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DATA SH EET
Product data sheet
Supersedes data of 2003 Jul 28 2003 Dec 22
DISCRETE SEMICONDUCTORS
PBSS8110T
100 V, 1 A
NPN low VCEsat (BISS) transistor
db
ook, halfpage
M3D088
2003 Dec 22 2
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
FEATURES
•SOT23 package
•Low collector-emitter saturation voltage VCEsat
•High collector current capability: IC and ICM
•Higher efficiency leading to less heat generation
•Reduced printed-circuit board requirements.
APPLICATIONS
•Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
•Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
•Peripheral drivers
– Driver in low su pply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
DESCRIPTION
NPN low V CEsat trans i stor in a SOT23 plastic packa ge.
PNP complement: PBSS9110T.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER MARKING CODE(1)
PBSS8110T *U8
PINNING
PIN DESCRIPTION
1base
2emitter
3collector
handbook, halfpage
21
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23 ) and symbo l .
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
VCEO collector-emitter voltage 100 V
ICcollector current (DC) 1 A
ICM repetitive peak collector
current 3 A
RCEsat equivalent on-resistance 200 mΩ
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
PBSS8110T −plastic surface mounted package; 3 leads SOT23
2003 Dec 22 3
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
Notes
1. Device mounted on a pr inted-circuit board, single side d copper, tinplated, standard footprint.
2. Device mounted on a pr inted-circuit board, single side d copper, tinplated, mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −120 V
VCEO collector-emitter voltage open base −100 V
VEBO emitter-base voltage open collector −5 V
ICcollector current (DC) −1 A
ICM peak collector current limited by Tj max −3 A
IBbase current (DC) −300 mA
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW
Tamb ≤ 25 °C; note 2 −480 mW
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
handbook, halfpage
040 Tamb (°C)
Ptot
(mW)
80 160
500
0
400
120
300
200
100
MLE354
(1)
(2)
Fig.2 Power derating curves.
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
2003 Dec 22 4
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
THERMAL CHARACTE RISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth( j-a) thermal resistance from junction to
ambient in free air; note 1 417 K/W
in free air; note 2 260 K/W
mle356
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth
(K/W)
1
tp
tp
T
P
t
T
δ =
(1)
(7)
(8)
(9)
(10)
(2)
(3)
(4)
(5)
(6)
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
(1) δ = 1.0.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.03. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.0.
2003 Dec 22 5
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
mle355
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth
(K/W)
1
tp
tp
T
P
t
T
δ =
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
Fig.4 Transient thermal impedan ce as a function of pulse time for collector 1 cm2 copper mounting pad.
(1) δ = 1.0.
(2) δ = 0.75. (3) δ = 0.5.
(4) δ = 0.03. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05.
(8) δ = 0.02. (9) δ = 0.01.
(10) δ = 0.0.
2003 Dec 22 6
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector-base cut-off current VCB = 80 V; IE = 0 − − 100 nA
VCB = 80 V; IE = 0; Tj = 150 °C− − 50 μA
ICES collector-emitter cut-off current VCE = 80 V; VBE = 0 − − 100 nA
IEBO emitter-base cut-off current VEB = 4 V; IC = 0 − − 100 nA
hFE DC current gain VCE = 10 V; IC = 1 mA 150 − −
VCE = 10 V; IC = 250 mA 150 −500
VCE = 10 V; IC = 500 mA; note 1 100 − −
VCE = 10 V; IC = 1 A; note 1 80 − −
VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA − − 40 mV
IC = 500 mA; IB = 50 mA − − 120 mV
IC = 1 A; IB = 100 mA; note 1 − − 200 mV
RCEsat equivalent on-re sistance IC = 1 A; IB = 100 mA; note 1 −165 200 mΩ
VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.05 V
VBEon base-emitter turn-on voltage VCE = 10 V; IC = 1 A − − 0.9 V
fTtransition frequency IC = 50 mA; VCE = 10 V;
f = 100 MHz 100 − − MHz
Cccollector ca pacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 7.5 pF
2003 Dec 22 7
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
mle352
0
600
200
400
10−1110 IC (mA)
hFE
102103104
(1)
(3)
(2)
Fig.5 DC current gain as a fu nction of collector
current; ty pical values.
VCE = 10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage MLE362
0
1.2
0.4
0.8
10−1110 IC (mA)
VBE
(V)
102103104
(1)
(3)
(2)
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
VCE = 10 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
1
10−111010
2103104
10−2
10−1
MLE366
IC (mA)
VCEsat
(V)
(1)
(2)
(3)
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
1
10−111010
2103104
10−2
10−1
MLE353
IC (mA)
VCEsat
(V)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
Tamb = 25 °C.
2003 Dec 22 8
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
mle357
1
10−1
10
10−1110 IC (mA)
VCEsat
(V)
10−210−310−4
10−2
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 50.
Tamb = 25 °C.
handbook, halfpage
10
10
−1
11010
2
10
3
10
4
10
−1
1
MLE363
IC (mA)
VBEsat
(V)
(1)
(2)
(3)
Fig.10 Base- emitte r s atur ation v oltag e as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
10
10−111010
2103104
10−1
1
MLE364
IC (mA)
VBEsat
(V)
Fig.11 Base- emitte r s atur ation v oltag e as a
function of collector current; typical values.
IC/IB = 20.
Tamb = 25 °C.
handbook, halfpage
10−1
MLE365
1
10−1104
103
102
10 10 IC (mA)
VBEsat
(V)
Fig.12 Base- emitte r s atur ation v oltag e as a
function of collector current; typical values.
IC/IB = 50.
Tamb = 25 °C.
2003 Dec 22 9
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
05
2
0
0.4
0.8
1.2
1.6
1234
VCE (V)
IC
(A)
mle358
(1)
(2)
(3)
(4)
(9)
(5)
(10)
(7)
(8)
(6)
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) IB = 3500 μA.
(2) IB = 3150 μA.
(3) IB = 2800 μA.
(4) IB = 2450 μA.
(5) IB = 2100 μA.
(6) IB = 1750 μA.
(7) IB = 1400 μA.
(8) IB = 1050 μA.
(9) IB = 700 μA.
(10) IB = 350 μA.
Tamb = 25 °C.
handbook, halfpage
MLE359
103
102
1
10−1
10
10−11
RCEsat
(Ω)
IC (mA)
10 102103104
(3)
(1) (2)
Fig.14 Collector-emitter equivalent on- res istance
as a function of collector current; typical
values.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
handbook, halfpage
MLE360
103
102
1
10−1
10
10−11
RCEsat
(Ω)
IC (mA)
10 102103104
Fig.15 Collector-emitter equivalent on- res istance
as a function of collector current; typical
values.
IC/IB = 20.
Tamb = 25 °C.
handbook, halfpage
MLE361
103
102
1
10−1
10
10−11
RCEsat
(Ω)
IC (mA)
10 102103104
Fig.16 Collector-emitter equivalent on- res istance
as a function of collector current; typical
values.
IC/IB = 50.
Tamb = 25 °C.
2003 Dec 22 10
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
PACKAGE OUTLINE
UNIT A
1
max. b
p
cDE e
1
H
E
L
p
Qwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2003 Dec 22 11
NXP Semiconductors Pr oduct data sheet
100 V, 1 A
NPN low VCEsat (BISS) transistor PBSS8110T
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form part of an y quotation or cont ra ct, is believed to be accur ate a nd re li a ble and may be change d
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimer s. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Printed in The Netherlands R75/02/pp12 Date of release: 2003 Dec 22 Document orde r number: 9397 750 12008
