Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Low on-resistance BVDSS 20V
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▼ Capable of 2.5V gate drive RDS(ON) 28mΩ
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▼ Low drive current ID4.6A
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▼ Surface mount package
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 125 ℃/W
Data and specifications subject to change without notice 20071902
AP9926O
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage
Continuous Drain Current34.6
Continuous Drain Current33.7
Pulsed Drain Current120
Total Power Dissipation 1
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.008
Thermal Data Parameter
Storage Temperature Range
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
± 8
G2
D2
S2
G1
D1
S1
D2 S2 S2 G2
D1 S1 S1
G1
TSSOP-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.1 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=4A - 23 28 mΩ
VGS=2.5V, ID=2A - - 40 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - - V
gfs Forward Transconductance VDS=10V, ID=4.6A - 9.7 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=20V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=20V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=--
nA
QgTotal Gate Charge2ID=4.6A - 12.5 - nC
Qgs Gate-Source Charge VDS=20V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=5V - 6.5 - nC
td(on) Turn-on Delay Time2VDS=10V - 7 - ns
trRise Time ID=1A - 14.5 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 19 - ns
tfFall Time RD=10Ω-12-ns
Ciss Input Capacitance VGS=0V - 355 - pF
Coss Output Capacitance VDS=20V - 190 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 85 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V,VS=1.2V - - 0.83 A
VSD Forward On Voltage2Tj=25℃,IS=1.25A,VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
AP9926O
± 8V ±100
AP9926O
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
25
30
35
40
45
123456
VGS (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
TC=25oC
I
D= 4A
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=25oC
4.5V
4.0V
3.5V
3.0V
2.5V
VGS =2.0V
0
5
10
15
20
25
0 0.5 1 1.5 2 2.5 3
VDS , Drain-to-Source Voltage (V)
ID , Drain Curre nt (A)
TC=150 oC
4.5V
4.0V
3.5V
3.0V
2.5V
VGS =2.0V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normal ized RDS(ON)
VGS =4.5V
I
D= 4A
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
AP9926O
0.01
0.1
1
10
100
0.1 1 10 100
VDS (V)
ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
D
C
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Thermal Response (R thja)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208oC/W
t
T
0.02
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0 50 100 150
Tc , Case Temperature ( oC)
PD (W)
0
1
2
3
4
5
6
25 50 75 100 125 150
Tc , Case Temperature ( oC)
ID , Drain Curre nt (A)
AP9926O
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
2
4
6
8
10
12
0 5 10 15 20 25
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =10V
VDS =15V
VDS =20V
I
D=4.6A
10
100
1000
1 5 9 1317212529
VDS (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0 0.4 0.8 1.2 1.6
VSD (V)
IS (A)
Tj=25oC
Tj=150oC
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50 0 50 100 150
Junction Temperature ( oC )
VGS(th) (V)
AP9926O
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
td(on) trtd(off) tf
VDS
VGS
10%
90%
Q
VG
5V
QGS QGD
QG
Charge
0.5x RATED VDS
TO THE
OSCILLOSCOPE
-
+5 v
D
G
S
VDS
VGS
RG
RD
RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
ID
IG
1~ 3 m
A
