provide
sufficient
oscillation margin Reduces noise and provides sufficient oscillation margin
C4 1 μF To reduce pop
noise High pop noise. Duration until
muting function is turned
ON/OFF is short
Low pop noise. Duration until
muting function is turned
ON/OFF is long
C5 3900 μF Ripple filter Power supply ripple filtering
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Absolute maximum ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
DC supply voltage VCC (DC) 28 V
Operation supply voltage VCC (opr) 26 V
Power dissipation PD (Note 4) 62.5 W
Operation temperature Topr −40 to 85 °C
Storage temperature Tstg −55 to 150 °C
Note 4: Package thermal resistance θj-T = 2°C/W (typ.) (Ta = 25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each absolute
maximum rating will never be exceeded in any operating conditions. Before using, creating and/or producing
designs, refer to and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified, VCC = 18 V, f = 1 kHz, RL = 8 Ω, Ta = 25°C)
Characteristics Symbol
Test
Circuit Test Condition Min Typ. Max Unit
Quiescent current ICCQ ⎯ V
IN = 0 ⎯ 80 150 mA
POUT (1) ⎯ THD = 10% 21 22 ⎯
POUT (2) ⎯ THD = 10%, RL=4Ω ⎯ 37 ⎯
POUT (3) ⎯ V
CC = 26 V, THD = 10% ⎯ 46 ⎯
Output power
POUT MAX (1) ⎯ V
CC = 26V, Max POWER ⎯ 72 ⎯
W
Total harmonic distortion THD ⎯ P
OUT = 4 W ⎯ 0.02 0.20 %
Voltage gain GV⎯ V
OUT = 0.775 Vrms 32 34 36 dB
Voltage gain ratio ΔGV⎯ V
OUT = 0.775 Vrms −1.0 0 1.0 dB
Output noise voltage VNO ⎯ Rg = 0 Ω, BW = 20 Hz~20 kHz ⎯ 180 250 μVrms
Ripple rejection ratio R.R. ⎯ frip = 100 Hz, Rg = 620 Ω
Vrip = 0.775 Vrms 40 50 ⎯ dB
Cross talk C.T. ⎯ Rg = 620 Ω
VOUT = 0.775 Vrms ⎯ 65 ⎯ dB
Output offset voltage VOFFSET ⎯ ⎯ −250 0 250 mV
Input resistance RIN ⎯ ⎯ ⎯ 30 ⎯ kΩ
Standby current ISB ⎯ Standby condition ⎯ 1 10 μA
VSB H ⎯ POWER: ON 2.5 ⎯ 6.0
Standby control voltage VSB L ⎯ POWER: OFF 0 ⎯ 0.5 V
VM H ⎯ MUTE: OFF 2.5 ⎯ 6.0
Mute control voltage VM L ⎯ MUTE: ON, R1 = 47 kΩ 0 ⎯ 0.5 V
Mute attenuation ATT M ⎯ MUTE: ON
VOUT = 10 Vrms→Mute: OFF 85 100 ⎯ dB
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Test Circuit
RL
4
8
9
12
11
2
7
RL
IN1
IN2
3
C1
C1
PRE-GND
5 6
OUT1 (+)
PW-GND
OUT1 (−)
OUT2 (+)
OUT2 (−)
VCC2
C3
C4
C2
: PRE-GND
: PW-GND
STBY RIP MUTE
C5
1
MUTE
PLAY
5 V
R1
10
0.22 μF
0.22 μF
10μF 1μF 47 kΩ
1000μF0.1μF
R21 kΩ
Components in the test circuits are only used to obtain and confirm the device characteristics.
These components and circuits do not warrant to prevent the application equipment from malfunction or failure.
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TB2922HQ
Output power POUT (W)
Total harmonic distortion THD (%)
Output power POUT (W)
Total harmonic distortion THD (%)
Output power POUT (W)
Total harmonic distortion THD (%)
Output power POUT (W)
Total harmonic distortion THD (%)
THD – POUT 4Ω (ch2)
20 kHz
10 kHz
1 kHz
0.1 100
0.001 0.3 1 30 0.5 10 3 5 50
0.01
0.1
0.003
0.005
0.03
0.05
1
0.3
0.5
10
30
100
50
3
5
f = 100 Hz
20 kHz
10 kHz
1 kHz
0.1 100
0.001 0.3 1 30 0.5 10 3 5 50
0.01
0.1
0.003
0.005
0.03
0.05
1
0.3
0.5
10
30
100
50
3
5
f = 100 Hz
20 kHz
10 kHz
1 kHz
0.1 100
0.001 0.3 1 30 0.5 10 3 5 50
0.01
0.1
0.003
0.005
0.03
0.05
1
0.3
0.5
10
30
100
50
3
5
f = 100 Hz
THD – POUT 8Ω (ch2)
THD – POUT 8Ω (ch1)
THD – POUT 4Ω (ch1)
10
30
100
50
3
5
VCC = 18 V
RL = 8 Ω
Filter
100 Hz : to 30 kHz
1kHz : 400 Hz to 30 kHz
10 kHz : 400 Hz to
20 kHz : 400 Hz to
Filter
100 Hz : to 30 kHz
1kHz : 400 Hz to 30 kHz
10 kHz : 400 Hz to
20 kHz : 400 Hz to
VCC = 18 V
RL = 4 Ω
Filter
100 Hz : to 30 kHz
1kHz : 400 Hz to 30 kHz
10 kHz : 400 Hz to
20 kHz : 400 Hz to
VCC = 18 V
RL = 4 Ω
Filter
100 Hz : to 30 kHz
1kHz : 400 Hz to 30 kHz
10 kHz : 400 Hz to
20 kHz : 400 Hz to
RL = 8 Ω
VCC = 18 V
20 kHz
1
0.5
10 kHz
0.3
H
z
to 30 kHz
to
to
0.1
1 kHz
0.05
0.03
f = 100 Hz
0.01
0.005
0.003
0.1 1000.3 1 30 0.5 310 5 50
0.001
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TB2922HQ
Output power POUT (W)
Total harmonic distortion THD (%)
5
3
0.5
0.3
1
0.05
0.03
0.005
0.003
0.1
0.01
1001 30 0.5 10 3 5 50
Output power POUT (W)
Total harmonic distortion THD (%)
26 V
VCC = 9 V
0.1
0.001 0.3
18 V
THD – POUT (ch1)
THD – POUT (ch2)
18 V
0.1
10
30
100
50
3
5
VCC = 9 V
26 V
10
30
100
50
RL = 8 Ω
f = 1 kHz
Filter
400 Hz to 30 kHz
RL = 8 Ω
f = 1 kHz
Filter
400 Hz to 30 kHz
0.5
0.3
1
0.05
0.03
0.003
0.005
0.1
0.01
0.001 1000.3 1 30 0.5 10 3 5 50
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frequency f (Hz)
2 ch
1 ch
Mute attenuation muteATT (dB)
frequency f (Hz)
Total harmonic distortion THD (%)
VCC = 18 V
RL = 8 Ω
POUT = 4 W
No filter
frequency f (Hz)
Ripple rejection ratio R.R. (dB)
frequency f (Hz)
Voltage gain GV (dB)
R.R. – f
G
V – f
VCC = 18 V
RL = 8 Ω
VOUT = 0.775 Vrms (0dBm)
0.1 0.01 100
0 1 10
10
20
30
40 1 ch~2 ch
VCC = 18 V
RL = 8 Ω
VOUT = 10 Vrms (22.5dBm)
−40
−20
0
100 10 100 k
−120 1 k 10 k
1 ch~2 ch
VCC = 13.2 V
RL = 4 Ω
Vrip = 0.775 Vrms (0dBm)
0.1
0.003
0.01
0.10.01 100
0.001 1 10
−40
−20
0
0.01 100
−80 1 10
−60
1 ch
2 ch
−100
−80
−60
muteATT – f 3
THD – f
1
0.3
0.1
0.03
TB2922HQ
Supply voltage VCC (V)
Quiescent Current ICCQ (mA)
Input voltage VIN (Vrms)
Output power POUT (W)
Input voltage VIN (Vrms)
Output power POUT (W)
PD MAX – Ta
0 5 10 15 20 25
ICCQ – VCC
8 2
V
IN – POUT (ch1)
V
IN – POUT (ch2)
30
40
0
0 2 4 6 8
10
20
00
0
RL = ∞
VIN = 0 V
20
40
60
80
0
20 kHz
10 kHz
1 kHz f = 100 Hz
10
20
30
40
4 6
1 kHz f = 100 Hz
10 kHz
20 kHz
VCC = 18 V
RVCC = 18 V
R
L = 8 Ω
No filter L = 8 Ω
No filter
0
25
20
15
30
30
1: Infinite heat sink
2: 4.1°C/W heat sink
3: 9.5°C/W heat sink
0 100 125 200150 7525 50 175
10
5
1
2
3
Ambient temperature Ta (°C)
Allowable power dissip ation PD MAX (W)
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TB2922HQ
Output power POUT (W)
Power dissipation PD (W)
Signal source resistance Rg (Ω)
Output noise voltage VNO (μVrms)
Cross talk C.T. (dB)
frequency f (Hz)
20
10
300
0 0 10 20 30 50
30
40 f = 1 kHz
RL = 8 Ω
2ch drive
VCC = 9.0 V
18 V
22 V
40
C.T. – f
V
NO – Rg
P
D – POUT
VCC = 18 V
RL = 8 Ω
VOUT = 0.775 Vrms (0dBm)
RG = 620 Ω
0
−60
−40
−20
−80
10
CT (1-2)
100 1 k 10 k 100 k
CT (2-1)
10 100 1 k 10 k 100 k
0
VCC = 18 V
RL = 8 Ω
Filter:
~20 kHz
0
100
200
1ch~2ch
26 V
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Package Dimensions
Weight: 4.04 g (typ.)
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• Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over
current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute
maximum ratings, when the wiring is routed i mproper ly or when an a bnorm al pulse n ois e occurs from th e wiring or
load, causing a large current t o continuously flow and the breakdown can lead smoke or i gnition. To mini mize the
effects of the flo w of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing tim e
and insertion circuit location, are required.
• If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to
prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or
the negative current resulting from the back electromotive force at power OFF. For details on how to connect a
protection circuit such as a current limiti ng resistor or b ack electromotive for ce ads orption diod e, refer to i ndividua l
IC datasheets or the IC databook. IC breakdown may cause injury, smoke or ignition.
• Use a stable power supply with ICs with built-in pr otection functions. If the power supply is unstable, the protectio n
function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition.
• Carefully select external components (such as inputs and negative feedback capacitors) and load components
(such as speakers), for example, power amp and regulator. If there is a large amount of leakage current such as
input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to
a speaker with low input withstand voltage, overcurrent or IC failure can cause smoke or ignition. (The over
current can cause smoke or ignition from th e IC itself.) In particular, please pay attention when using a Bridge Tied
Load (BTL) connection type IC that inputs output DC voltage to a speaker directly.
• Over current Protection Circuit
Over current protection circuits (referred to as current limiter circuits) do not necessarily protect ICs under all
circumstances. If the Over current protection circuits operate against the over current, cle ar the over curr e nt status
immediately. Depending on the method of use and usage conditions, such as exceeding absolute maximum
ratings can cause the over current protection circuit to not operate properly or IC breakdo wn before operation. In
addition, depending on the method of use and usage conditions, if over current continues to flow for a long time
after operation, the IC may generate heat resulting in breakd own.
• Thermal Shutdown Circuit
Thermal shutdown circuits do not necessarily protect ICs under a ll circum stances. If the Thermal shutdown circuits
operate against the over tem perature, clear the heat generation status immediatel y. Depending on the method of
use and usage conditions, such as exc eeding absolute maximum ratings can cause the thermal shutdown circuit
to not operate properly or IC breakdown before operation.
• Heat Radiation Design
When using an IC with large c urrent flow such as po wer amp, regul ator or driver, please d esign the device so that
heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition.
These ICs generate heat even during norm al use. An ina dequate IC heat radiati on design can lea d to decrease i n
IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into
considerate the effect of IC heat radiation with peripheral components.
• Installation to Heat Sink
Please install the power IC to the heat sink not to apply excessive mechanical stress to the IC. Excessive
mechanical stress can lead to package cracks, resulting in a reduction in reliability or breakdown of internal IC
chip. In addition, depending on the IC, the use of silicon rubber may be prohibited. Check whether the use of
silicon rubber is prohibited for the IC you intend to use, or not. For details of power IC heat radiation design and
heat sink installation, refer to individual technical datasheets or IC databooks.
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TB2922HQ
About solderability, following conditions were confirmed
• Solderability
(1) Use of Sn-63Pb solder Bath
· solder bath temperature = 230°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
(2) Use of Sn-3.0Ag-0.5Cu solder Bath
· solder bath temperature = 245°C
· dipping time = 5 seconds
· the number of times = once
· use of R-type flux
• The informatio n contai ned herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the qualit y and reliabilit y of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your desig ns, please ensure that TOSHIBA products ar e used within specified operating ra nges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipm ent, office equipment, measuri ng equipment, industrial r obotics, domestic applianc es,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products describe d in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit suppli es output ma y cause damage to the circuit or to the
product.
030619EBF
RESTRICTIONS ON PRODUCT USE
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