Document Number 3078
Issue 1
2N5784
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
SILICON EPITAXIAL
NPN TRANSISTOR
FEATURES
General purpose power transistor for
switching and linear applications in a
hermetic TO–39 package.
VCBO Collector – Base Voltage
VCER(sus) Collector – Emitter Sustaining Voltage RBE = 100Ω
VCEO(sus) Collector – Emitter Sustaining Voltage
VEBO Emitter – Base Voltage
ICContinuous Collector Current
IBContinuous Collector Current
PDTotal Device Dissipation TA= 25°C
Derate above 25°C
PDTotal Device Dissipation TC= 25°C
Derate above 25°C
TJ, TSTG Operating Junction and Storage Temperature Range
TLLead temperature, ≥1/32”(0.8mm) from seating plane for 10 s max.
80V
80V
65V
5V
3.5A
1A
10W
0.057W/°C
1W
0.0057W/°C
–65 to +200°C
230°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
Document Number 3078
Issue 1
2N5784
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter Test Conditions Min. Typ. Max. Unit
µA
mA
µA
mA
µA
µA
—
V
V
—
—
µs
°C/W
10
1
10
1
100
10
20 100
4
65
80 1.5
0.5
520
25
5
15
17.5
17.5
ICER Collector Cut-off Current
ICEX Collector Cut-off Current
ICEO Collector Cut-off Current
IEBO Emitter Cut-off Current
hFE* DC Current Gain
VCEO(sus)* Collector – Emitter Sustaining Voltage 1
VCER(sus)* Collector – Emitter Sustaining Voltage 1
VBE Base – Emitter Voltage
VCE(sat) Collector – Emitter Saturation Voltage 2
hfeSmall Signal Common – Emitter
Current Gain
hfe Small Signal Common – Emitter
Current Gain
tON Turn-on Time
tOFF Turn-off Time
RθJC Thermal Resistance Junction – Case
RθJA Thermal Resistance Junction – Ambient
VCE = 65V
RBE = 100ΩTC= 150°C
VCE = 75V VBE = -1.5V
RBE = 100ΩTC= 150°C
VCE = 50V IB= 0
VBE = -5V IC= 0
VCE = 2V IC= 1A
VCE = 2V IC= 3.2A
IC= 100mA IB= 0
IC= 100mA RBE = 100Ω
VCE = 2V IC= 1A
IC= 1A IB= 100mA
VCE = -2V IC= 100mA
f = 200kHz
VCE = 2V IC= 100mA
f = 1kHz
VCE = 30V IC= 1A
IB1 = IB2 = 100mA
NOTES
* Pulse Test: tp= 300µs, δ= 1.8%.
1) These tests
MUST NOT
be measured on a curve tracer.
2) Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test.
3) Measured at a frequency where hfeis decreasing at approximately 6dB per octave.
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise stated)
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