2N5784 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. FEATURES General purpose power transistor for switching and linear applications in a hermetic TO-39 package. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) TO-39 PACKAGE PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector - Base Voltage Collector - Emitter Sustaining Voltage RBE = 100 Collector - Emitter Sustaining Voltage Emitter - Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25C Derate above 25C Total Device Dissipation TC = 25C Derate above 25C Operating Junction and Storage Temperature Range Lead temperature, 1/32" (0.8mm) from seating plane for 10 s max. 80V 80V 65V 5V 3.5A 1A 10W 0.057W/C 1W 0.0057W/C -65 to +200C 230C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3078 Issue 1 2N5784 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter ICER Collector Cut-off Current ICEX Collector Cut-off Current ICEO Test Conditions VCE = 65V Min. Typ. Max. 10 Unit A RBE = 100 TC = 150C 1 mA VCE = 75V VBE = -1.5V 10 A RBE = 100 TC = 150C 1 mA Collector Cut-off Current VCE = 50V IB = 0 100 A IEBO Emitter Cut-off Current VBE = -5V IC = 0 10 A hFE* DC Current Gain VCE = 2V IC = 1A 20 VCE = 2V IC = 3.2A 4 IB = 0 65 IC = 100mA RBE = 100 80 VCE = 2V IC = 1A 1.5 IC = 1A IB = 100mA 0.5 IC = 100mA VCEO(sus)* Collector - Emitter Sustaining Voltage 1 IC = 100mA VCER(sus)* Collector - Emitter Sustaining Voltage VBE 1 Base - Emitter Voltage 2 100 V VCE(sat) Collector - Emitter Saturation Voltage hfe Small Signal Common - Emitter VCE = -2V Current Gain f = 200kHz Small Signal Common - Emitter VCE = 2V Current Gain f = 1kHz tON Turn-on Time VCE = 30V tOFF Turn-off Time RJC Thermal Resistance Junction - Case 17.5 RJA Thermal Resistance Junction - Ambient 17.5 hfe IC = 100mA IC = 1A IB1 = IB2 = 100mA 5 -- 20 V -- -- 25 5 15 s C/W NOTES * 1) Pulse Test: tp = 300s, = 1.8%. These tests MUST NOT be measured on a curve tracer. 2) 3) Measured 1/4" (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where hfe is decreasing at approximately 6dB per octave. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 3078 Issue 1 Search Results Part number search for devices beginning "2N5784-JQR" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/IC FT PD 2N5784-JQR-B NPN TO39 80V 3.5A 20 100 2/1 8MHz 10W Searched through 3084 records and found 1 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. file://///rohitnsharma/E/seme_lab/0516/2N5784-JQR-B.html [5/17/02 9:47:48 AM]