CDST116-G
RoHS Device
SMD Switching Diode
QW-B0029 Page 1
REV:A
Features
-Low leakage current applications.
-Medium speed switching times.
Polarity:
Marking: JV
Dimensions in inches and (millimeter)
Parameter Value Unit
Maximum Ratings (at Ta=25°C unless otherwise noted)
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Power dissipation
Junction temperature
Storage temperature
VRRM
VRWM
VR
IFM
PD
TJ
TSTG
t
75
215
250
150
-55 to +150
V
V
mA
mW
OC
OC
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.083(2.10)
0.066(1.70)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.006(0.15) max
0.007(0.20) min
Symbol
Parameter Conditions Min
Max
Unit
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
IR=100μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=0V, f=1MHz
IF=IR=10mA, Irr=0.1×IR,
RL=100Ω
V(BR)R
VF1
VF2
VF3
VF4
IR
CT
trr
75 V
0.9
1
1.1
1.25
5
3
V
V
V
V
V
μA
pF
nS
Typ.
V
2
Symbol
RATING AND CHARACTERISTIC CURVES (CDST116-G)
Page 2
QW-B0029
Fig.1 - Forward Current Derating Curve
0
IF, Forward Current (mA)
Ambient Temperature (°C)
0 100 200
Fig.2 Forward Voltage Characteristics -
0
IF, Forward Current (mA)
VF, Forward Voltage (V)
1 1.2
Fig.3 Reverse Characteristics -
0.001
IR, Reverse Current (nA)
TJ, Junction Temperature (°C)
0
0.01
200
200
300
0.4
300
Fig.4 Diode Capacitance Characteristics -
0
CT, Diode Capacitance (pF)
VR, Reverse Voltage (V)
0 5
1
2
10 20
150
100
100
1.6
0.1
SMD Switching Diode
REV:A
100
200
0.8
1
50
O
Tj=5C
10
O
Tj=2, axm umalue
5CMi vs
O
j, ypc v
T= 25 CTialalues
10
15
f=1MHz
O
TJ=25 C
100
